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19 Mar 2012

Volume 100, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 121101 (2012); http://dx.doi.org/10.1063/1.3693413 (4 pages)

Jolly Xavier, Raktim Dasgupta, Sunita Ahlawat, Joby Joseph, and Pradeep Kumar Gupta
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Plasmon resonant excitation in grating-gated AlN barrier transistors at terahertz frequency

Lin Wang, Weida Hu, Jun Wang, Xiaodong Wang, Shaowei Wang, Xiaoshuang Chen, and Wei Lu

Appl. Phys. Lett. 100, 123501 (2012); http://dx.doi.org/10.1063/1.3695154 (5 pages) | Cited 5 times

Online Publication Date: 19 March 2012

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This paper describes the plasmon resonances in AlN/GaN high electron mobility transistors. It is shown that wide tunable resonances with the frequency located at terahertz band can be obtained in this material system. The results originate from the ultra-high electron density induced by the polarization effect and higher order plasmon excitation. At room temperature, the dielectric response caused by phonon-polariton interactions obliterates the higher order plasmon resonances at frequency higher than 10 THz. However, the viscosity contribution to the damping of plasmons is very small in these devices. Our results also show the potential of this device for terahertz applications.
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85.30.Tv Field effect devices

Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors

Mehmet O. Baykan, Chadwin D. Young, Kerem Akarvardar, Prashant Majhi, Chris Hobbs, Paul Kirsch, Raj Jammy, Scott E. Thompson, and Toshikazu Nishida

Appl. Phys. Lett. 100, 123502 (2012); http://dx.doi.org/10.1063/1.3696038 (3 pages)

Online Publication Date: 20 March 2012

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We have investigated the physical mechanisms that result in comparable electron mobility measured from (100) and (110) sidewall double-gate fin field-effect transistors (FinFETs). Using a self-consistent Schrodinger-Poisson simulator coupled with a sp3d5s* tight-binding bandstructure, we have shown that the (100)/〈100〉 and (110)/〈110〉 average conductivity effective mass values are similar. This is explained by the much heavier non-parabolic confinement mass for Δ2 valley of (110) FinFETs, which leads to lower Δ2 energy than Δ4. Thus, for both (100) and (110), the majority of electrons occupy the Δ2 valley with 0.19m0 conductivity effective mass, resulting in comparable electron mobility.
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85.30.Tv Field effect devices
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

Z. G. Ju, S. T. Tan, Z.-H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir

Appl. Phys. Lett. 100, 123503 (2012); http://dx.doi.org/10.1063/1.3694054 (4 pages) | Cited 4 times

Online Publication Date: 20 March 2012

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A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.
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85.60.Jb Light-emitting devices

Channel length dependent sensitivity of Schottky contacted silicon nanowire field-effect transistor sensors

Kyeong-Sik Shin, Andrew Pan, and Chi On Chui

Appl. Phys. Lett. 100, 123504 (2012); http://dx.doi.org/10.1063/1.3696035 (4 pages)

Online Publication Date: 21 March 2012

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In this paper, we examine the dependence of channel length on the sensitivity of Schottky contacted silicon nanowire field-effect transistor sensors. The fabricated experimental devices are used as photosensors as well as chemical sensors for pH sensing. The difference in light illuminated current response depends on the channel length in the linear regime. However, the current ratio (ΔILight-Dark/IDark) shows a different trend, being much improved for a longer channel in the subthreshold regime, which can be explained by the different subthreshold swings. Finally, devices of two different channel lengths are applied to detect the pH value of a solution yielding results similar to photosensing. From these results, we suggest that it is desirable to shorten the channel if the sensor is working in the linear region and increase the channel length if the sensor is used in the subthreshold region.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
85.60.Gz Photodetectors (including infrared and CCD detectors)

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Jong Ho Lee, Gun Hwan Kim, Young Bae Ahn, Ji Woon Park, Seung Wook Ryu, Cheol Seong Hwang, and Hyeong Joon Kim

Appl. Phys. Lett. 100, 123505 (2012); http://dx.doi.org/10.1063/1.3696077 (4 pages) | Cited 4 times

Online Publication Date: 21 March 2012

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Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by ∼120 times at 0.5 V.
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84.30.Sk Pulse and digital circuits

Enlargement of a locally resonant sonic band gap by using double-sides stubbed phononic plates

M. Badreddine Assouar and Mourad Oudich

Appl. Phys. Lett. 100, 123506 (2012); http://dx.doi.org/10.1063/1.3696050 (4 pages) | Cited 6 times

Online Publication Date: 23 March 2012

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We report on the theoretical analysis of the enlargement of locally resonant acoustic band gap in two-dimensional sonic crystals based on a double-side stubbed plate. A significant enlargement of the relative bandwidth by a factor of 2 compared to the classical one-side stubbed plates is obtained and discussed. Based on an efficient finite element method, we show that this band gap enlargement is due to the coupling between the same nature of the resonant eigenmodes (in-plane or out-of-plane) of the stubs located in each plate side, producing a strong interaction with the plate’s Lamb modes. Acoustic displacement fields are computed to illustrate such mechanism and to discuss the physics behind it.
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62.65.+k Acoustical properties of solids
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
68.35.Iv Acoustical properties

Enhanced fluid mixing and separation of magnetic bead agglomerates based on dipolar interaction in rotating magnetic fields

F. Wittbracht, A. Weddemann, B. Eickenberg, M. Zahn, and A. Hütten

Appl. Phys. Lett. 100, 123507 (2012); http://dx.doi.org/10.1063/1.3696886 (4 pages) | Cited 2 times

Online Publication Date: 23 March 2012

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The exposure of a highly concentrated suspension of magnetic beads in a carrier liquid to a homogeneous magnetic field results in the formation of magnetic bead superstructures due to dipolar interactions. We present a microfluidic system which employs such agglomerates to simultaneously allow for mixing and separation applications. Within the chosen structure, an increase of the diffusivity of about 32% was observed and further a separation efficiency of about 80% is achieved for flow rates up to 100 μm/s.
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47.85.lk Mixing enhancement
75.20.En Metals and alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
47.57.eb Diffusion and aggregation
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafría, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, and G. Bersuker

Appl. Phys. Lett. 100, 123508 (2012); http://dx.doi.org/10.1063/1.3697648 (4 pages) | Cited 7 times

Online Publication Date: 23 March 2012

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Resistive switching (RS) phenomenon in the HfO2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies.
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84.30.Sk Pulse and digital circuits
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