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26 Mar 2012

Volume 100, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 100, 133701 (2012); http://dx.doi.org/10.1063/1.3696019 (3 pages)

Hewei Liu, Feng Chen, Qing Yang, Pubo Qu, Shengguan He, Xianhua Wang, Jinhai Si, and Xun Hou
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Nonlocal spin transports in nanopillar-based lateral spin valve

S. Nonoguchi, T. Nomura, and T. Kimura

Appl. Phys. Lett. 100, 132401 (2012); http://dx.doi.org/10.1063/1.3698092 (3 pages) | Cited 1 time

Online Publication Date: 26 March 2012

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A different type lateral spin valve structure consisting of a pair of the closely located Permalloy nanopillars on a uniform copper film has been developed. From the bias-current and temperature dependences of the spin signal, the nanopillar lateral spin valve was found to have several advantages for generating the pure spin current over the conventional lateral spin valves. We also show that the limitation of the generating spin current can be enhanced by increasing the number of the spin injectors.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Origin of magnetic properties and martensitic transformation of Ni-Mn-In magnetic shape memory alloys

C. L. Tan, Y. W. Huang, X. H. Tian, J. X. Jiang, and W. Cai

Appl. Phys. Lett. 100, 132402 (2012); http://dx.doi.org/10.1063/1.3697637 (4 pages) | Cited 6 times

Online Publication Date: 26 March 2012

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The nature of unique magnetic properties and martensitic transformation of Ni2Mn1+xIn1−x shape memory alloy has been revealed by first-principles calculations. The uncommon magnetic properties occurring upon martensitic transformation are originated from the change of Mn-Mn interatomic distances. The critical value of Mn-Mn interatomic distance corresponding to the change of magnetic interactions has been determined. A decrease of the intensity of Ni 3d states at the Fermi level upon martensitic transformation has been observed for x = 0.5. Moreover, the Ni 3d-Mn 3d hybridization plays an important role in establishing the magnetic properties and driving the martensitic transformation.
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81.30.Kf Martensitic transformations
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
71.20.Be Transition metals and alloys
71.15.-m Methods of electronic structure calculations
64.70.kd Metals and alloys
75.50.Cc Other ferromagnetic metals and alloys

Magnetic and structural properties of the Fe layers in CoO/Fe/Ag(001) heterostructure

Rantej Bali, Márcio M. Soares, Aline Y. Ramos, Hélio C. N. Tolentino, Fikret Yildiz, Clemence Boudot, Olivier Proux, Maurizio De Santis, Marek Przybylski, and Jürgen Kirschner

Appl. Phys. Lett. 100, 132403 (2012); http://dx.doi.org/10.1063/1.3695158 (4 pages) | Cited 1 time

Online Publication Date: 26 March 2012

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The influence of interfacial oxidation on the magnetic behaviour of CoO covered Fe/Ag(001) is reported. Coverage with CoO causes the formation of a mixed Fe2O3-Fe3O4 interfacial oxide layer. The depth of the Fe-oxide varies with the thickness of pre-covered Fe and above 8 monolayers (MLs) of Fe the oxide depth becomes constant at 2 ML. Differences in exchange bias and coercivity obtained from magnetic field and zero field cooling nearly vanish above 8 ML Fe thickness, showing a direct correlation between the magnetic behaviour of Fe and structure of the interfacial Fe-oxide layer.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.35.Ct Interface structure and roughness
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Vv High coercivity materials
75.30.Et Exchange and superexchange interactions
75.30.Sg Magnetocaloric effect, magnetic cooling

S doping effect on the properties of double perovskite La2FeMoO6

Haiping Wu, Ruifeng Lu, Weishi Tan, Chuanyun Xiao, Kaiming Deng, and Yan Qian

Appl. Phys. Lett. 100, 132404 (2012); http://dx.doi.org/10.1063/1.3697675 (5 pages) | Cited 2 times

