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12 Mar 2012

Volume 100, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 100, 111101 (2012); http://dx.doi.org/10.1063/1.3691957 (3 pages)

Christina Alpmann, Michael Esseling, Patrick Rose, and Cornelia Denz
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Resistive switching characteristics of nickel silicide layer embedded HfO2 film

Debashis Panda, Chun-Yang Huang, and Tseung-Yuen Tseng

Appl. Phys. Lett. 100, 112901 (2012); http://dx.doi.org/10.1063/1.3694045 (5 pages) | Cited 7 times

Online Publication Date: 13 March 2012

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Resistive switching behavior of the Ti/HfO2:NiSi:HfO2/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion from the electrodes and silicide layer on high-k film. Cross-sectional transmission electron microscopic micrographs revealed the thicknesses of the HfO2 and silicide layer. Significant decrease of forming voltage is observed for the 550 °C, 1 min annealed device embedded with nickel silicide (NiSi) layers. Entire device shows bipolar switching properties with very low set/reset voltage. The optimized annealed device with NiSi embedded layer exhibits improved memory performances such as good on/off ratio (>102), long retention more than 104 s, and reasonable endurance (>103 cycles). A conducting filament model based on two stacks structure is employed to well explain the switching behaviors.
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84.30.Sk Pulse and digital circuits

Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure

Min Zhang, Yuechan Kong, Jianjun Zhou, Fangshi Xue, Liang Li, Wenhai Jiang, Lanzhong Hao, Wenbo Luo, and Huizhong Zeng

Appl. Phys. Lett. 100, 112902 (2012); http://dx.doi.org/10.1063/1.3694283 (3 pages)

Online Publication Date: 13 March 2012

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Asymmetrical shift behaviors of capacitance-voltage (C-V) curve with opposite direction are observed in two AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructures with Pb(Zr,Ti)O3 and LiNbO3 gate dielectrics. By incorporating the switchable polar nature of the ferroelectric into a self-consistent calculation, the coupling effect between the ferroelectric and the interface charges is disclosed. The opposite initial orientation of ferroelectric dipoles determined by the interface charges is essentially responsible for the different C-V characteristics. A critical fixed charge density of −1.27 × 1013 cm−2 is obtained, which plays a key role in the dependence of the C-V characteristic on the ferroelectric polarization. The results pave the way for design of memory devices based on MFS structure with heteropolar interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.F- High-permittivity capacitive films
77.80.-e Ferroelectricity and antiferroelectricity
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Ea III-V semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Dynamic analysis of dielectric elastomer actuators

Bai-Xiang Xu, Ralf Mueller, Anika Theis, Markus Klassen, and Dietmar Gross

Appl. Phys. Lett. 100, 112903 (2012); http://dx.doi.org/10.1063/1.3694267 (4 pages)

Online Publication Date: 15 March 2012

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An analytical model is proposed for the dynamic analysis of a homogeneously deformed dielectric elastomer actuator (DEA) with a standard sandwich structure. The equation of motion for the DEA is obtained by the Euler-Lagrange equation. Numerical results of the model are presented to show the vibration and oscillation behaviour of the system. Resonance phenomenon and damping effects are investigated. Results are discussed in comparison with those of the related topics in the literature.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
07.07.Tw Servo and control equipment; robots
02.60.-x Numerical approximation and analysis

Spin glass-like phase below ∼210 K in magnetoelectric gallium ferrite

Somdutta Mukherjee, Ashish Garg, and Rajeev Gupta

Appl. Phys. Lett. 100, 112904 (2012); http://dx.doi.org/10.1063/1.3693400 (4 pages) | Cited 3 times

Online Publication Date: 15 March 2012

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In this letter, we show the presence of a spin-glass like phase in single crystals of magnetoelectric gallium ferrite (GaFeO3) below ∼210 K via temperature dependent ac and dc magnetization studies. Analysis of frequency dispersion of the susceptibility peak at ∼210 K using the critical slowing down model and Vogel-Fulcher law strongly suggests the existence of a classical spin-glass like phase. This classical spin glass behavior of GaFeO3 is understood in terms of an outcome of geometrical frustration arising from the inherent site disorder among the antiferromagnetically coupled Fe ions located at octahedral Ga and Fe sites.
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75.85.+t Magnetoelectric effects, multiferroics
75.50.Lk Spin glasses and other random magnets
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Ee Antiferromagnetics

Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

M. T. Nichols, H. Sinha, C. A. Wiltbank, G. A. Antonelli, Y. Nishi, and J. L. Shohet

Appl. Phys. Lett. 100, 112905 (2012); http://dx.doi.org/10.1063/1.3693526 (4 pages) | Cited 2 times

Online Publication Date: 15 March 2012

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Time-dependent dielectric breakdown (TDDB) is a major concern for low-k organosilicate dielectrics. To examine the effect of plasma exposure on TDDB degradation, time-to-breakdown measurements were made on porous SiCOH before and after exposure to plasma. A capillary-array window was used to separate charged particle and vacuum ultraviolet (VUV) photon bombardment. Samples exposed to VUV photons, and a combination of VUV photons and ion bombardment exhibited significant degradation in breakdown time. The samples exposed to VUV photons and ion bombardment showed more degradation in breakdown time in comparison to samples exposed to VUV photons alone.
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77.22.Jp Dielectric breakdown and space-charge effects
77.55.Bh Low-permittivity dielectric films
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.80.Jh Ion radiation effects
61.82.Ms Insulators
61.82.Pv Polymers, organic compounds

Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy

S. Toyoda, H. Kumigashira, M. Oshima, H. Sugaya, and H. Morita

Appl. Phys. Lett. 100, 112906 (2012); http://dx.doi.org/10.1063/1.3695166 (3 pages) | Cited 2 times

Online Publication Date: 16 March 2012

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We have demonstrated the determining factor of effective work function in TiN/HfO2/Al2O3/SiO2 gate stack structures by photoemission spectroscopy with synchrotron radiation. Difference in depth profiles indicate that the Si layer inserted at the HfO2/Al2O3 interface suppresses diffusion of Al atoms into the HfO2 layer after annealing, resulting in keeping magnitude of the high-k/SiO2 interface dipole. However, it is found that the increase of the effective work function cannot be explained only by the interface dipole model. We suggest that oxidation of the TiN metal electrode due to oxygen diffusion from the HfO2 layer is one of the most important factors.
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73.30.+y Surface double layers, Schottky barriers, and work functions
65.40.gh Work functions
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
79.60.Jv Interfaces; heterostructures; nanostructures
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