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12 Mar 2012

Volume 100, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 100, 111101 (2012); http://dx.doi.org/10.1063/1.3691957 (3 pages)

Christina Alpmann, Michael Esseling, Patrick Rose, and Cornelia Denz
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Engineering nonlinearity into memristors for passive crossbar applications

J. Joshua Yang, M.-X. Zhang, Matthew D. Pickett, Feng Miao, John Paul Strachan, Wen-Di Li, Wei Yi, Douglas A. A. Ohlberg, Byung Joon Choi, Wei Wu, Janice H. Nickel, Gilberto Medeiros-Ribeiro, and R. Stanley Williams

Appl. Phys. Lett. 100, 113501 (2012); http://dx.doi.org/10.1063/1.3693392 (4 pages) | Cited 8 times

Online Publication Date: 12 March 2012

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Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO2-x/TaOx oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
84.30.Sk Pulse and digital circuits

Proposal of spin complementary field effect transistor

Yoji Kunihashi, Makoto Kohda, Haruki Sanada, Hideki Gotoh, Tetsuomi Sogawa, and Junsaku Nitta

Appl. Phys. Lett. 100, 113502 (2012); http://dx.doi.org/10.1063/1.3689753 (3 pages) | Cited 3 times

Online Publication Date: 12 March 2012

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Spin complementary field effect transistor is proposed on the basis of gate-controlled persistent spin helix (PSH) states. Uniaxial effective magnetic field in the PSH state creates coherent spin propagation with or without precession. By the gate control of the Rashba spin-orbit interaction, the PSH state can be reversed to the inverted PSH state. Switching between two PSH states enables complementary output depending on the channel direction. Our proposed device could be a reconfigurable minimum unit of the spin-based logic circuit.
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85.30.Tv Field effect devices

Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices

P. Maraghechi, A. Foroughi-Abari, K. Cadien, and A. Y. Elezzabi

Appl. Phys. Lett. 100, 113503 (2012); http://dx.doi.org/10.1063/1.3694024 (5 pages) | Cited 1 time

Online Publication Date: 13 March 2012

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We report on the observation of electron resonant tunneling phenomenon through multi-stepped potential barriers of metal-insulator-insulator-insulator-metal (MIIIM) diodes. Through selection of oxide materials and atomically multilayering the potential barrier profile design, MIIIM devices consisting of Cr/Cr2O3-HfO2-Al2O3/Cr, and Cr/Cr2O3-Al2O3-HfO2/Cr, were fabricated and characterized. Due to electron resonat tunnling, via multiple quantum wells formation at the oxides interfaces, we show that such electron tunneling diodes exhibit extreme asymmetry and high non-linearity. These findings are significant in the development of future electron tunneling devices in many disciplines for either high or low voltage operations.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Axial force imparted by a conical radiofrequency magneto-plasma thruster

C. Charles, K. Takahashi, and R. W. Boswell

Appl. Phys. Lett. 100, 113504 (2012); http://dx.doi.org/10.1063/1.3694281 (3 pages) | Cited 3 times

Online Publication Date: 13 March 2012

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Direct thrust measurements of a low pressure (∼0.133 Pa) conical radiofrequency (rf at 13.56 MHz) argon plasma source show a total axial force of about 5 mN for an effective rf power of 650 W and a maximum magnetic field of 0.018 T, of which a measured value of 2.5 mN is imparted by the magnetic nozzle. A simplified model of thrust including contributions from the electron pressure and from the magnetic field pressure is developed. The magnetic nozzle is modelled as a “physical” nozzle of increasing cross-sectional area.
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52.50.Dg Plasma sources
52.30.Cv Magnetohydrodynamics (including electron magnetohydrodynamics)
52.25.Xz Magnetized plasmas
52.70.Gw Radio-frequency and microwave measurements

Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Sharif Md. Sadaf, El Mostafa Bourim, Xinjun Liu, Sakeb Hasan Choudhury, Dong-Wook Kim, and Hyunsang Hwang

