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2 Apr 2012

Volume 100, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 144101 (2012); http://dx.doi.org/10.1063/1.3697983 (4 pages)

H. Xu (徐涵), Wei Yu (余玮), M. Y. Yu (郁明阳), A. Y. Wong (黄燿煇), Z. M. Sheng (盛政明), M. Murakami (村上匡且), and J. Zhang (张杰)
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Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

Yu-Chung Lien, Jia-Min Shieh, Wen-Hsien Huang, Cheng-Hui Tu, Chieh Wang, Chang-Hong Shen, Bau-Tong Dai, Ci-Ling Pan, Chenming Hu, and Fu-Liang Yang

Appl. Phys. Lett. 100, 143501 (2012); http://dx.doi.org/10.1063/1.3700729 (4 pages) | Cited 3 times

Online Publication Date: 2 April 2012

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The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.
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84.30.Sk Pulse and digital circuits
85.30.-z Semiconductor devices

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Thanh Thuy Trinh, Van Duy Nguyen, Hong Hanh Nguyen, Jayapal Raja, Juyeon Jang, Kyungsoo Jang, Kyunghyun Baek, Vinh Ai Dao, and Junsin Yi

Appl. Phys. Lett. 100, 143502 (2012); http://dx.doi.org/10.1063/1.3699221 (4 pages)

Online Publication Date: 2 April 2012

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Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted erasing at −7 V for Schottky devices was obtained. Both memory devices using SiO2/SiOx/SiOxNy stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of ±13 V at an only programming duration of 1 ms.
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84.30.Sk Pulse and digital circuits

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Ze Yuan, Aneesh Nainani, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, and Krishna C. Saraswat

Appl. Phys. Lett. 100, 143503 (2012); http://dx.doi.org/10.1063/1.3699226 (4 pages) | Cited 2 times

Online Publication Date: 2 April 2012

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Performance degradation due to interfacial traps is generally considered as one of the main challenges for III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this work, we have investigated the suppression of interface state response using band engineering in III-V quantum well MOSFETs and experimentally verified the concept in the antimonide materials system using a gate-stack consisting of Al2O3/GaSb/InAlSb. It is shown that if the thickness of the interfacial layer of GaSb is scaled down to a few monolayers, the effective bandgap of the interfacial layer increases dramatically due to quantum confinement, which leads to the suppression of interface-trap response.
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85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

Myung Soo Lee, Sungho Choi, Chee-Hong An, and Hyoungsub Kim

Appl. Phys. Lett. 100, 143504 (2012); http://dx.doi.org/10.1063/1.3700728 (4 pages) | Cited 3 times

Online Publication Date: 3 April 2012

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Several rare earth elements (Gd, Dy, and Ce) having different valence numbers were doped into a solution-synthesized ZrO2 film, and the corresponding resistive memory characteristics were discussed in relation to the oxygen vacancies and film microstructure. Pure and trivalent ion-doped ZrO2 films showed forming-free behavior, probably because of the large amount of inherent and additional dopant-incurred oxygen vacancies, respectively. In contrast, tetravalent Ce ion doping caused the forming process to be required and afforded stable long-term switching characteristics with a relatively large memory window, which is attributed to the dopant-enhanced crystallization/densification effect without excessive oxygen vacancy generation.
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73.61.Ng Insulators
61.72.jd Vacancies
84.30.Sk Pulse and digital circuits
68.55.aj Insulators

Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

M. Anbarasu, Martin Wimmer, Gunnar Bruns, Martin Salinga, and Matthias Wuttig

Appl. Phys. Lett. 100, 143505 (2012); http://dx.doi.org/10.1063/1.3700743 (4 pages) | Cited 1 time

Online Publication Date: 3 April 2012

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Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe6 Ovonic threshold switching (OTS) device. The voltage dependence of the threshold switching process has been studied, revealing switching in less than 5 ns in the fastest case. A constant holding voltage is observed for the different voltage pulses applied, which is an indicative for a stable on state in the amorphous phase. In addition, the potential of GeTe6 devices as OTS selectors is validated.
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84.30.Sk Pulse and digital circuits

Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films

Ziyu Liu, Peijian Zhang, Yang Meng, Huanfang Tian, Jianqi Li, Xinyu Pan, Xuejin Liang, Dongmin Chen, and Hongwu Zhao

