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19 Mar 2012

Volume 100, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 100, 121101 (2012); http://dx.doi.org/10.1063/1.3693413 (4 pages)

Jolly Xavier, Raktim Dasgupta, Sunita Ahlawat, Joby Joseph, and Pradeep Kumar Gupta
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Low magnetic field reversal of electric polarization in a Y-type hexaferrite

Fen Wang, Tao Zou, Li-Qin Yan, Yi Liu, and Young Sun

Appl. Phys. Lett. 100, 122901 (2012); http://dx.doi.org/10.1063/1.3697636 (5 pages) | Cited 1 time

Online Publication Date: 19 March 2012

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We report on the magnetically tunable ferroelectricity and giant magnetoelectric sensitivity up to 250 K in a Y-type hexaferrite, BaSrCoZnFe11AlO22. Not only the magnitude but also the sign of electric polarization can be effectively controlled by applying low magnetic fields (a few hundreds of Oe) that modifies the spiral magnetic structures. The magnetically induced ferroelectricity is stabilized even in zero magnetic field. Decayless reproducible flipping of electric polarization by oscillating low magnetic fields is shown. The maximum linear magnetoelectric coefficient reaches a high value of ∼3.0 × 103 ps/m at 200 K.
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77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
75.85.+t Magnetoelectric effects, multiferroics
75.50.Gg Ferrimagnetics

Electric field induced intermediate phase and polarization rotation path in alkaline niobate based piezoceramics close to the rhombohedral and tetragonal phase boundary

Jian Fu, Ruzhong Zuo, S. C. Wu, J. Z. Jiang, L. Li, T. Y. Yang, Xiaohui Wang, and Longtu Li

Appl. Phys. Lett. 100, 122902 (2012); http://dx.doi.org/10.1063/1.3696071 (5 pages) | Cited 3 times

Online Publication Date: 20 March 2012

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High resolution synchrotron x-ray and dielectric measurements on unpoled and poled (Na,K)(Nb,Sb)O3-LiTaO3-xBaZrO3 lead-free ceramics close to the rhombohedral-tetragonal (R-T) phase boundary have suggested an additional lattice distortion induced by poling field. This intermediate phase (IP) is consistent with the orthorhombic (O) symmetry but lower symmetries cannot be discarded. As a result, a modified polarization rotation path along R-IP-T in poled ceramics would be responsible for their high piezoelectric activity owing to the effect of the IP bridging the R and T phases. Simultaneously, the electric field induced phase transition would probably contribute to the observed large piezoelectric strains.
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77.22.Ej Polarization and depolarization
77.65.Ly Strain-induced piezoelectric fields
77.22.Ch Permittivity (dielectric function)

Direct observation of ferroelectric polarization-modulated band bending at oxide interfaces

B. C. Huang, Y. T. Chen, Y. P. Chiu, Y. C. Huang, J. C. Yang, Y. C. Chen, and Y. H. Chu

Appl. Phys. Lett. 100, 122903 (2012); http://dx.doi.org/10.1063/1.3691615 (4 pages) | Cited 2 times

Online Publication Date: 20 March 2012

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This study presents a direct visualization of the influences of ferroelectric polarization on the electronic properties of the Schottky contact at the Nb-SrTiO3/BiFeO3 hetero-interface using scanning tunneling microscopy and spectroscopy (STM/S). The evolution of the local density of states across the Nb-SrTiO3/BiFeO3 interface reveals the interfacial band alignment and the characteristic quantities of the metal/ferroelectric contact. The unique combination of STM and STS in this study delivers an approach to obtain critical information on the interfacial electronic configurations of ferroelectric oxide interfaces and also their variation with ferroelectric polarization switching.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
73.30.+y Surface double layers, Schottky barriers, and work functions
77.80.-e Ferroelectricity and antiferroelectricity

Microwave dielectric dispersion in a multiferroic Pb(Fe1/2Nb1/2)O3 thin film

R. Sobiestianskas, W. Peng, N. Lemée, M. Karkut, J. Banys, J. Holc, and M. Kosec

Appl. Phys. Lett. 100, 122904 (2012); http://dx.doi.org/10.1063/1.3696043 (4 pages) | Cited 1 time

