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26 Mar 2012

Volume 100, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 100, 133701 (2012); http://dx.doi.org/10.1063/1.3696019 (3 pages)

Hewei Liu, Feng Chen, Qing Yang, Pubo Qu, Shengguan He, Xianhua Wang, Jinhai Si, and Xun Hou
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A nonequilibrium argon-oxygen planar plasma jet using a half-confined dielectric barrier duct in ambient air

Qing Li, Hidemasa Takana, Yi-Kang Pu, and Hideya Nishiyama

Appl. Phys. Lett. 100, 133501 (2012); http://dx.doi.org/10.1063/1.3698135 (4 pages) | Cited 1 time

Online Publication Date: 27 March 2012

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A nonequilibrium argon plasma jet with oxygen addition, generated in a planar dielectric duct and issuing into ambient air with one edge stuck on a dielectric plane, is reported for the first time. This argon-oxygen plasma jet can be operated at low applied voltage as a filamentary discharge at atmospheric pressure. The addition of a small amount of oxygen results in the increase of produced ozone concentration and continuous emissions of centering at about 185 nm, 205 nm, 230 nm, and 253 nm. The synergistic generation of short wavelength ultraviolet emissions and active species is significantly important for plasma applications.
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52.77.-j Plasma applications
52.80.-s Electric discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.75.-d Plasma devices

Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Seung Wook Ryu, Young Bae Ahn, Hyeong Joon Kim, and Yoshio Nishi

Appl. Phys. Lett. 100, 133502 (2012); http://dx.doi.org/10.1063/1.3697691 (4 pages) | Cited 3 times

Online Publication Date: 27 March 2012

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Effects of Ti top electrode on unipolar resistive switching characteristics are investigated for NiO based resistive switching memory with Ni-inserting layer, compared with those for Pt-electrode. Current-voltage curves for forming process are almost identical for Ti-Ni-NiO-Pt and Pt-Ni-NiO-Pt structure, which may suggest that Ti does not chemically react with NiO. However, I-V curves for reset and set operation with Ti top electrode show improved resistive switching behaviors, such as reduction of reset current and less variation of both high and low resistance states. In order to understand the mechanism for improved resistive switching properties, electro-thermal simulation is performed, which shows that improvement in resistive switching characteristics is ascribed to reduced heat flow through top electrode resulting from lower thermal conductivity of Ti as compared to Pt.
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84.30.Sk Pulse and digital circuits
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Electron temperature in electrically isolated Si double quantum dots

A. Rossi, T. Ferrus, and D. A. Williams

Appl. Phys. Lett. 100, 133503 (2012); http://dx.doi.org/10.1063/1.3697832 (3 pages)

Online Publication Date: 27 March 2012

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Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector’s conductance, we investigate the dots’ occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector’s leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.
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81.05.Cy Elemental semiconductors
81.07.Ta Quantum dots
78.47.D- Time resolved spectroscopy (>1 psec)
03.67.Lx Quantum computation architectures and implementations
78.67.Hc Quantum dots

Microcrystalline silicon solar cells deposited using a plasma process excited by tailored voltage waveforms

E. V. Johnson, P. A. Delattre, and J. P. Booth

Appl. Phys. Lett. 100, 133504 (2012); http://dx.doi.org/10.1063/1.3699222 (3 pages) | Cited 8 times

Online Publication Date: 28 March 2012

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Thin film solar cells in a p-i-n structure with an absorbing layer of intrinsic hydrogenated microcrystalline silicon (μc-Si:H) deposited through plasma enhanced chemical vapour deposition excited by tailored voltage waveforms have been prepared. The use of an asymmetric voltage waveform decouples the ion-bombardment energy at the growth surface from the injected power and allows the growth of good quality μc-Si:H at reasonable deposition rates (3 Å/s) using low pressure, powder-free conditions. Unoptimized photovoltaic devices with an efficiency of 6.1% are demonstrated using an i-layer deposited at 1.3 Å/s and a process pressure of 500 mTorr.
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88.40.jj Silicon solar cells

Local resistive switching of Nd doped BiFeO3 thin films

Wan Shen, Andrew Bell, Sarah Karimi, and Ian M. Reaney

Appl. Phys. Lett. 100, 133505 (2012); http://dx.doi.org/10.1063/1.3701270 (4 pages) | Cited 1 time

Online Publication Date: 30 March 2012

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Local resistive switching behavior was investigated in Nd doped BiFeO3 thin film by conductive atomic force microscopy. The resistance of grains in Nd doped BiFeO3 thin films was reversibly switched between a low and high resistance state. When scanning a part of a grain interior, the whole grain eventually switched. Neighbouring grains, however, exhibited different values of conductance and remained unswitched. To explain this observation, it is proposed that the mobility of oxygen vacancies varies from grain to grain and that grain boundaries act as a barrier to their diffusion.
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73.61.Ng Insulators
68.37.Ps Atomic force microscopy (AFM)
61.72.jj Interstitials
61.72.Mm Grain and twin boundaries
68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology

Extraction of the sub-bandgap density-of-states in polymer thin-film transistors with the multi-frequency capacitance-voltage spectroscopy

Jaeman Jang, Jaehyeong Kim, Minkyung Bae, Jaewook Lee, Dong Myong Kim, Dae Hwan Kim, Jiyoul Lee, Bang-Lin Lee, Bonwon Koo, and Yong Wan Jin

Appl. Phys. Lett. 100, 133506 (2012); http://dx.doi.org/10.1063/1.3698455 (5 pages) | Cited 1 time

Online Publication Date: 30 March 2012

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The multi-frequency capacitance-voltage (C-V) spectroscopy is proposed for extracting the sub-bandgap density-of-states (DOS) of polymer semiconductors and demonstrated in three different thiophene-based organic thin-film transistors including poly(3-hexylthiophene), poly(3,3′′′-didodecylquaterthiophene), and poly(didodecylquaterthiophene-alt-didodecylbithiazole). The density of exponential tail and exponential deep states are extracted to be in the range of 3.0 × 1018 ∼ 1.5 × 1019 cm−3 eV−1 and 3.0 × 1016 ∼ 3.0 × 1017 cm−3 eV−1, respectively. The extracted DOS correspond to the polymer semiconductor-dependence of the measured crystallinity and mobility. In addition, the extracted DOS values are verified by comparing the measured I-V characteristics with the simulated results through a technology computer-aided design tool.
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85.30.Tv Field effect devices

Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics

Chao Chen, Xingzhao Liu, Jihua Zhang, Benlang Tian, Hongchuan Jiang, Wanli Zhang, and Yanrong Li

Appl. Phys. Lett. 100, 133507 (2012); http://dx.doi.org/10.1063/1.3699029 (3 pages)

Online Publication Date: 30 March 2012

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The enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs) were realized by using fluorinated Al2O3 as gate dielectrics. The variations in binding-energy spectrum and valance-band spectrum in fluorinated-Al2O3/AlGaN/GaN are studied in this Letter, providing insights to mechanism underlying drastic threshold voltage (Vth) modulation of AlGaN/GaN MISHEMTs with fluorinated Al2O3 gate dielectrics. It was found that not the surface potential but rather the negative charges in Al2O3 gate dielectrics are the primary factor responsible for conversion from depletion-mode (D-mode) to E-mode AlGaN/GaN MISHEMTs by using fluorinated Al2O3 as gate dielectrics.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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