Space‐charge‐limited currents were studied on p‐type silicon in the resistivity range from 10000–50000 Ω⋅cm. I vs V characteristics showed regions where the current was proportional to V, Vn (1 < n < 2), V2, V3 and to exp V, depending upon the applied field strength. Hall measurements were taken over the entire current range. Due to the large lifetime, a minority carrier space charge is built up at low values of an electric field. Further increases of the applied field lead to double injection.