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16 Apr 2012

Volume 100, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 164101 (2012); http://dx.doi.org/10.1063/1.3702579 (4 pages)

Cheol-Ho Yun, Leslie Y. Yeo, James R. Friend, and Bernard Yan
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Tunable thermal rectification in graphene nanoribbons through defect engineering: A molecular dynamics study

Yan Wang, Siyu Chen, and Xiulin Ruan

Appl. Phys. Lett. 100, 163101 (2012); http://dx.doi.org/10.1063/1.3703756 (3 pages) | Cited 3 times

Online Publication Date: 16 April 2012

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Using non-equilibrium molecular dynamics, we show that asymmetrically defected graphene nanoribbons (GNR) are promising thermal rectifiers. The optimum conditions for thermal rectification (TR) include low temperature, high temperature bias, ∼1% concentration of single-vacancy or substitutional silicon defects, and a moderate partition of the pristine and defected regions. TR ratio of ∼80% is found in a 14-nm long and 4-nm wide GNR at a temperature of 200 K and bias of 90 K, where heat conduction is in the ballistic regime since the bulk effective phonon mean-free-path is around 775 nm. As the GNR length increases towards the diffusive regime, the TR ratio decreases and eventually stabilizes at a length-independent value of about 3%–5%. This work extends defect engineering to 2D materials for achieving TR.
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66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.
66.30.Lw Diffusion of other defects
61.72.jd Vacancies
61.48.Gh Structure of graphene
63.22.Rc Phonons in graphene

Chiral tunneling in trilayer graphene

S. Bala Kumar and Jing Guo

Appl. Phys. Lett. 100, 163102 (2012); http://dx.doi.org/10.1063/1.3703758 (4 pages) | Cited 7 times

Online Publication Date: 16 April 2012

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We study the effect of chiral-tunneling in Bernal and rhombohedral stacked trilayer-graphene (3LG). Based on the chirality of the electronic bands, at the K-point, (rhombohedral) Bernal-3LG exhibits 100% (50%) transparency across a heterojunction. Utilizing this property, we further investigate the effect of electron collimation in 3LG. Due to the difference in the Berry’s phase, we show that, rhombohedral-3LG is a better electron collimator, compared to monolayer and Bernal-bilayer graphene. Since, Bernal-3LG can be decomposed into two separate channels consisting of a monolayer and a modified Bernal-bilayer graphene; the Bernal-3LG is weaker electron collimator, compared to rhombohedral-3LG.
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73.40.Gk Tunneling
73.22.Pr Electronic structure of graphene
73.63.-b Electronic transport in nanoscale materials and structures
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

A core/shell mechanism for stacking-fault generation in GaAs nanowires

Zaoshi Yuan, Ken-ichi Nomura, and Aiichiro Nakano

Appl. Phys. Lett. 100, 163103 (2012); http://dx.doi.org/10.1063/1.3703765 (3 pages)

Online Publication Date: 16 April 2012

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Generation of stacking faults (SFs) during the growth of nanowires (NWs) is a major concern for the efficiency of NW-based devices such as solar cells. Here, molecular-dynamics simulation of a [111]-oriented gallium arsenide NW reveals an atomistic mechanism of SF generation. Spatial distribution of the adatom energy on the (111)B top surface exhibits a core/shell structure due to the contraction of atomic bonds at the sidewall surfaces, where SFs are preferentially nucleated in the shell. A nucleation growth model incorporating the core/shell mechanism suggests a size and growth-condition controlled approach for SF-free growth of NWs.
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81.07.Gf Nanowires
61.72.Nn Stacking faults and other planar or extended defects
81.05.Ea III-V semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
68.65.La Quantum wires (patterned in quantum wells)
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Imaging of subatomic electron cloud interactions: Effect of higher harmonics processing in noncontact atomic force microscopy

C. Alan Wright and Santiago D. Solares

Appl. Phys. Lett. 100, 163104 (2012); http://dx.doi.org/10.1063/1.3703767 (4 pages) | Cited 1 time

Online Publication Date: 16 April 2012

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In a previous study of higher harmonics atomic force microscopy imaging of graphite using a tungsten tip [Hembacher et al., Science 305, 380 (2004)], the authors interpreted the observed subatomic features as the signature of tip apex electron bonding lobes. We explore here their higher harmonics processing and filtering methods. We do not find any imaging artifacts inherent to the filtering process, but we find that the harmonics averaging approach used is not appropriate due to non-uniform harmonics ratios across the surface. A promising alternative may be the individual mapping of the first two harmonics.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)

