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5 Mar 2012

Volume 100, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 100, 101903 (2012); http://dx.doi.org/10.1063/1.3673327 (3 pages)

Michael Ian Lapsley, Anaram Shahravan, Qingzhen Hao, Bala Krishna Juluri, Stephen Giardinelli, Mengqian Lu, Yanhui Zhao, I-Kao Chiang, Themis Matsoukas, and Tony Jun Huang
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Surface functionalization of 6H-SiC using organophosphonate monolayers

M. Auernhammer, S. J. Schoell, M. Sachsenhauser, K.-C. Liao, J. Schwartz, I. D. Sharp, and A. Cattani-Scholz

Appl. Phys. Lett. 100, 101601 (2012); http://dx.doi.org/10.1063/1.3691919 (4 pages)

Online Publication Date: 5 March 2012

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The synthesis and characterization of self-assembled monolayers prepared from 11-hydroxyundecyphosphonic acid and 9,10-diphenyl-2,6-diphosphonoanthracene on n-type 6H-SiC is described. Structural and chemical properties of these monolayers were investigated through contact angle measurements, atomic force microscopy, x-ray photoelectron spectroscopy, and Fourier transformation infrared spectroscopy, which indicate covalent bonding of the phosphonates to both (0001)- and (000-1)-oriented 6H-SiC crystal faces. Electrical characterization was achieved through contact potential difference and surface photovoltage measurements, which revealed significant changes in the work functions of the substrates by monolayer formation.
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81.65.-b Surface treatments
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces
68.37.Ps Atomic force microscopy (AFM)
72.40.+w Photoconduction and photovoltaic effects
72.80.Jc Other crystalline inorganic semiconductors
73.25.+i Surface conductivity and carrier phenomena

Interfacial stabilization of bilayered nanolaminates by asymmetric block copolymers

Arif O. Gozen, Jan Genzer, and Richard J. Spontak

Appl. Phys. Lett. 100, 101602 (2012); http://dx.doi.org/10.1063/1.3692102 (4 pages) | Cited 1 time

Online Publication Date: 6 March 2012

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Block copolymers are macromolecular surfactants that self-assemble into a variety of nanostructural elements or reduce the interfacial tension between incompatible polymers. Here, we examine the ability of diblock copolymers differing in composition to stabilize bilayered homopolymer nanolaminates on flat solid supports. In this arrangement, self-assembly competes with interfacial modification and, in one case, promotes destabilization of the top film. To discern the corresponding mechanism, we investigate nanolaminates with a thin copolymer layer positioned between the homopolymer layers. Stabilization commences when this middle layer is sufficiently thick so that the block that is miscible with the top layer forms a brush.
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81.16.Dn Self-assembly
61.46.-w Structure of nanoscale materials
68.55.am Polymers and organics

Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance

Seok-Ho Song, Hyun-Ho Yang, Chang-Hoon Han, Seung-Deok Ko, Seok-Hee Lee, and Jun-Bo Yoon

Appl. Phys. Lett. 100, 101603 (2012); http://dx.doi.org/10.1063/1.3691936 (3 pages)

Online Publication Date: 7 March 2012

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This letter presents a metal-oxide-semiconductor field effect transistor based humidity sensor which does not use any specific materials to sense the relative humidity. We simply make use of the low pressure chemical vapor deposited (LPCVD) silicon dioxide’s surface conductance change. When the gate is biased and then floated, the electrical charge in the gate is dissipated through the LPCVD silicon dioxide’s surface to the surrounding ground with a time constant depending on the surface conductance which, in turn, varies with humidity. With this method, extremely high sensitivity was achieved—the charge dissipation speed increased thousand times as the relative humidity increased.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
93.85.Jk Magnetic and electrical methods
85.30.Tv Field effect devices

Three-dimensional quantitative chemical roughness of buried ZrO2/In2O3 interfaces via energy-filtered electron tomography

X. Y. Zhong, B. Kabius, D. K. Schreiber, J. A. Eastman, D. D. Fong, and A. K. Petford-Long

Appl. Phys. Lett. 100, 101604 (2012); http://dx.doi.org/10.1063/1.3690861 (4 pages) | Cited 1 time

Online Publication Date: 9 March 2012

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The protocol to calculate the chemical roughness from three-dimensional (3-D) data cube acquired by energy-filtered electron tomography has been developed and applied to analyze the 3-D Zr distribution at the arbitrarily shaped interfaces in the ZrO2/In2O3 multilayer films. The calculated root-mean-square roughness quantitatively revealed the chemical roughness at the buried ZrO2/In2O3 interfaces, which is the deviation of Zr distribution from the ideal flat interface. Knowledge of the chemistry and structure of oxide interfaces in 3-D provides information useful for understanding changes in the behavior of a model ZrO2/In2O3 heterostructure that has potential to exhibit mixed conduction behavior.
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68.35.Ct Interface structure and roughness
72.60.+g Mixed conductivity and conductivity transitions
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