Appl. Phys. Lett. 100, 143506 (2012); http://dx.doi.org/10.1063/1.3700806 (4 pages)

Online Publication Date: 3 April 2012

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The influence of interfacial structure on the resistance switching behavior of Ta/Pr0.7Ca0.3MnO3/Pt films was investigated by varying the reactive Ta electrode thickness. Structure and component analyses revealed that a TaOx layer formed at the interface and its thickness increased with the Ta thickness in the thin region while staying the same in the thick region. The similar thickness dependences of the negative differential resistance and resistance switching characteristics were observed and interpreted by the TaOx thickness dependent oxidization and reduction reaction across the interfacial region. This study demonstrates that the resistance switching characteristics could be improved by suitable interfacial engineering.
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73.40.Rw Metal-insulator-metal structures
72.60.+g Mixed conductivity and conductivity transitions

Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

P. Marko, A. Alexewicz, O. Hilt, G. Meneghesso, E. Zanoni, J. Würfl, G. Strasser, and D. Pogany

Appl. Phys. Lett. 100, 143507 (2012); http://dx.doi.org/10.1063/1.3701164 (3 pages) | Cited 1 time

Online Publication Date: 3 April 2012

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Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward and reverse gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors. Measurements of RTS amplitude and mean pulse widths as a function of forward gate bias indicate that the RTS is due to modulation of current along an intrinsic or stress-induced percolation path across the AlGaN-barrier by electron capture and emission on a trap within the barrier. Processes of electron capture from GaN to trap and subsequent tunneling to metal gate or electron exchange between GaN channel and the trap are considered.
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85.30.Tv Field effect devices

In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor

Nobuyuki Ikarashi, Hiroshi Takeda, Koichi Yako, and Masami Hane

Appl. Phys. Lett. 100, 143508 (2012); http://dx.doi.org/10.1063/1.3700723 (3 pages)

Online Publication Date: 4 April 2012

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The response of the electrostatic potential distribution within a metal-oxide-semiconductor field-effect transistor (MOSFET) to an external electric field was revealed using electron holography cross-sectional in-situ observation while applying the gate voltage to a transistor scaled down to a 25-nm gate length. Charging effects due to electron irradiation were taken into account by using complementary numerical device simulation. Direct observation of the channel potential and its response to the gate voltage can be used to determine the gate electrode effective work-function for scaled MOSFETs.
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85.30.Tv Field effect devices

Enhancement-mode nanowire (nanobelt) field-effect-transistors with Schottky-contact source and drain electrodes

Bin Yu, Yu Ye, Peicai Wu, Yu Dai, Hui Zhang, and Lun Dai

Appl. Phys. Lett. 100, 143509 (2012); http://dx.doi.org/10.1063/1.3701276 (3 pages) | Cited 1 time

Online Publication Date: 5 April 2012

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Enhancement-mode (E-mode) field-effect-transistors (FETs) have advantages in making high-speed and low power consumption devices. However, most reported nano-FETs work in the depletion-mode, because E-mode nano-FETs are usually difficult to be implemented. We suggest a device structure, based on which high-performance E-mode nanowire (NW) or nanobelt based FETs can be reliably fabricated. In this device structure, both source and drain electrodes form Schottky contact with the NW, and a top gate is long enough to control the entire conductive channel. The working principle is discussed in detail. This device structure is universal to semiconductor materials and has diverse application prospects.
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85.30.Tv Field effect devices

Powerful surface-wave oscillators with two-dimensional periodic structures

N. S. Ginzburg, A. M. Malkin, A. S. Sergeev, and V. Yu. Zaslavsky

Appl. Phys. Lett. 100, 143510 (2012); http://dx.doi.org/10.1063/1.3701580 (4 pages) | Cited 1 time

Online Publication Date: 6 April 2012

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We propose planar relativistic surface-wave oscillators with two-dimensional periodic gratings. Additional transverse propagating waves emerging on these gratings synchronize the emission from the wide sheet rectilinear electron beam which allows realizing a Cherenkov millimeter wave oscillator with gigawatt output power.
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41.60.Bq Cherenkov radiation
42.79.Dj Gratings
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
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