Online Publication Date: 21 March 2012

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We present the dielectric dispersion in a Pb(Fe1/2Nb1/2)O3 (PFN) thin film grown on (001) SrTiO3 substrate from 20 MHz to 20 GHz in the temperature range of 270 to 340 K. In the radio frequency region, the hopping charge transport and associated polar nanoregion and/or domain-wall motion contribute to the spectrum. In the microwave region, relaxational dispersion was observed with a dielectric contribution of Δε ≈ 600 at room temperature having a characteristic frequency (fm)0.4 = 9.8 · (T−T0) Hz, where T0 is 660 K. It is associated with possible mode-softening behavior, related to the onset of polar nanoregions at T0. The dielectric permittivity shows similarities with 1-dimensional Ising model behaviour.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.55.fj Niobate- and tantalate-based films
77.55.Nv Multiferroic/magnetoelectric films
77.84.Ek Niobates and tantalates
77.80.Dj Domain structure; hysteresis

Mapping of the epitaxial stabilization of quasi-tetragonal BiFeO3 with deposition temperature

N. Dix, R. Muralidharan, M. Varela, J. Fontcuberta, and F. Sánchez

Appl. Phys. Lett. 100, 122905 (2012); http://dx.doi.org/10.1063/1.3696048 (4 pages) | Cited 1 time

Online Publication Date: 22 March 2012

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Quasi-tetragonal BiFeO3 (T-BFO) multiferroic oxide is receiving much attention due to prospects of enhanced ferroelectric polarization and close-to-room-temperature phase transitions. Here, we report on the role of deposition temperature on the stabilization of the T-BFO phase on LaAlO3(001) substrates. T-BFO has only been obtained in a narrow temperature window. We will show that competitive formation of rhombohedral BFO and thermal decomposition at lower and higher temperatures, respectively, bounds the stability range of T-BFO. However, we show that addition of a secondary spinel phase, creating vertical interfaces, extends the formation range of T-BFO.
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81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.80.bg Compositional effects
77.22.Ej Polarization and depolarization
77.55.fp Other ferroelectric films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)

Ming Lei, J. H. Yum, J. Price, Todd W. Hudnall, C. W. Bielawski, S. K. Banerjee, P. S. Lysaght, G. Bersuker, and M. C. Downer

Appl. Phys. Lett. 100, 122906 (2012); http://dx.doi.org/10.1063/1.3697646 (4 pages) | Cited 2 times

Online Publication Date: 22 March 2012

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We report optical characterization of the conduction band offset (CBO) between atomic-layer-deposited single crystal BeO and Si using internal photoemission (IPE) and internal multi-photon photoemission (IMPE), and of the valence band offset (VBO) using synchrotron x-ray photoelectron spectroscopy. The IPE/IMPE measurements indicate a CBO of 2.31 ± 0.1 eV for 10 nm thick as-deposited oxides. For samples subjected to post-deposition anneal in N2 at 600 °C and 900 °C, it increases to 2.54 ± 0.1 eV and 2.61 ± 0.1 eV, respectively. The VBO is stable at 4.14 ± 0.2 eV for both as-deposited and annealed samples.
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78.66.Nk Insulators
79.60.Dp Adsorbed layers and thin films
71.20.Ps Other inorganic compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Gh Other heat and thermomechanical treatments
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Band alignment of HfO2 on SiO2/Si structure

Xiaolei Wang, Kai Han, Wenwu Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Xueli Ma, Chao Zhao, Dapeng Chen, and Tianchun Ye

Appl. Phys. Lett. 100, 122907 (2012); http://dx.doi.org/10.1063/1.3694274 (4 pages)

Online Publication Date: 23 March 2012

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Band alignment of HfO2 with various thicknesses on SiO2/Si structure is investigated by x-ray photoelectron spectroscopy (XPS). Band bending of HfO2/SiO2/Si system is found to vary with HfO2 thickness. Band alignment of entire HfO2/SiO2/Si is demonstrated using concepts of interfacial or surface gap states and charge neutrality level (CNL). The XPS results are interpreted and attributed to lower CNL of HfO2 than SiO2/Si which induces electron transfer from SiO2/Si to HfO2, resulting in band bending upward for SiO2/Si. These further confirm feasibility of gap state based theory in investigating band alignments of oxide/semiconductor and oxide/oxide interfaces.
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73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
71.20.Ps Other inorganic compounds
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