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15 Jan 1967

Volume 10, Issue 2, pp. 35-65


LOW SPATIAL FREQUENCY HOLOGRAMS OF SOLID OBJECTS

Richard Vandewarker and Kenneth Snow

Appl. Phys. Lett. 10, 35 (1967); http://dx.doi.org/10.1063/1.1754834 (2 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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A method is described whereby low spatial frequency holograms that reconstruct well in white light may be produced and easily copied on inexpensive Diazo materials.

HIGH FIELD DOMAINS IN n‐TYPE CADMIUM SULPHIDE

William H. Haydl

Appl. Phys. Lett. 10, 36 (1967); http://dx.doi.org/10.1063/1.1754835 (3 pages) | Cited 13 times

Online Publication Date: 30 November 2004

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Experimental results on the high electric‐field‐domain formation in semiconducting n‐type CdS are presented. We conclude from the experiment that certain shear‐wave components of the thermal acoustic noise are amplified and cause a domain to form. The results presented seem to be the first which clearly distinguish between acoustic noise and shock‐excited noise.

STIMULATION OF THERMOLUMINESCENCE IN LiF BY RUBY LASER LIGHT

V. D. Fréchette and Carl Cline

Appl. Phys. Lett. 10, 39 (1967); http://dx.doi.org/10.1063/1.1754836 (2 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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Single crystals of LiF, fractured internally at liquid nitrogen temperature by a focused 30‐nsec pulse from a ruby laser, showed thermoluminescence peaks at 100° and 140°K. Reddish coloration at the damage centers annealed out at 550°C. Analog of the glow peaks with those reported for LiF subjected to x rays and gamma rays and attributed to release of self‐trapped electrons with subsequent transitions and recombinations, suggests that the ruby laser pulse can ionize electrons in LiF, possibly by multiple photon processes or through the medium of defect species.

MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GALLIUM ARSENIDE

J. G. Ruch and G. S. Kino

Appl. Phys. Lett. 10, 40 (1967); http://dx.doi.org/10.1063/1.1754837 (3 pages) | Cited 63 times

Online Publication Date: 30 November 2004

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The electron velocity‐field characteristic of insulating GaAs has been measured by injecting electrons with an electron beam. The measured low field mobility is 7500 cm2∕V‐sec with an initial negative differential mobility of −2400 cm2∕V‐sec at a threshold field of 3.2 kV∕cm.

A p‐n JUNCTION IN SILICON WHISKERS GROWN BY VLS METHODS

E. Komatsu, Y. Higuchi, and T. Niina

Appl. Phys. Lett. 10, 42 (1967); http://dx.doi.org/10.1063/1.1754838 (2 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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The preparation of a p‐n junction in a Si whisker grown by VLS methods from gold‐silicon alloys is described. The junction formed was identified by etching and by scanning electron microscopy. Characteristics of the junction were a backward breakdown voltage of about 19 V and a forward breakdown voltage of about 0.5 V.

STIMULATED ELECTRONIC RAMAN SCATTERING

P. P. Sorokin, N. S. Shiren, J. R. Lankard, E. C. Hammond, and T. G. Kazyaka

Appl. Phys. Lett. 10, 44 (1967); http://dx.doi.org/10.1063/1.1754839 (3 pages) | Cited 30 times

Online Publication Date: 30 November 2004

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Stimulated electronic Raman scattering in potassium vapor is observed. The primary source was a nitrobenzene Raman‐shifted ruby laser. The secondary beam frequency occurs 58 cm−1 to the high energy side of νp.

LASER‐INDUCED HIGH‐PRESSURE SHOCK WAVES IN WATER

C. E. Bell and J. A. Landt

Appl. Phys. Lett. 10, 46 (1967); http://dx.doi.org/10.1063/1.1754840 (3 pages) | Cited 43 times

Online Publication Date: 30 November 2004

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High‐pressure shock waves have been generated in water by Q‐switched lasers. A technique for observing the shocks using the laser as an illuminating source for a shadowgraph system and as a tool for generating the shocks is described.

CONTINUOUS DEFLECTION OF LASER BEAMS

E. G. H. Lean, C. F. Quate, and H. J. Shaw

Appl. Phys. Lett. 10, 48 (1967); http://dx.doi.org/10.1063/1.1754841 (4 pages) | Cited 17 times

Online Publication Date: 30 November 2004

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See Also: Erratum

Show Abstract
An optical beam has been continuously deflected through an angle of 4° by tuning an acoustic wave in a birefringent crystal of sapphire from 1.28 to 1.83 Gc. The method is based on the change in polarization of the deflected light as compared to the incident light. The system should be capable of deflecting an optical beam through 1000 spot diameters.