Appl. Phys. Lett. 100, 113505 (2012); http://dx.doi.org/10.1063/1.3694016 (4 pages) | Cited 1 time

Online Publication Date: 14 March 2012

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We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction’s depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.
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77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.84.Cg PZT ceramics and other titanates
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thin-film-transistors

Mingzhi Dai and Wangying Xu

Appl. Phys. Lett. 100, 113506 (2012); http://dx.doi.org/10.1063/1.3682482 (3 pages)

Online Publication Date: 14 March 2012

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The polarization mechanism of oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) is not well understood. In this letter, a frequency-dependent circuit model for the oxide-based EDL TFTs is given. In addition, a quasi-EDL model is proposed to explain the conduction mechanism of this kind of EDL TFTs quantitatively. According to this model, in order to ensure an equivalent field-effect mobility up to 1.0 cm2/V · s, the minimum ITO channel thickness is ∼8.5 nm for the self-assembled indium-tin-oxide (ITO)-based EDL TFTs. With the circuit model and the quasi-EDL model, our results may contribute to improved control of oxide-based TFTs.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Graphene-lead zirconate titanate optothermal field effect transistors

Chun-Yi Hsieh, Yung-Ting Chen, Wei-Jyun Tan, Yang-Fang Chen, Wan Y. Shih, and Wei-Heng Shih

Appl. Phys. Lett. 100, 113507 (2012); http://dx.doi.org/10.1063/1.3693607 (4 pages)

Online Publication Date: 14 March 2012

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We have developed a pyroelectric field effect transistor (FET) based on a graphene-lead zirconate titanate (PZT) system. Under the incidence of a laser beam, the drain current can be increased or decreased depending on the direction of the polarization of the PZT substrate. The drain current sensitivity of the optothermal FET can reach up to 360 nA/mW at a drain field of 6.7 kV/m more than 5 orders of magnitude higher than that of the photogating transistors based on carbon nanotube on SiO2/Si substrate. Graphene is an excellent component for pyroelectric FET due to its high optical transparency and conductance.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices

Physical origins of nonlinearity in InP double heterojunction bipolar transistors

H. Xu, E. W. Iverson, K. Y. (Donald) Cheng, and M. Feng

Appl. Phys. Lett. 100, 113508 (2012); http://dx.doi.org/10.1063/1.3694285 (3 pages)

Online Publication Date: 15 March 2012

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Two tone inter-modulation distortion measurements were performed at 18 GHz to characterize the nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs). Two-dimensional hydrodynamic (HD) simulations were also performed, showing that the base push-out and charge accumulation effects are the dominant physical origins of nonlinearity for the Type-I DHBT at high current densities. Comparatively, the Type-I/II DHBT exhibits no such effects. Hence, we conclude that DHBTs having a Type-I/II energy band alignment will have an inherent linearity advantage compared to DHBTs with the Type-I energy band alignment.
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85.30.Pq Bipolar transistors

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna and J. Kuzmík

Appl. Phys. Lett. 100, 113509 (2012); http://dx.doi.org/10.1063/1.3694768 (4 pages) | Cited 2 times

Online Publication Date: 15 March 2012

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An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN based high electron mobility transistors is proposed. This model includes polarization induced charges at each heterostructure interface/surface, surface donors, oxide/barrier interface traps charge, and interfacial and bulk fixed oxide charge. Applicability of the model is demonstrated on GaN/AlGaN/GaN MOS heterostructure capacitors with Al2O3 and HfO2 gate dielectrics grown by atomic layer deposition with different barrier surface treatment and Al2O3 thicknesse.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Planar superconducting resonators with internal quality factors above one million

A. Megrant, C. Neill, R. Barends, B. Chiaro, Yu Chen, L. Feigl, J. Kelly, Erik Lucero, Matteo Mariantoni, P. J. J. O’Malley, D. Sank, A. Vainsencher, J. Wenner, T. C. White, Y. Yin, et al.

