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15 Feb 1967

Volume 10, Issue 4, pp. 111-138


MAGNETICALLY IMPLODED METAL FOILS

J. R. Freeman, E. C. Cnare, and R. C. Waag

Appl. Phys. Lett. 10, 111 (1967); http://dx.doi.org/10.1063/1.1754869 (3 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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Abstract Unavailable

VISUAL OBSERVATION OF FERROELECTRIC DOMAINS IN TGS

Stephen M. Shapiro, Robert W. Gammon, and Herman Z. Cummins

Appl. Phys. Lett. 10, 113 (1967); http://dx.doi.org/10.1063/1.1754870 (3 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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A ferroelectric triglycine sulfate crystal was illuminated by an intense CW laser beam; light scattered by the crystal at right angles to the beam was observed visually and photographed. The visible scattering column was found to be crossed by a series of bright lines oriented parallel to the ferroelectric axis whose appearance under various electric field and temperature conditions strongly suggest that they correspond to boundaries of ferroelectric domains. It therefore appears that this technique will permit direct observation of domain dynamics which, in the past, has been possible only with indirect techniques.

SINGLE‐FREQUENCY LIGHT FROM AN ARGON FM LASER

L. M. Osterink and Russell Targ

Appl. Phys. Lett. 10, 115 (1967); http://dx.doi.org/10.1063/1.1754871 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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An experiment is described in which 350 mW of single‐frequency light at 5145 Å was obtained using an argon FM laser with an external LiNbO3 modulator. Data on overall conversion efficiency from multifrequency to single‐frequency light are presented. Also discussed is the reduction in distortion with increasing optical power. Total sideband content was less than 0.125% of the maximum optical power, corresponding to an ac ripple of 3.5% rms.

DETECTOR PROPERTIES OF PHOTON‐MODULATED TUNNELING

Julius Cohen

Appl. Phys. Lett. 10, 118 (1967); http://dx.doi.org/10.1063/1.1754872 (2 pages)

Online Publication Date: 30 November 2004

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The use of photon‐modulated tunneling for photodetection is demonstrated in a structure of Te☒Al2O3☒Al. Compared with the response of the Te alone, measured in situ, the tunnel‐barrier device is much faster; the detectivity and the spectral response are similar.

SPACE‐CHARGE‐LIMITED CURRENTS IN HIGH‐RESISTIVITY p‐TYPE SILICON

Arno K. Hagenlocher

Appl. Phys. Lett. 10, 119 (1967); http://dx.doi.org/10.1063/1.1754873 (3 pages)

Online Publication Date: 30 November 2004

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Space‐charge‐limited currents were studied on p‐type silicon in the resistivity range from 10000–50000 Ω⋅cm. I vs V characteristics showed regions where the current was proportional to V, Vn (1 < n < 2), V2, V3 and to exp V, depending upon the applied field strength. Hall measurements were taken over the entire current range. Due to the large lifetime, a minority carrier space charge is built up at low values of an electric field. Further increases of the applied field lead to double injection.

LOW‐ENERGY ELECTRON DIFFRACTION STUDIES OF EPITAXIAL GROWTH OF SILVER AND GOLD IN ULTRAHIGH VACUUM

P. W. Palmberg, T. N. Rhodin, and C. J. Todd

Appl. Phys. Lett. 10, 122 (1967); http://dx.doi.org/10.1063/1.1754874 (3 pages) | Cited 22 times

Online Publication Date: 30 November 2004

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The occurrence of epitaxial growth of single‐crystal films of silver and gold has been found to depend critically on exposure of the substrate surface to an electron beam prior to deposition. Single‐crystal films with a (100)∥(100), (100)∥(100) orientation were produced on irradiation surfaces at low supersaturation levels in the absence of contaminating gases. It is proposed that the controlled production of point defects on the clean surface play a critical role in the nucleation and growth required for epitaxy.

A NEW CLASS OF LOW‐PRESSURE ARC COLUMNS WITH POSITIVE V‐I CHARACTERISTICS

H. J. G. Meyer, G. Ahsmann, and J. W. van der Laarse

Appl. Phys. Lett. 10, 124 (1967); http://dx.doi.org/10.1063/1.1754875 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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This Letter reports a new class of arc columns in the torr‐pressure range which in a wide range of voltages are voltage‐determined. The arc columns consist of mixtures of some noble gas seeded with tiny amounts of alkali vapor (pressure about 3 × 10−4 torr). At a certain critical current a very strong rise, by a factor of 4 or more, in column gradient occurs, accompanied by very striking visual changes in the column. An explanation in terms of the concept of ``donor depletion'' is given, the ``donor'' atoms being the alkali atoms. Possibilities for practical applications are mentioned.

