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Applied Physics Letters / Volume 100 / Issue 1 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 013507 (2012); http://dx.doi.org/10.1063/1.3675453 (3 pages)

Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

JunShuai Xue, JinCheng Zhang, YaoWei Hou, Hao Zhou, JinFeng Zhang, and Yue Hao

Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China

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(Received 29 October 2011; accepted 13 December 2011; published online 6 January 2012)

High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD). High electron mobility of 1414 cm2/Vs was achieved along with a two-dimensional-electron-gas density of 2.55 × 1013 cm−2. We attribute it to the high quality PMOCVD-grown InAlN barriers and, additionally, to the novel GaN layer growth between two InAlN barriers, which consists of a thin GaN spacer to prevent indium-redistribution and indium-cluster formation during the subsequent growth and a relatively thick GaN channel to enhance electron mobility. High-electron-mobility-transistors fabricated on these heterostructures with 0.8-μm-length gate exhibit a maximum drain current of 906 mA/mm and a transconductance of 186 mS/mm.

© 2012 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electron mobility, gallium compounds, high electron mobility transistors, III-V semiconductors, indium compounds, MOCVD, semiconductor growth, semiconductor heterojunctions, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3675453

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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