Appl. Phys. Lett. 100, 113510 (2012); http://dx.doi.org/10.1063/1.3693409 (4 pages) | Cited 9 times

Online Publication Date: 15 March 2012

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We describe the fabrication and measurement of microwave coplanar waveguide resonators with internal quality factors above 107 at high microwave powers and over 106 at low powers, with the best low power results approaching 2×106, corresponding to ∼ 1 photon in the resonator. These quality factors are achieved by controllably producing very smooth and clean interfaces between the resonators’ aluminum metallization and the underlying single crystal sapphire substrate. Additionally, we describe a method for analyzing the resonator microwave response, with which we can directly determine the internal quality factor and frequency of a resonator embedded in an imperfect measurement circuit.
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85.25.-j Superconducting devices
84.40.Az Waveguides, transmission lines, striplines
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
85.40.Ls Metallization, contacts, interconnects; device isolation

Improving the quality factor of cantilevers in viscous fluids by the adaptation of their interface

J. Linden and E. Oesterschulze

Appl. Phys. Lett. 100, 113511 (2012); http://dx.doi.org/10.1063/1.3694264 (3 pages) | Cited 2 times

Online Publication Date: 16 March 2012

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The adaptation of the fluid-microresonator interface enables the operation of cantilevers with high quality factor in viscous fluids. Partial wetting was proposed to implement the adapted interface by meniscus formation. An excellent quality factor of 79 was achieved in water applying the concept of partial wetting to thin film silicon nitride cantilevers. Compared to the quality factor calculated from Sader’s theory of the hydrodynamic damping of fully immersed cantilevers, this is an improvement by more than one decade. As a first application the partially wetted cantilevers were employed as mass sensors in water revealing a sensitivity of 2.77 fg/Hz.
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68.08.Bc Wetting
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.55.-a Thin film structure and morphology
66.20.-d Viscosity of liquids; diffusive momentum transport

A tunnel-induced injection field-effect transistor with steep subthreshold slope and high on-off current ratio

Zhan Zhan, Qianqian Huang, Ru Huang, Wenzhe Jiang, and Yangyuan Wang

Appl. Phys. Lett. 100, 113512 (2012); http://dx.doi.org/10.1063/1.3694766 (3 pages)

Online Publication Date: 16 March 2012

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In this letter, a tunnel-induced injection field-effect transistor (TI-FET) is proposed and demonstrated. Compared with conventional tunneling field-effect transistor, by changing N-type drain into P-type and inserting a N-type pocket layer into the underlap region, off-state current is appreciably reduced, due to higher hole barrier induced by the inserted N-type pocket layer which can prevent hole leakage current from the drain. During the switching process, the gate controlled tunneling electrons from the source are trapped in the N-type pocket region and simultaneously decrease the hole barrier of the drain, which can increase hole injection current much more rapidly than the hole diffusing over a barrier directly controlled by a gate as in P-type metal-oxide-semiconductor field-effect transistor and thus ensure a very steep subthreshold slope. When the device is switched on, on-state current can be enhanced due to the dominant hole current diffusing from the drain, which is higher than pure tunneling current. Therefore, this TI-FET can obtain high on-current, low off-current, as well as steep subthreshold slope.
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85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.75.Hh Spin polarized field effect transistors

Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device

Yang Yin Chen, G. Pourtois, C. Adelmann, L. Goux, B. Govoreanu, R. Degreave, M. Jurczak, J. A. Kittl, G. Groeseneken, and D. J. Wouters

Appl. Phys. Lett. 100, 113513 (2012); http://dx.doi.org/10.1063/1.3695078 (4 pages) | Cited 3 times

Online Publication Date: 16 March 2012

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In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >103 endurance and long retention at 150 °C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2+ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation.
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84.30.Sk Pulse and digital circuits
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