Online Publication Date: 26 March 2012

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The effect of S-doping on the properties of double perovskite La2FeMoO6 (LFMO) is investigated by using density-functional calculations. The results reveal that the ground state of the series La2FeMoO6−xSx is ferrimagnetic, with I4/mmm symmetry for x = 0 and 6, and I4mm symmetry for the others. With increasing the amount of S ions, the volume increases nearly linearly. The estimated Néel temperature of the compounds decreases from 537 K for La2FeMoO6 to 454 K for La2FeMoS6 upon S doping. In addition, La2FeMoO6 and the end member La2FeMoS6 both exhibit half-metallic nature, while the others behave as full metal.
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61.72.up Other materials
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Gg Ferrimagnetics
71.20.Ps Other inorganic compounds
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

Ferromagnetic phase transition in zinc blende (Mn,Cr)S-layers grown by molecular beam epitaxy

M. Demper, W. Heimbrodt, C. Bradford, K. A. Prior, J. Kehrle, H.-A. Krug von Nidda, and A. Loidl

Appl. Phys. Lett. 100, 132405 (2012); http://dx.doi.org/10.1063/1.3697834 (3 pages)

Online Publication Date: 26 March 2012

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We studied the magnetization of zinc blende Mn1-xCrxS films embedded between diamagnetic ZnSe layers grown by molecular beam epitaxy with chromium mole fractions x ≤ 0.7. These ternary semiconductors exhibit an increasing ferromagnetic contribution with increasing x caused by competing antiferromagnetic and ferromagnetic coupling. As a result, whereas MnS in the zinc blende phase is a pure antiferromagnet, it was found that with increasing x zinc blende Mn1−xCrxS became a ferromagnet. The ferromagnetic phase transition dominates in case of x greater than about 0.5. Hence, we conclude that metastable zinc blende CrS will be a ferromagnetic material with half-metallic character in contrast to the analogous stable NiAs-structure which exhibits an antiferromagnetic phase transition.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.20.Ck Nonmetals

Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier

Shumin He, Hongliang Bai, Guolei Liu, Qiang Li, Shishen Yan, Yanxue Chen, Liangmo Mei, Houfang Liu, Shouguo Wang, and Xiufeng Han

Appl. Phys. Lett. 100, 132406 (2012); http://dx.doi.org/10.1063/1.3698151 (3 pages) | Cited 1 time

Online Publication Date: 27 March 2012

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The fully epitaxial ZnO-based ZnO:Co/ZnO:Mg/ZnO:Co magnetic tunnel junctions were grown on Al2O3(0001) substrate by oxygen plasma-assisted molecular beam epitaxy. The magnetoresistance behavior and spin injection through ZnO:Mg barrier were investigated. An enhanced positive tunnel magnetoresistance ratio of 85.6% is observed at 1.8 T at 5 K. The junction resistance at zero magnetic field is linear with respect to temperature power law T−4/3 between 5 K and 70 K, indicating that carriers tunnel through ZnO:Mg barrier via two localized states.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.25.-b Spin polarized transport

Magnetism mechanism in ZnO and ZnO doped with nonmagnetic elements X (X = Li, Mg, and Al): A first-principles study

Q. J. Wang, J. B. Wang, X. L. Zhong, Q. H. Tan, Z. Hu, and Y. C. Zhou

Appl. Phys. Lett. 100, 132407 (2012); http://dx.doi.org/10.1063/1.3698096 (5 pages) | Cited 1 time

Online Publication Date: 28 March 2012

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First-principles calculations are performed to study the magnetism mechanism in undoped ZnO and ZnO doped with nonmagnetic elements X (X = Li, Mg, and Al). In undoped ZnO, it is found that the Zn vacancy is spin-polarized with a magnetic moment of 1.54 μB. The ferromagnetic coupling between two Zn vacancies is favorable in energy and a band coupling model is used to explain the magnetic coupling. In ZnO doped with nonmagnetic elements X, the magnetism is also attributed to the presence of Zn vacancies. The introduction of X reduces the formation energy of Zn vacancy and stabilizes it to some extent.
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75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
61.72.jd Vacancies