PHASE LOCKING OF LASER MODES BY CONTINUOUS CAVITY LENGTH VARIATION

P. W. Smith

Appl. Phys. Lett. 10, 51 (1967); http://dx.doi.org/10.1063/1.1754842 (3 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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Phase locking of the longitudinal modes of a gas laser has been obtained by translating one of the cavity mirrors at a constant velocity. The velocity required to obtain locking depends almost lineraly on excitation as long as only the fundamental transverse mode is oscillating. No plausible explanation has been found for these effects.

TUNABLE LiNbO3 OPTICAL OSCILLATOR WITH EXTERNAL MIRRORS

Robert C. Miller and W. A. Nordland

Appl. Phys. Lett. 10, 53 (1967); http://dx.doi.org/10.1063/1.1754843 (3 pages) | Cited 19 times

Online Publication Date: 30 November 2004

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With an optical cavity formed by external mirrors, parametric oscillation in LiNbO3 has been achieved from 0.684 μ to 2.355 μ − 70% of the theoretical range of the oscillator. The oscillator, pumped at 0.53 μ, was tuned by rotation of the LiNbO3 crystal. Total output powers of about 50 W were observed with pump powers of 5 × 104 W. The logarithm of the output power is proportional to the reciprocal of the optical length of the cavity.

InSb MOS INFRARED DETECTOR

R. J. Phelan and J. O. Dimmock

Appl. Phys. Lett. 10, 55 (1967); http://dx.doi.org/10.1063/1.1754844 (4 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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Infrared photovoltaic response and high quantum efficiency have been observed in a large‐area InSb, metal‐oxide‐semiconductor structure. Spectral measurements indicate that the response is due to the generation of electron‐hole pairs in a depletion region of the n‐type InSb at the InSb‐oxide interface. Pulsed current measurements yield a clear diode characteristic and the overall results are equivalent to what one would expect to obtain from a photodiode in series with a MOS capacitor.

SPACE‐CHARGE RECOMBINATION OSCILLATIONS IN SILICON

J. S. Moore, N. Holonyak, M. D. Sirkis, and M. M. Blouke

Appl. Phys. Lett. 10, 58 (1967); http://dx.doi.org/10.1063/1.1754845 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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Current oscillations in Au‐compensated Si p‐``i''‐n diodes have been studied. These oscillations are quite independent of the external circuit (i.e., they are not negative resistance oscillations) and are not attributable to transit time effects. The various parameters affecting these oscillations have been examined, and a space‐charge instability model which is in accord with the experimental data is proposed.

MOS STUDY OF INTERFACE‐STATE TIME CONSTANT DISPERSION

E. H. Nicollian and A. Goetzberger

Appl. Phys. Lett. 10, 60 (1967); http://dx.doi.org/10.1063/1.1754846 (3 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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The time constant dispersion of states at the Si☒SiO2 interface measured by the MOS conductance technique in the depletion region is too broad to be explained by the continuum model alone. By assuming that built‐in charges and charged interface states are randomly distributed over the plane of the interface, the resulting fluctuations of surface potential lead to a time constant dispersion which agrees with experiment. An explanation is also given of the single time constant observed at each bias in weak inversion for the continuum of states.

A PHYSICAL MODEL OF THE ELECTRO‐OPTIC EFFECT

S. K. Kurtz and F. N. H. Robinson

Appl. Phys. Lett. 10, 62 (1967); http://dx.doi.org/10.1063/1.1754847 (4 pages) | Cited 48 times

Online Publication Date: 30 November 2004

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A physical model of the electro‐optic effect is presented which is based on an extension of Bloembergen's anharmonic oscillator model for nonlinear optical processes. Expressions for the electro‐optic coefficients of centrosymmetric and noncentrosymmetric crystals are derived and shown to be in good agreement with experiment. Miller's empirical relation between the linear and nonlinear susceptibilities is also explained for the electro‐optic case.
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Erratum: High Temperature X‐Ray Topography of Si Wafers Strained by Thin Surface Films

Ilan A. Blech and Eugene S. Meieran

Appl. Phys. Lett. 10, 65 (1967); http://dx.doi.org/10.1063/1.1754848 (1 page)

Online Publication Date: 30 November 2004

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