Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

Lien, Yu-Chung; Shieh, Jia-Min; Huang, Wen-Hsien; Tu, Cheng-Hui; Wang, Chieh; Shen, Chang-Hong; Dai, Bau-Tong; Pan, Ci-Ling; Hu, Chenming; Yang, Fu-Liang

doi:doi:10.1063/1.3700729

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Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)

Employing impedance spectroscopy, we have studied the hole density, conductivity, and mobility of poly(3-hexylthiophene), P3HT, doped with the strong molecular acceptor tetrafluorotetracyanoquinodimethane, F4TCNQ. We find that the hole density increases linearly with the F4TCNQ concentration. Furthermore, the hole mobility is decreased upon doping at low-to-medium doping level, which is rationalized by an analytic model of carrier mobility in doped organic semiconductors [V. I. Arkhipov, E. V. ...

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted e...

The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.

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KEYWORDS, PACS, and IPC

Keywords

annealing, deformation, diffusion, elemental semiconductors, laser materials processing, nanofabrication, nanostructured materials, recrystallisation, semiconductor quantum dots, semiconductor storage, silicon, tunnelling

PACS

84.30.Sk

Pulse and digital circuits
85.30.-z

Semiconductor devices

International Patent Classification (IPC)

B82B1/00
Nano-structures
B82B3/00
Manufacture or treatment of nano-structures
C21D1/26
Methods of annealing
G11C11/34
Using semiconductor devices
H01L27/10
Including a plurality of individual components in a repetitive configuration
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
H04N5/907
Using static stores, e.g. storage tubes, semiconductor memories

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3700729

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0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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