ENHANCEMENT IN A Ho3+☒Yb3+ QUANTUM COUNTER BY ENERGY TRANSFER

L. Esterowitz, J. Noonan, and J. Bahler

Appl. Phys. Lett. 10, 126 (1967); http://dx.doi.org/10.1063/1.1754876 (2 pages) | Cited 35 times

Online Publication Date: 30 November 2004

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See Also: Erratum

Show Abstract
In all the infrared quantum counter systems reported to date, a single rare‐earth ion dopant was used as the activator. This limits the optimum concentration to about 1%, since above this value nonradiative processes begin to dominate. In order to increase the number of ions which can absorb the infrared signal Yb3+ was used as a sensitizer. By making use of the energy transfer from Yb3+ to Ho3+ the green quantum counter fluorescence was increased by more than two orders of magnitude.

HIGH‐FIELD HALL EFFECT OF SEMICONDUCTING CdS

Tohru Miyake and Masami Onuki

Appl. Phys. Lett. 10, 128 (1967); http://dx.doi.org/10.1063/1.1754877 (2 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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Hall voltage and conductivity of semiconducting CdS crystals with different mobilities have been measured at high pulsed electric fields. The electron density is nearly constant in a wide range of field which includes the field of current saturation. At fields above 2.1 × 103 V∕cm, electron multiplication due to impact ionization is observed. In the case of an electric field parallel to the c axis of the crystal, the Hall drift velocity at the saturation field is determined by the interaction of electrons with off‐axis shear waves of sound.

MEASUREMENT OF PHOTON ABSORPTION LOSS IN THE ACTIVE AND PASSIVE REGIONS OF A SEMICONDUCTOR LASER

R. Hunsperger and J. Ballantyne

Appl. Phys. Lett. 10, 130 (1967); http://dx.doi.org/10.1063/1.1754878 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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A technique is described for measuring the photon absorption coefficients in the active and passive regions of an electron‐beam‐pumped semiconductor laser. Measurements made at 4°K on n‐type, single‐crystal GaAs indicate that photon loss in the active region is due to free carrier absorption, and that this absorption coefficient increases linearly from 2.5 cm−1 to 47 cm−1 as donor concentration is varied from 2.4 × 1017 cm−3 to 4.7 × 1018 cm−3. For each case the active region absorption coefficient is less than that measured in the passive region, which varies from 354 cm−1 to 98 cm−1 over the same range of donor concentrations. The increased loss in the passive region is attributed to interband absorption transitions.

A MECHANISM FOR DAMAGE IN SOLIDS BY INTENSE LIGHT

A. Wasserman

Appl. Phys. Lett. 10, 132 (1967); http://dx.doi.org/10.1063/1.1754879 (2 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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Electron avalanche due to intraband optical absorption is discussed as a mechanism responsible for laser induced damage in certain insulating crystals.

SYNTHETIC PROUSTITE (Ag3AsS3): A NEW CRYSTAL FOR OPTICAL MIXING

K. F. Hulme, O. Jones, P. H. Davies, and M. V. Hobden

Appl. Phys. Lett. 10, 133 (1967); http://dx.doi.org/10.1063/1.1754880 (3 pages) | Cited 44 times

Online Publication Date: 30 November 2004

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Proustite (Ag3AsS3), a new acentric crystal for optical mixing, has been synthesized as large transparent single crystals. It is uniaxial, having point group symmetry 3m. Proustite transmits from 0.6 to 13 μm, and has a large negative birefringence (n0 − nE ∼ 0.2). Using second‐harmonic generation from a 1.152‐μm laser, we estimate the nonlinear coefficients to be ∣d22P∣ = 50∣d36KDP∣ and ∣d31P∣ = 30∣d36KDP∣. New optical mixing possibilities arise from the exceptionally wide range of processes that can be phase‐matched and the large nonlinear coefficients.

EFFECTS OF CHEMISORBED OXYGEN ON THE ELECTRICAL PROPERTIES OF CHEMICALLY SPRAYED CdS THIN FILMS

Frank B. Micheletti and Peter Mark

Appl. Phys. Lett. 10, 136 (1967); http://dx.doi.org/10.1063/1.1754881 (3 pages) | Cited 46 times

Online Publication Date: 30 November 2004

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The Hall mobility μ and conduction electron concentration n of semiconducting, spray‐deposited CdS thin films are both reduced by chemisorbed oxygen, the former by a larger factor than the latter. The temperature dependence of n is not affected by chemisorption whereas that of μ is changed from practically no dependence on temperature to a thermally activated dependence. This change is attributed to additional scattering introduced by the chemisorbed ions.
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Erratum: Spatially Resolved Laser Heterodyne Measurements of Plasma Densities in Weakly Ionized Gases

J. T. Verdeyen, B. E. Cherrington, and M. E. Fein

Appl. Phys. Lett. 10, 138 (1967); http://dx.doi.org/10.1063/1.1754882 (1 page) | Cited 1 time

Online Publication Date: 30 November 2004

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Abstract Unavailable
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