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26 Mar 2012

Volume 100, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 133701 (2012); http://dx.doi.org/10.1063/1.3696019 (3 pages)

Hewei Liu, Feng Chen, Qing Yang, Pubo Qu, Shengguan He, Xianhua Wang, Jinhai Si, and Xun Hou
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The improved polarization retention through high-field charge injection in highly strained BiFeO3 thin films with preferred domain orientations

X. B. Liu, N. F. Ding, A. Q. Jiang, and P. X. Yang

Appl. Phys. Lett. 100, 132901 (2012); http://dx.doi.org/10.1063/1.3697989 (4 pages) | Cited 1 time

Online Publication Date: 26 March 2012

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We transferred nanosecond ferroelectric domain switching currents of leaky Fe-enriched bismuth ferrite thin films into polarization-electric (P-E) hysteresis loops from which nanosecond-range polarization retention as well as imprint was extracted. All the films suffer from a quick remanent polarization loss after 4 μs due to the appearance of a strong depolarization field arising from frozen compensation charges and large lattice-mismatching stresses. However, under an opposite field stressing the polarization enhances via near-electrode charge injection and approaches a theoretical value after 1000 s, which supplies an effective way to symmetrize the P-E loop of a highly strained ferroelectric thin film.
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77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.55.fp Other ferroelectric films

Aging associated domain evolution in the orthorhombic phase of 〈001〉 textured (K0.5Na0.5)Nb0.97Sb0.03O3 ceramics

Jianjun Yao, Jiefang Li, D. Viehland, Yunfei Chang, and Gary L. Messing

Appl. Phys. Lett. 100, 132902 (2012); http://dx.doi.org/10.1063/1.3698154 (4 pages) | Cited 2 times

Online Publication Date: 26 March 2012

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Aging effect due to domain evolution in (K0.5,Na0.5)Nb0.97Sb0.03O3 〈001〉 textured ceramics was investigated by piezoresponse force microscopy. We find that aging effect is pronounced in the orthorhombic single phase field. A more uniform and finer domain structure on the order of several hundred nanometers was observed after aging and is believed to originate from defect-migration. After poling, large domains (∼10 μm) with smooth boundaries were found in the aged condition due to the more readily redistribution of uniform and finer domain structures after aging.
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77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
77.84.Ek Niobates and tantalates
61.66.Fn Inorganic compounds

Band gap tuning in ferroelectric Bi4Ti3O12 by alloying with LaTMO3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al)

Woo Seok Choi and Ho Nyung Lee

Appl. Phys. Lett. 100, 132903 (2012); http://dx.doi.org/10.1063/1.3697645 (3 pages)

Online Publication Date: 26 March 2012

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We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of BiT, some of BiT-LaTMO3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO3 showed the largest band gap reduction by ∼1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
71.20.Ps Other inorganic compounds
68.55.aj Insulators
81.15.Fg Pulsed laser ablation deposition

Giant converse magnetoelectric effect in multi-push-pull mode Metglas/Pb(Zr,Ti)O3/Metglas laminates

Menghui Li, Yaojin Wang, Davresh Hasanyan, Jiefang Li, and D. Viehland

Appl. Phys. Lett. 100, 132904 (2012); http://dx.doi.org/10.1063/1.3698114 (3 pages) | Cited 2 times

Online Publication Date: 27 March 2012

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The converse magnetoelectric (CME) effect was investigated theoretically and experimentally for multi-push-pull mode Metglas/Pb(Zr,Ti)O3/Metglas laminates. The experimental and theoretical values of the CME coefficient (αB) exhibited similar trends. A large αB = 6.94 G/V was observed at 1 kHz under a dc magnetic bias of 11 Oe. At an electromechanical resonance frequency of 29.6 kHz, the laminate exhibited a giant value of αB = 79.5 G/V. These results show significantly enhanced CME effects in multi-push-pull mode laminates, compared to previously reported ones with different structures and materials.
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75.85.+t Magnetoelectric effects, multiferroics
77.65.-j Piezoelectricity and electromechanical effects

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Jun Wu, E. Lind, R. Timm, Martin Hjort, A. Mikkelsen, and L.-E. Wernersson

Appl. Phys. Lett. 100, 132905 (2012); http://dx.doi.org/10.1063/1.3698094 (3 pages) | Cited 2 times

Online Publication Date: 28 March 2012

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The influence of InAs orientations and high-k oxide deposition conditions on the electrical and structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results suggest that the interface traps around the conduction band edge are correlated to the As-oxide amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide determines the border trap density, hence the capacitance frequency dispersion. The comparison of different processing conditions is discussed, favoring a 350 °C high-k oxide deposition on (111)B substrates followed by an annealing procedure at 400 °C.
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84.32.Tt Capacitors
85.30.-z Semiconductor devices

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi

Appl. Phys. Lett. 100, 132906 (2012); http://dx.doi.org/10.1063/1.3698095 (3 pages) | Cited 7 times

Online Publication Date: 28 March 2012

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We have studied the impact of the Al2O3 inter-layer on interface properties of HfO2/InGaAs metal-oxide-semiconductor (MOS) interfaces. We have found that the insertion of the ultrathin Al2O3 inter-layer (2 cycle: 0.2 nm) can effectively improve the HfO2/InGaAs interface properties. The frequency dispersion and the stretch-out of C-V characteristics are improved, and the interface trap density (Dit) value is significantly decreased by the 2 cycle Al2O3 inter-layer. Finally, we have demonstrated the 1-nm-thick capacitance equivalent thickness in the HfO2/Al2O3/InGaAs MOS capacitors with good interface properties and low gate leakage of 2.4 × 10−2 A/cm2.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors

