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9 Apr 2012

Volume 100, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 153701 (2012); http://dx.doi.org/10.1063/1.3700446 (3 pages)

Hsiao-lu D. Lee, Steffen J. Sahl, Matthew D. Lew, and W. E. Moerner
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Composite non-stick droplets and their actuation with electric field

Edward Bormashenko, Roman Pogreb, Revital Balter, Oleg Gendelman, and Doron Aurbach

Appl. Phys. Lett. 100, 151601 (2012); http://dx.doi.org/10.1063/1.3702568 (4 pages) | Cited 5 times

Online Publication Date: 9 April 2012

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Composite non-stick droplets comprised of di-iodomethane and water, coated by a common shell built from hydrophobic particles, are reported. Activation of the composite marbles by an electric field was studied. The water drop climbed onto the di-iodomethane drop when the composite marble was exposed to the electric field. A dimensionless constant describing sensitivity of dielectric droplets to an electric field is introduced. An explanation of the observed phenomena is proposed.
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77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
68.08.Bc Wetting

Surface/interface effect around a piezoelectric nano-particle in a polymer matrix under compressional waves

X. Q. Fang, Q. Yang, J. X. Liu, and W. J. Feng

Appl. Phys. Lett. 100, 151602 (2012); http://dx.doi.org/10.1063/1.3702780 (4 pages) | Cited 2 times

Online Publication Date: 10 April 2012

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In this letter, the scattering of plane harmonic compressional wave around a nanosized piezoelectric particle is studied. The surface/interface model of Gurtin and Murdoch [Arch. Ration. Mech. Anal. 57, 291 (1975)] is extended to the coupling of stress and electric displacement. The results show that the scattering effect of compressional waves is significantly related to the coupling effect of surface/interface. For incident waves with different frequencies, the influence of surface energy on the dynamic stress and electric displacement around the piezoelectric particle is discussed in details.
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62.30.+d Mechanical and elastic waves; vibrations
68.35.Md Surface thermodynamics, surface energies
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
77.84.Cg PZT ceramics and other titanates

In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace

Appl. Phys. Lett. 100, 151603 (2012); http://dx.doi.org/10.1063/1.3702885 (4 pages)

Online Publication Date: 10 April 2012

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The impact of using multiple cycles of trimethyl-aluminum (TMA) prior to Al2O3 deposition on the properties of (NH4)2S treated In0.53Ga0.47As and GaAs substrates was investigated by in situ x-ray photoelectron spectroscopy. Increasing the number of TMA cycles prior to Al2O3 atomic layer deposition (ALD) was seen to decrease the concentration of As-As detected at the oxide-semiconductor interface. The impact of annealing the (NH4)2S treated GaAs surface in situ prior to ALD, in various environments, was also investigated.
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81.65.-b Surface treatments
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.47.Fg Semiconductor surfaces
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Qualitative determination of surface roughness by in situ reflection high energy electron diffraction

J. E. Boschker and T. Tybell

Appl. Phys. Lett. 100, 151604 (2012); http://dx.doi.org/10.1063/1.3701610 (4 pages) | Cited 2 times

Online Publication Date: 10 April 2012

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We demonstrate that a qualitative measure of the surface roughness can be obtained by using in situ reflection high energy electron diffraction. The in situ measurements of the surface roughness are found to be in agreement with the topography, as determined by ex situ atomic force microscopy. Relying on this method, we study the surface roughening during pulsed laser deposition of La0.7Sr0.3MnO3 and investigate the quality of (001)-oriented SrTiO3 substrates with a TiO2 termination.
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68.35.bt Other materials
68.37.Ps Atomic force microscopy (AFM)
81.15.Fg Pulsed laser ablation deposition

Surface plasma wave excitation via laser irradiated overdense plasma foil

Pawan Kumar and V. K. Tripathi

Appl. Phys. Lett. 100, 151605 (2012); http://dx.doi.org/10.1063/1.3703592 (4 pages) | Cited 1 time

Online Publication Date: 11 April 2012

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A laser irradiated overdense plasma foil is seen to be susceptible to parametric excitation of surface plasma wave (SPW) and ion acoustic wave (IAW) on the ion plasma period time scale. The SPW is localised near the front surface of the foil while IAW extends upto the rear. The evanescent laser field and the SPW exert a ponderomotive force on electrons driving the IAW. The density perturbation associated with the latter beats with the laser induced oscillatory electron velocity to drive the SPW. At relativistic laser intensity, the growth rate is of the order of ion plasma frequency.
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52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.25.Fi Transport properties
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.27.Ny Relativistic plasmas
52.38.Kd Laser-plasma acceleration of electrons and ions
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Laser induced non-thermal deposition of ultrathin graphite

M. Reininghaus, D. Wortmann, J. Finger, O. Faley, R. Poprawe, and C. Stampfer

Appl. Phys. Lett. 100, 151606 (2012); http://dx.doi.org/10.1063/1.3703599 (3 pages) | Cited 2 times

Online Publication Date: 12 April 2012

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We present a laser induced ablation process to fabricate ultrathin graphitic flakes. By varying the fluence of the ablating pulsed fs-laser radiation, we identify distinct values for "thermal" evaporation and so-called "non-thermal" ablation of graphitic flakes. The presence of the non-thermal ablation is a direct consequence of the strong asymmetry of the bonding strength in normal and in-plane direction in layered materials, such as graphite. The experimentally extracted non-thermal ablation threshold for graphite of 250 mJ/cm2 agrees well with theoretical predictions. Finally, we deposited ultrathin graphitic flakes of 50 μm2 in size, which we characterize by Raman spectroscopy and scanning force microscopy.
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81.05.uf Graphite
81.15.Fg Pulsed laser ablation deposition
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.30.Hv Other nonmetallic inorganics
61.48.-c Structure of fullerenes and related hollow and planar molecular structures

Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

Luana Persano, Pompilio Del Carro, and Dario Pisignano

Appl. Phys. Lett. 100, 151607 (2012); http://dx.doi.org/10.1063/1.3701590 (4 pages) | Cited 1 time

Online Publication Date: 12 April 2012

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Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50°, is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can be exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.
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68.55.ag Semiconductors
81.15.Dj E-beam and hot filament evaporation deposition
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
68.03.Cd Surface tension and related phenomena
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Support effects on the atomic structure of ultrathin silica films on metals

Xin Yu, Bing Yang, Jorge Anibal Boscoboinik, Shamil Shaikhutdinov, and Hans-Joachim Freund

Appl. Phys. Lett. 100, 151608 (2012); http://dx.doi.org/10.1063/1.3703609 (4 pages) | Cited 9 times

Online Publication Date: 13 April 2012

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We studied the atomic structure of ultrathin silica films on Pt(111) in comparison with the previously studied films on Mo(112) and Ru(0001). The results obtained by scanning tunneling microscopy, photoelectron spectroscopy, and infrared reflection absorption spectroscopy suggest that the metal-oxygen bond strength plays the decisive role in the atomic structure of the silica overlayers on metal substrates. Metals with high oxygen adsorption energy favor the formation of the crystalline monolayer SiO2.5 films, whereas noble metals form primarily vitreous SiO2 bilayer films. The metals with intermediate energies may form either of the structures or both coexisting. In the systems studied, the lattice mismatch plays only a minor role.
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68.55.aj Insulators
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics
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