Electrothermal phenomena in zinc oxide nanowires and contacts

Saniya LeBlanc, Sujay Phadke, Takashi Kodama, Alberto Salleo, and Kenneth E. Goodson

Appl. Phys. Lett. 100, 163105 (2012); http://dx.doi.org/10.1063/1.4703935 (5 pages) | Cited 1 time

Online Publication Date: 16 April 2012

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Heat generation along nanowires and near their electrical contacts influences the feasibility of energy conversion devices. This work presents ZnO nanowire electrical resistivity data and models electrothermal transport accounting for heat generation at metal-semiconductor contacts, axial thermal conduction, and substrate heat losses. The current-voltage relationships and electron microscopy indicate that sample degradation is caused by the interplay of heat generation at contacts and within the nanowire volume. The model is used to interpret literature data for Si, GaN, and ZnO nanowires. This work assists with electrothermal nanowire measurements and highlights practical implications of utilizing solution-synthesized nanowires.
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73.40.Ns Metal-nonmetal contacts
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Growth of triangle-shape graphene on Cu(111) surface

Xiu Chen, Shuyi Liu, Lacheng Liu, Xiaoqing Liu, Xiaoming Liu, and Li Wang

Appl. Phys. Lett. 100, 163106 (2012); http://dx.doi.org/10.1063/1.4704149 (3 pages) | Cited 4 times

Online Publication Date: 17 April 2012

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Triangle-shape graphene has been grown on Cu(111) surface by thermal decomposition of 1,1′-ferrocenedicarboxylic acid molecules in an ultrahigh vacuum chamber. The observations of Moiré patterns and honeycomb structure unambiguously reveal that such triangle-shape graphene is a single-crystalline one-layer domain with zigzag edge structure. Graphene islands can extend up to 17 nm until the growth process is hindered by the edges of the atomic terraces.
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81.05.ue Graphene
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.48.Gh Structure of graphene

Visualization of hybridization states with atomic resolution using electron energy loss spectroscopy mapping

M. Haruta, K. Kurashima, T. Nagai, H. Komatsu, Y. Shimakawa, H. Kurata, and K. Kimoto

Appl. Phys. Lett. 100, 163107 (2012); http://dx.doi.org/10.1063/1.4704558 (4 pages) | Cited 2 times

Online Publication Date: 17 April 2012

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Hybridization state mapping with atomic resolution was demonstrated using electron energy loss spectroscopy combined with scanning transmission electron microscopy. The O 2p states hybridized with Sn 5s and Cu 3d in a layered double perovskite La2CuSnO6 were individually distinguished by significant contrast differences in the oxygen K-edge energy-loss near-edge structure. The anisotropic oxygen intensity in the distorted CuO6 octahedron resulting from the Jahn-Teller effect could also be observed. The localized Cu 3d hole in the bc plane was indirectly imaged in real space using two-dimensional oxygen mapping.
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79.20.Uv Electron energy loss spectroscopy
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Critical dimensions of highly lattice mismatched semiconductor nanowires grown in strain-releasing configurations

Suzana Sburlan, P. Daniel Dapkus, and Aiichiro Nakano

Appl. Phys. Lett. 100, 163108 (2012); http://dx.doi.org/10.1063/1.4704565 (3 pages) | Cited 1 time

Online Publication Date: 17 April 2012

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Growing large defect-free semiconductor nanowires (NW) on lattice-mismatched substrates is important for solar cell applications. Here, we evaluate the critical dimensions of NWs in several strain-releasing growth configurations of interest to experimentalists. We quantify the expected increase in NW volume that may be grown coherently for NWs stacked on lattice mismatched pillars and embedded quantum dot (QD) layers, compared to NWs grown on simple substrates. We also calculate the variations in strain energy for NWs positioned off-axis from embedded QDs, as may occur during fabrication. We predict significant increases in coherent NW volume allowing greater absorption efficiency in solar cells.
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81.07.Gf Nanowires
81.05.Ea III-V semiconductors
81.07.Vb Quantum wires
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Electrically controllable energy gaps in graphene quantum dots

