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1 Jun 1967

Volume 10, Issue 11, pp. 301-332


INTERFEROMETRIC INVESTIGATION OF THE WAVEFRONT OF LASER BEAMS

L. W. Davis

Appl. Phys. Lett. 10, 301 (1967); http://dx.doi.org/10.1063/1.1754820 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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A simple interferometric technique which uses a diverging spherical comparison wave for study of laser beams is described. The interference pattern resulting from superposition of the primary beam and a small portion of the expanded comparison wavefront provides information about both the phase and some spatial coherence properties of the primary radiation. Expected interference patterns have been obtained for a spatially coherent beam from a He☒Ne gas laser. The phase character and spatial coherence features of the beam from a Q‐switched ruby laser have been investigated.

SATURATED NEON ABSORPTION INSIDE A 6238‐Å LASER

Paul H. Lee and Michael L. Skolnick

Appl. Phys. Lett. 10, 303 (1967); http://dx.doi.org/10.1063/1.1754821 (3 pages) | Cited 73 times

Online Publication Date: 30 November 2004

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Excited 20Ne at 0.1 torr was placed inside the cavity of a single‐frequency, 6328‐Å laser. A pronounced peak appeared in the output power, caused by an inverted Lamb dip effect. Because of the low pressure used, this peak was only 30 ± 5 MHz wide and must be very near the atomic resonant frequency. In contrast, the overall output curve was blue‐shifted 60 ± 10 MHz by the 3 torr nominal pressure in the laser gain tube. This saturated absorption effect can be used as an absolute reference for the frequency stabilization of He☒Ne and similar lasers.

EFFECT OF OXYGEN ADSORPTION ON THE PHOTOELECTRON YIELD FROM TUNGSTEN IN THE VACUUM ULTRAVIOLET

B. J. Waclawski, L. R. Hughey, and R. P. Madden

Appl. Phys. Lett. 10, 305 (1967); http://dx.doi.org/10.1063/1.1754822 (3 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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The effect of adsorbed oxygen on the photoelectron yield of bulk polycrystalline tungsten was studied at photon energies of 7.7, 10.2, 11.8, 16.9, and 21.2 eV. Use of ultrahigh vacua ∼3 × 10−10 torr ensured sample cleanliness prior to oxygen exposure. The photoelectron yield decreases with oxygen exposure because of the increase in the electronic work function of the tungsten photocathode. However, at hv = 21.2 eV, an increase in photoelectron yield with oxygen exposure also appears and is believed to be due to photoelectron emission from the adsorbed oxygen atoms.

NOISE IN DOUBLE‐INJECTION SPACE‐CHARGE‐LIMITED DIODES

S. T. Liu, S. Yamamoto, and A. van der Ziel

Appl. Phys. Lett. 10, 308 (1967); http://dx.doi.org/10.1063/1.1754823 (2 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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It is shown that the h.f. conductance g of a double‐injection Ge diode shows transit time effects and that the limiting noise can be represented by a current generator (4kTgΔf)1∕2 in parallel to the device. In contrast, the single‐injection diode seems to be best represented by a current generator (8kTgΔf)1∕2.

DIRECT MEASUREMENT OF GAIN IN A LITHIUM NIOBATE PARAMETRIC AMPLIFIER

M. J. Colles and R. C. Smith

Appl. Phys. Lett. 10, 309 (1967); http://dx.doi.org/10.1063/1.1754824 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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Signal gain has been measured directly in a LiNbO3 near‐infrared parametric amplifier. A maximum gain of 30% was achieved at a signal wavelength of 1.152 μ using 50 kW of pump power at 0.53 μ. Theoretical and experimental gain coefficients are given and compared with the results of recent parametric oscillator experiments by other workers.

ELASTIC SURFACE WAVES IN α‐QUARTZ: OBSERVATION OF LEAKY SURFACE WAVES

H. Engan, K. A. Ingebrigtsen, and A. Tonning

Appl. Phys. Lett. 10, 311 (1967); http://dx.doi.org/10.1063/1.1754825 (3 pages) | Cited 17 times

Online Publication Date: 30 November 2004

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Results are given of measuring the phase velocity of elastic surface waves in the three principal planes of α‐quartz. The observation of a leaky surface wave is reported.

DOUBLE INJECTION IN EVAPORATED SILICON FILMS

M. Braunstein, A. I. Braunstein, and R. Zuleeg

Appl. Phys. Lett. 10, 313 (1967); http://dx.doi.org/10.1063/1.1754826 (3 pages)

Online Publication Date: 30 November 2004

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We have observed negative resistance behavior in evaporated silicon films at room temperature and at liquid nitrogen temperatures which we believe is due to double injection. This, to our knowledge, is the first reporting of double injection in silicon thin films, as well as the first reporting of an active device prepared from silicon thin films. Sample lengths in previous work have ranged from one hundred to several thousand microns. The films used in our work are 0.4 to 0.6 μ thick.