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

M. Gajek, J. J. Nowak, J. Z. Sun, P. L. Trouilloud, E. J. O’Sullivan, D. W. Abraham, M. C. Gaidis, G. Hu, S. Brown, Y. Zhu, R. P. Robertazzi, W. J. Gallagher, and D. C. Worledge

Appl. Phys. Lett. 100, 132408 (2012); http://dx.doi.org/10.1063/1.3694270 (3 pages) | Cited 12 times

Online Publication Date: 28 March 2012

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Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.
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84.30.Sk Pulse and digital circuits

Voltage impulse induced bistable magnetization switching in multiferroic heterostructures

T. X. Nan, Z. Y. Zhou, J. Lou, M. Liu, X. Yang, Y. Gao, S. Rand, and N. X. Sun

Appl. Phys. Lett. 100, 132409 (2012); http://dx.doi.org/10.1063/1.3698363 (3 pages) | Cited 3 times

Online Publication Date: 28 March 2012

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We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.
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75.85.+t Magnetoelectric effects, multiferroics
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
77.80.Fm Switching phenomena

Evaluation of orbital moment in Ni-Zn ferrites: A magnetic Compton scattering study

B. L. Ahuja, H. S. Mund, Shailja Tiwari, Jagrati Sahariya, Alpa Dashora, M. Itou, and Y. Sakurai

Appl. Phys. Lett. 100, 132410 (2012); http://dx.doi.org/10.1063/1.3698385 (4 pages) | Cited 1 time

Online Publication Date: 28 March 2012

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Temperature dependent magnetic Compton profiles of Ni1−xZnxFe2O4 (x = 0.0, 0.1, 0.2) ferrites have been decomposed into component profiles to determine the site-specific magnetic moments. For a quantitative evaluation of orbital moment, the spin momentum density data have been combined with magnetization data. Interestingly, the orbital magnetic moment decreases from 0.25 ± 0.03 μB/f.u. (for x = 0.0) to 0.09 ± 0.03 μB/f.u. (for x = 0.2) which is in contrast to spin moment. A decrease in ratio of orbital to spin moments in Ni rich ferrites is explained on the basis of spin-orbit coupling and crystal field interaction.
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78.70.Ck X-ray scattering
61.80.Cb X-ray effects
61.80.Ed γ-ray effects
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
75.10.Dg Crystal-field theory and spin Hamiltonians
75.30.Cr Saturation moments and magnetic susceptibilities

Attenuation of propagating spin wave induced by layered nanostructures

K. Sekiguchi, T. N. Vader, K. Yamada, S. Fukami, N. Ishiwata, S. M. Seo, S. W. Lee, K. J. Lee, and T. Ono

Appl. Phys. Lett. 100, 132411 (2012); http://dx.doi.org/10.1063/1.3699020 (3 pages) | Cited 1 time

Online Publication Date: 30 March 2012

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Spin wave attenuation in the layered [FeNi/Pt]6/FeNi thin films was investigated by the time-domain electrical measurement. The spin-wave waveform was detected with an asymmetric coplanar strip transmission line, as an induced voltage flowing into a fast oscilloscope. We report that the amplitude of a spin-wave packet was systematically changed by controlling the thickness of a platinum layer, up to a maximum change of 50%. The virtues of spin wave, ultrafast propagation velocity and non-reciprocal emission, are preserved in this manner. This means that the Pt layer can manipulate an arbitral power-level of spin-wave input signal (reliable attenuator).
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75.30.Ds Spin waves
75.50.Bb Fe and its alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
75.70.Ak Magnetic properties of monolayers and thin films
75.75.-c Magnetic properties of nanostructures
78.47.D- Time resolved spectroscopy (>1 psec)
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