Wen-Long Ma and Shu-Shen Li

Appl. Phys. Lett. 100, 163109 (2012); http://dx.doi.org/10.1063/1.4704918 (4 pages) | Cited 2 times

Online Publication Date: 17 April 2012

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We theoretically demonstrate that the energy gaps of graphene quantum dots (GQDs) can be easily tuned by applying opposite electrostatic potentials to the two equally divided parts of them. This control of energy gaps by such an external electrostatic potential can be realized in various sizes or shapes of GQDs. We propose that the physical origin of the gap tunability is the delicate coupling between the two parts of GQDs with opposite electrostatic gate potentials. Our findings are quite useful for the application of GQDs to the electronic devices and photovoltaic devices.
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71.20.Tx Fullerenes and related materials; intercalation compounds
73.61.Wp Fullerenes and related materials
73.63.Kv Quantum dots
73.21.La Quantum dots
73.22.Pr Electronic structure of graphene
61.48.Gh Structure of graphene

Dynamic nanomechanics of zinc oxide nanowires

Lifen Wang, Xuezeng Tian, Shize Yang, Zhi Xu, Wenlong Wang, and Xuedong Bai

Appl. Phys. Lett. 100, 163110 (2012); http://dx.doi.org/10.1063/1.4704919 (3 pages)

Online Publication Date: 17 April 2012

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The electromechanical resonances of individual zinc oxide nanowires were induced by alternative current (ac) signals inside a transmission electron micrcrope, which have been used to measure the mechanical quality factors (Q) and elastic bending moduli (E) of a single zinc oxide (ZnO) nanowire. The resonance amplitudes were tuned by the applied ac voltages. The results indicate that Q drops as much as ∼80% with increasing resonance amplitudes, while E slightly decreases (∼3%). The mechanism of the amplitude-dependent mechanical properties is discussed. This study on dynamic nanomechanics of ZnO nanowires is significant for their cantilever-based applications.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
77.65.Fs Electromechanical resonance; quartz resonators
62.20.de Elastic moduli
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Direct mapping of plasmonic coupling between a triangular gold island pair

Weizhe Chen, Andrei Kirilyuk, Alexey Kimel, and Theo Rasing

Appl. Phys. Lett. 100, 163111 (2012); http://dx.doi.org/10.1063/1.3700725 (4 pages) | Cited 2 times

Online Publication Date: 18 April 2012

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Local plasmonic coupling between a triangular gold island pair is observed with high spatial resolution (∼10 nm) by an apertureless scanning near-field optical microscope. The measured local field distribution is fully reproduced by three dimensional numerical simulations. Our results show a strong near-field coupling between two adjacent gold triangles, which gives direct evidence to the local field enhancement in plasmonic nanoantenna effect.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Quantum spin holography with surface state electrons

Oleg O. Brovko and Valeri S. Stepanyuk

Appl. Phys. Lett. 100, 163112 (2012); http://dx.doi.org/10.1063/1.4704181 (4 pages)

Online Publication Date: 18 April 2012

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In a recent paper, Moon et al. [Nat. Nanotechnol. 4, 167 (2009)] have shown that the single-atom limit for information storage density can be overcome by using the coherence of electrons in a two-dimensional electron gas to produce quantum holograms comprised of individually manipulated molecules projecting an electronic pattern onto a portion of a surface. We propose to further extend the concept by introducing quantum spin holography—a version of quantum holographic encoding allowing to store the information in two spin channels independently.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
03.67.-a Quantum information

Internal structure of tunable ternary CdSexS1−x quantum dots unraveled by x-ray absorption spectroscopy

Liang-Yih Chen (陳良益), Po-An Yang (楊普安), Chia-Hong Tseng (曾家泓), Bing-Joe Hwang (黃炳照), and Ching-Hsiang Chen (陳景翔)

Appl. Phys. Lett. 100, 163113 (2012); http://dx.doi.org/10.1063/1.3703123 (3 pages)

Online Publication Date: 18 April 2012

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CdSexS1−x quantum dots (QDs) were synthesized by a simple one-injection non-coordinate solvent method. The composition distribution of Se and S and the internal structures of the CdSexS1−x QDs can be tuned by the Se/S molar ratio. To investigate the internal structure of CdSexS1−x QD, x-ray absorption spectroscopy was used to examine the distribution of Se and S inside CdSexS1−x QDs.
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81.07.Ta Quantum dots
78.67.Hc Quantum dots
81.05.Hd Other semiconductors
78.55.Hx Other solid inorganic materials
78.70.Dm X-ray absorption spectra

