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Applied Physics Letters / Volume 100 / Issue 1 / STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

Appl. Phys. Lett. 100, 011914 (2012); http://dx.doi.org/10.1063/1.3671162 (3 pages)

Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2

H. Peelaers1, E. Kioupakis1,2, and C. G. Van de Walle1

1Materials Department, University of California, Santa Barbara, California 93106-5050, USA
2Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

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(Received 5 November 2011; accepted 29 November 2011; published online 6 January 2012)

Transparent conducting oxides combine high electrical conductivity with transparency to visible light. However, the large concentration of free electrons introduces a source of absorption that limits the transparency. Here, we evaluate the importance of phonon-assisted free-carrier absorption in SnO2 completely from first principles. Our results show that absorption is modest in the visible and much stronger in the UV and infrared. We also provide insight into the mechanisms that govern absorption in different wavelength regimes.

© 2012 American Institute of Physics

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KEYWORDS and PACS

Keywords

ab initio calculations, electrical conductivity, infrared spectra, phonons, tin compounds, transparency, ultraviolet spectra, visible spectra, wide band gap semiconductors

PACS

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 78.40.Ha

    Other nonmetallic inorganics

  • 78.30.Hv

    Other nonmetallic inorganics

  • 72.80.Jc

    Other crystalline inorganic semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3671162

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    E. Kioupakis, P. Rinke, A. Schleife, F. Bechstedt, and C. G. Van de Walle, Phys. Rev. B 81, 241201 (2010).


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