PHOTOCONDUCTIVITY AND IMPACT IONIZATION IN CdS

Richard S. Crandall

Appl. Phys. Lett. 10, 316 (1967); http://dx.doi.org/10.1063/1.1754827 (2 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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Photocurrent measurements on single‐crystal semi‐insulating CdS at 4.2°K show that the photocurrent does not undergo multiplication by impact ionization even though the dark current does.

EMPIRICAL RELATIONSHIP BETWEEN SHEAR STRENGTH, PRESSURE AND TEMPERATURE

Laird C. Towle

Appl. Phys. Lett. 10, 317 (1967); http://dx.doi.org/10.1063/1.1754828 (4 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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An empirical formula has been found connecting the pressure and temperature dependence of the shear strength of crystalline solids. It contains only two adjustable parameters and has been found to be valid for a variety of materials. The formula should prove useful for calculating the shear strength of materials under pressure and∕or temperature conditions where direct measurements are inconvenient or impossible.

SCANNING ELECTRON MICROSCOPY OF FERROELECTRIC DOMAINS IN BARIUM TITANATE

G. Y. Robinson and R. M. White

Appl. Phys. Lett. 10, 320 (1967); http://dx.doi.org/10.1063/1.1754829 (4 pages) | Cited 24 times

Online Publication Date: 30 November 2004

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Ferroelectric domains in single‐crystal tetragonal barium titanate have been observed in the scanning electron microscope. Contrast in the image results primarily from the surface topography associated with domains; thus it is possible to observe surface structure associated with 90° domains under high magnification. In the scanning microscope one can observe the disappearance of domain structure above the Curie temperature, as well as domain growth and movement produced by intense electron bombardment. Scanning electron micrographs of as‐grown BaTiO2 have revealed surface structure which may correspond to the permanent surface layer which exists on BaTiO3.

ANALYSIS OF Sb‐IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS

L. Eriksson, J. A. Davies, J. Denhartog, J. W. Mayer, O. J. Marsh, and R. Markarious

Appl. Phys. Lett. 10, 323 (1967); http://dx.doi.org/10.1063/1.1754830 (3 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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The annealing behavior of Si crystals, implanted with ∼1015 Sb ions∕cm2 at 40 keV, has been studied by observing the orientation dependence of the scattering yield of 1.0‐MeV protons and also by electrical measurements. The scattering measurements provide information on the sites of the implanted atoms and on the extent of lattice disorder. After a room temperature implant, the lattice is heavily damaged, with the Sb occupying random (or interstitial) positions. After annealing at 650°C, ∼75% of the Sb is substitutional with very little damage remaining. Comparable results are obtained in a 400°C implant.

LOCALIZED VIBRATIONAL MODES IN SILICON: B‐P PAIR BANDS

V. Tsvetov, W. Allred, and W. G. Spitzer

Appl. Phys. Lett. 10, 326 (1967); http://dx.doi.org/10.1063/1.1754831 (4 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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Two infrared absorption bands attributed to substitutional boron‐phosphorus pairs in silicon are observed. The bands are close to the single, isolated boron band and all show approximately the same frequency shift with change in boron isotope. The pair bands occur near 599.7 and 629 cm−1 for 11B and 622.9 and ∼655 cm−1 for 10B. The results are compared with the theory of Elliott and Pfeuty. The number of pair bands, their isotope shift, and their proximity to the isolated B band are in agreement with theory. The Δν ∼ 30 cm−1 is an order of magnitude larger than predicted by the isotopic model indicating changes in force constants.

PRESSURE SENSITIVITY OF GOLD‐POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES

V. L. Rideout and C. R. Crowell

Appl. Phys. Lett. 10, 329 (1967); http://dx.doi.org/10.1063/1.1754832 (4 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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The effect of localized uniaxial force (exerted by a hemispherical stylus) on the voltage‐current relationship of Au‐KTaO3 Schottky barrier diodes is described. Pronounced reversible changes were observed and characterized by stress‐induced decreases of up to 0.8 eV in the metal‐semiconductor barrier height. The observed diode n values [n ≡ (q∕kT)(dV∕d ln J)] at 300°K ranged from 1.05 to 1.10. This indicates that thermionic field emission may be the dominant current flow mechanism. An analysis of the pressure profile produced by the stylus yields 4 × 10−11 V‐cm2∕dyn for the pressure sensitivity of the barrier height.
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Erratum: Molecular Laser Action in Hydrogen and Deuterium Halides

Thomas F. Deutsch

Appl. Phys. Lett. 10, 332 (1967); http://dx.doi.org/10.1063/1.1754833 (1 page)

Online Publication Date: 30 November 2004

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