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2 Apr 2012

Volume 100, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 100, 144101 (2012); http://dx.doi.org/10.1063/1.3697983 (4 pages)

H. Xu (徐涵), Wei Yu (余玮), M. Y. Yu (郁明阳), A. Y. Wong (黄燿煇), Z. M. Sheng (盛政明), M. Murakami (村上匡且), and J. Zhang (张杰)
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Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application

Hyunju Lee, Tomihisa Tachibana, Norihiro Ikeno, Hiroki Hashiguchi, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Toyohiro Chikyow, and Atsushi Ogura

Appl. Phys. Lett. 100, 143901 (2012); http://dx.doi.org/10.1063/1.3701280 (4 pages) | Cited 1 time

Online Publication Date: 5 April 2012

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We have investigated the effects of deposition temperature and post-annealing on the passivation performance of AlOx films deposited by O3-based atomic layer deposition for crystalline Si. We found that the dramatic enhancement in the passivation performance of room-temperature deposited AlOx films by post-annealing is due to the phase transformation of aluminum silicate to mullite in an AlOx interlayer and the resulting self-aligned AlOx/SiOx interface. This result is interesting for the fabrication of high-performance silicon solar cells with AlOx passivation layers.
Show PACS
88.40.H- Solar cells (photovoltaics)
61.72.Cc Kinetics of defect formation and annealing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation
68.55.ag Semiconductors
88.40.J- Types of solar cells
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