Strain effect on the surface potential and nanoscale switching characteristics of multiferroic BiFeO3 thin films

F. Yan, S. Miao, T. J. Zhu, M. O. Lai, and L. Lu

Appl. Phys. Lett. 100, 132907 (2012); http://dx.doi.org/10.1063/1.3698155 (5 pages) | Cited 2 times

Online Publication Date: 28 March 2012

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The BiFeO3 films were deposited on the SrTiO3 (001) substrates via tuning the thickness of the SrRuO3 (SRO) bottom electrode by pulsed laser deposition. The macroscopic ferroelectric and dielectric properties were dramatically impacted by the various nanoscale domain structures for both films due to the tunable SRO thickness. The nanoscale domain switching behaviors for both films were investigated via piezoresponse force microscopy, and results suggest that the domain structure could be changed by tuning the strain state. The surface potential investigation indicates that strain helps increase data storage density and stability.
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77.80.Fm Switching phenomena
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Fg Pulsed laser ablation deposition
77.55.Nv Multiferroic/magnetoelectric films
77.55.fp Other ferroelectric films
77.80.Dj Domain structure; hysteresis

Piezoelectric properties and temperature stability of Mn-doped Pb(Mg1/3Nb2/3)-PbZrO3-PbTiO3 textured ceramics

Yongke Yan, Kyung-Hoon Cho, and Shashank Priya

Appl. Phys. Lett. 100, 132908 (2012); http://dx.doi.org/10.1063/1.3698157 (5 pages) | Cited 3 times

Online Publication Date: 28 March 2012

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In this letter, we report the electromechanical properties of textured 0.4Pb(Mg1/3Nb2/3)O3–0.25PbZrO3–0.35PbTiO3 (PMN-PZT) composition which has relatively high rhombohedral to tetragonal (R-T) transition temperature (TR-T of 160 °C) and Curie temperature (TC of 234 °C) and explore the effect of Mn-doping on this composition. It was found that MnO2-doped textured PMN-PZT ceramics with 5 vol. % BaTiO3 template (T-5BT) exhibited inferior temperature stability. The coupling factor (k31) of T-5BT ceramic started to degrade from 75 °C while the random counterpart showed a very stable tendency up to 180 °C. This degradation was associated with the “interface region” formed in the vicinity of BT template. MnO2 doped PMN-PZT ceramics textured with 3 vol. % BT and subsequently poled at 140 °C (T-3BT140) exhibited very stable and high k31 (>0.53) in a wide temperature range from room temperature to 130 °C through reduction in the interface region volume. Further, the T-3BT140 ceramic exhibited excellent hard and soft combinatory piezoelectric properties of d33 = 720 pC/N, k31 = 0.53, Qm = 403, tan δ = 0.3% which are very promising for high power and magnetoelectric applications.
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77.65.-j Piezoelectricity and electromechanical effects
64.70.K- Solid-solid transitions
77.84.Cg PZT ceramics and other titanates
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Nano conductive particle dispersed percolative thin film ceramics with high permittivity and high tunability

Zongrong Wang, Tao Hu, Xiaoge Li, Gaorong Han, Wenjian Weng, Ning Ma, and Piyi Du

Appl. Phys. Lett. 100, 132909 (2012); http://dx.doi.org/10.1063/1.3699012 (4 pages) | Cited 3 times

Online Publication Date: 30 March 2012

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Conductive Ag nanoparticles dispersed Pb0.4Sr0.6TiO3 (PST) thin film was obtained by dual complexing agents of citric acid and acetylacetone controlled sol route heated in air without using reduction atmosphere. Percolation behaviour occurs with the nano-particle fraction adjacent to a threshold. Dielectric constant of the percolative composite thin film with Ag nanoparticles near the threshold is 4 times higher than that of the one without Ag nanoparticles. Tunability of the PST thin film increases dramatically by 42% with inner electric field by Ag nanoparticles inside.
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81.16.-c Methods of micro- and nanofabrication and processing
81.40.Gh Other heat and thermomechanical treatments
68.55.at Other materials
77.55.-g Dielectric thin films
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
77.22.Ch Permittivity (dielectric function)

Experimental demonstration of wakefield effects in a THz planar diamond accelerating structure

S. Antipov, C. Jing, A. Kanareykin, J. E. Butler, V. Yakimenko, M. Fedurin, K. Kusche, and W. Gai

Appl. Phys. Lett. 100, 132910 (2012); http://dx.doi.org/10.1063/1.3697640 (3 pages) | Cited 2 times

Online Publication Date: 30 March 2012

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We have directly measured THz wakefields induced by a subpicosecond, intense relativistic electron bunch in a diamond loaded accelerating structure via the wakefield acceleration method. We present here the beam test results from the diamond based structure. Diamond has been chosen for its high breakdown threshold and unique thermoconductive properties. Fields produced by a leading (drive) beam were used to accelerate a trailing (witness) electron bunch, which followed the drive bunch at a variable distance. The energy gain of a witness bunch as a function of its separation from the drive bunch describes the time structure of the generated wakefield.
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29.27.Eg Beam handling; beam transport
29.20.Ej Linear accelerators
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