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Applied Physics Letters / Volume 100 / Issue 1 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 013504 (2012); http://dx.doi.org/10.1063/1.3674287 (3 pages)

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki1,2, Kohei Sasaki3, Akito Kuramata3, Takekazu Masui4, and Shigenobu Yamakoshi3

1National Institute of Information and Communications Technology, 4–2–1 Nukui-kitamachi, Koganei, Tokyo 184–8795, Japan
2PRESTO, Japan Science and Technology Agency (JST), 7 Gobancho, Chiyoda, Tokyo 102–0075, Japan
3Tamura Co., Ltd., 2–3–1 Hirosedai, Sayama, Saitama 350–1328, Japan
4Koha Co., Ltd., 2–6–8 Kouyama, Nerima, Tokyo 176–0022, Japan

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(Received 17 November 2011; accepted 6 December 2011; published online 4 January 2012)

We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.

© 2012 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, leakage currents, molecular beam epitaxial growth, Schottky gate field effect transistors, semiconductor growth, tin

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3674287

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, Appl. Phys. Lett. 90, 031912 (2007)APPLAB000090000003031912000001.

    P.-C. Chang, Z. Fan, W.-Y. Tseng, A. Rajagopal, and J. G. Lu, Appl. Phys. Lett. 87, 222102 (2005)APPLAB000087000022222102000001.

    K. Matsuzaki, H. Yanagi, T. Kamiya, H. Hiramatsu, K. Nomura, M. Hirano, and H. Hosono, Appl. Phys. Lett. 88, 092106 (2006)APPLAB000088000009092106000001.

    B. J. Baliga, J. Appl. Phys. 53, 1759 (1982)JAPIAU000053000003001759000001.

    M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Appl. Phys. Lett. 62, 1786 (1993)APPLAB000062000015001786000001.


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