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19 Mar 2012

Volume 100, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 100, 121101 (2012); http://dx.doi.org/10.1063/1.3693413 (4 pages)

Jolly Xavier, Raktim Dasgupta, Sunita Ahlawat, Joby Joseph, and Pradeep Kumar Gupta
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Anisotropic charge transport and contact resistance of 6,13-bis(triisopropylsilylethynyl) pentacene field-effect transistors fabricated by a modified flow-coating method

Kenji Sakamoto, Junichi Ueno, Kirill Bulgarevich, and Kazushi Miki

Appl. Phys. Lett. 100, 123301 (2012); http://dx.doi.org/10.1063/1.3695169 (4 pages) | Cited 1 time

Online Publication Date: 19 March 2012

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Using a modified flow-coating method, bottom-gate/bottom-contact type organic field-effect transistors (OFETs) with a highly oriented active layer of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated. The flow-coated TIPS-pentacene films were fairly uniform and consisted of arrays of needle-shaped crystals along the flow-coating direction. The uniformity allowed us to determine the contact resistance by a transfer line method. The usefulness of the modified flow-coating method for fabricating high performance OFETs has been demonstrated, and we found that not only the field-effect mobility but also the contact resistance significantly depends on the channel current direction with respect to the flow-coating direction.
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85.30.Tv Field effect devices
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Evidence for different origins of the magnetic field effect on current and electroluminescence in organic light-emitting diodes

Andreas Buchschuster, Tobias D. Schmidt, and Wolfgang Brütting

Appl. Phys. Lett. 100, 123302 (2012); http://dx.doi.org/10.1063/1.3696051 (4 pages) | Cited 6 times

Online Publication Date: 20 March 2012

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An external magnetic field can change the current through an organic light-emitting diode and the luminance it emits. Existing models predict that both phenomena have the same behaviour and, therefore, a common origin; however, there are indications that they are not completely linked. As a direct proof, we measured the magnetic field effect in multilayer organic light-emitting diodes using Alq3 as emission layer. After successively adding blocking layers, we found a decrease of the magnetic field effect on the current, whereas the effect on the luminance remained at the same level. Thus, both effects can be separated from each other.
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85.60.Jb Light-emitting devices
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Organic integrated complementary inverters with ink-jet printed source/drain electrodes and sub-micron channels

E. Gili, M. Caironi, and H. Sirringhaus

Appl. Phys. Lett. 100, 123303 (2012); http://dx.doi.org/10.1063/1.3696487 (4 pages) | Cited 2 times

Online Publication Date: 22 March 2012

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We have demonstrated device operation of down-scaled n-type field effect transistors (FETs) with ink-jet printed source/drain contacts and sub-μm channel length, using the P(NDI2OD-T2) semiconducting polymer as active material. We integrated these devices with down-scaled p-type FETs made with bis(triisopropylsilylethynyl)pentacene to fabricate complementary inverter gates, in which both transistors and the printed interconnections were implemented on the same substrate. The devices operate at 10 V supply voltage, achieve noise margin values of 56% of math and a gain higher than 10. They are therefore suitable for printed, high performance organic integrated circuits with low supply voltage.
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85.30.Tv Field effect devices
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Field-induced evolution of metallic nano-tips in indium tin oxide-tris-(8-hydroxyquinoline) aluminum-aluminum device

Y. T. You, Q. Zeng, Y. Yao, M. L. Wang, B. Wu, Y. He, Y. M. Hu, C. Q. Wu, and X. Y. Hou

Appl. Phys. Lett. 100, 123304 (2012); http://dx.doi.org/10.1063/1.3697829 (4 pages) | Cited 1 time

Online Publication Date: 23 March 2012

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The effect of electric field and temperature on bistable characteristics of indium tin oxide/tris-(8-hydroxyquinoline) aluminum (Alq3)/aluminum (Al) device has been investigated. The switching time, during which the device turns from a high resistive (OFF) state to a low resistive (ON) state, increases with decreasing field and temperature. The observed phenomena are accounted for by a phenomenological model that metallic nano-tips may evolve under the influence of the electric field and temperature.
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85.35.-p Nanoelectronic devices
85.30.De Semiconductor-device characterization, design, and modeling
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