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26 Mar 2012

Volume 100, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 133701 (2012); http://dx.doi.org/10.1063/1.3696019 (3 pages)

Hewei Liu, Feng Chen, Qing Yang, Pubo Qu, Shengguan He, Xianhua Wang, Jinhai Si, and Xun Hou
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High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots

M. J. Milla, J. M. Ulloa, and A. Guzmán

Appl. Phys. Lett. 100, 131601 (2012); http://dx.doi.org/10.1063/1.3697992 (3 pages) | Cited 1 time

Online Publication Date: 27 March 2012

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The influence of the environment on the optical properties of self-assembled In0.5Ga0.5As surface quantum dots is studied as a function of different ambient conditions for sensing applications. Their room temperature photoluminescence (PL) quenches under vacuum and decreases strongly under dry O2 or N2 environments. Nevertheless, they have a strong signal at 1.55 μm in air or in a wet atmosphere. The presence of water molecules in the environment improves the PL intensity likely due to its polar character and therefore its easier adsorption by the surface dangling bonds, leading to a suppression of the non-radiative recombination centers.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
68.43.Mn Adsorption kinetics
68.47.Fg Semiconductor surfaces
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Design of strain-engineered quantum tunneling devices for topological surface states

L. Zhao, Junwei Liu, Peizhe Tang, and Wenhui Duan

Appl. Phys. Lett. 100, 131602 (2012); http://dx.doi.org/10.1063/1.3699023 (4 pages)

Online Publication Date: 30 March 2012

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Strain-dependent charge and spin transport on a topological insulator (TI) surface are investigated by combining first-principles calculations with quantum tunneling theory. It is shown that the Dirac point of helical surface states can be significantly shifted by applying compressive uniaxial strain. As an example of strain engineering applications based on this effect, a strain-induced quantum tunneling nanostructure is designed, where the tunneling conductance and the spin texture of surface states can be sensitively modulated by strain. Our work suggests that various local strain patterns can be integrated to manipulate surface states in all-TI-based spintronic nanodevices.
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73.20.At Surface states, band structure, electron density of states
73.40.Gk Tunneling
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