Detection of sulfur dioxide gas with graphene field effect transistor

Yujie Ren, Chaofu Zhu, Weiwei Cai, Huifeng Li, Hengxing Ji, Iskandar Kholmanov, Yaping Wu, Richard D. Piner, and Rodney S. Ruoff

Appl. Phys. Lett. 100, 163114 (2012); http://dx.doi.org/10.1063/1.4704803 (4 pages) | Cited 3 times

Online Publication Date: 18 April 2012

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Graphene grown by chemical vapor deposition on a Cu foil and transferred onto a Si wafer has been used to fabricate a field effect transistor device that was used to study the sensing of SO2 gas. It was found by in-situ measurements that the SO2 strongly p-dopes the graphene and dramatically shifts its Dirac point. This effect was used to monitor the SO2 gas. The detector can be completely reset by thermal annealing at 100 °C in high vacuum. The response and recovery of the detector are faster at higher temperatures. Moreover, the sensitivity of the SO2 graphene detector increases proportionally with increasing temperature.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices

Unipolar transport in bilayer graphene controlled by multiple p-n interfaces

Hisao Miyazaki, Song-Lin Li, Shu Nakaharai, and Kazuhito Tsukagoshi

Appl. Phys. Lett. 100, 163115 (2012); http://dx.doi.org/10.1063/1.3701592 (4 pages) | Cited 3 times

Online Publication Date: 19 April 2012

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Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band gap is generated by applying a perpendicular electric field to the bilayer graphene, and the ON state is induced by the p-p or n-n configurations of the junctions. As the number of the junction increases, current suppression in the OFF state is pronounced. The multiple p-n junctions also realize the saturation of the drain current under relatively high source-drain voltages.
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85.30.Tv Field effect devices

Gate-dependent photoconductivity of single layer graphene grafted with metalloporphyrin molecules

M. S. Choi, D. J. Lee, S. J. Lee, D. H. Hwang, J. H. Lee, N. Aoki, Y. Ochiai, H.-J. Kim, D. Whang, S. Kim, and S. W. Hwang

Appl. Phys. Lett. 100, 163116 (2012); http://dx.doi.org/10.1063/1.4704921 (4 pages)

Online Publication Date: 19 April 2012

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We present the gate-dependent photoconductivity measurements of single layer graphene ribbons grafted with zinc porphyrin molecules Zn(OEP). The Zn(OEP)-graphene showed a maximum 610% increase in its photo-sensitivity compared to the bare graphene samples. Furthermore, the measured photocurrent exhibited strong dependence on the gate bias, light power, and light wavelength. These dependences showed clear evidence of the excitation of the carriers in Zn(OEP) and their energy transfer to graphene.
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72.40.+w Photoconduction and photovoltaic effects

Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

A. Marchand, A. El Hdiy, M. Troyon, G. Amiard, A. Ronda, and I. Berbezier

Appl. Phys. Lett. 100, 163117 (2012); http://dx.doi.org/10.1063/1.4705299 (4 pages)

Online Publication Date: 19 April 2012

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Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped 〈001〉 silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope—tip in contact mode at a fixed position away from the beam spot of about 0.5 µm. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
73.63.Bd Nanocrystalline materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Fe Electron and positron radiation effects
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Observation of dual magnonic and phononic bandgaps in bi-component nanostructured crystals

V. L. Zhang, F. S. Ma, H. H. Pan, C. S. Lin, H. S. Lim, S. C. Ng, M. H. Kuok, S. Jain, and A. O. Adeyeye

Appl. Phys. Lett. 100, 163118 (2012); http://dx.doi.org/10.1063/1.4705301 (4 pages) | Cited 3 times

Online Publication Date: 19 April 2012

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We report on the experimental observation of dual magnonic and phononic bandgaps in bi-component nanostructured crystals. The dispersion relations of linear periodic arrays of alternating Fe (or Ni) and Ni80Fe20 nanostripes on a SiO2/Si substrate, mapped by Brillouin spectroscopy, feature distinct bandgaps. Calculations of the magnon and phonon dispersions yield good agreement with experiments. No magnon-phonon interaction is detected for the modes observed, making the structures studied a potential platform for the separate and simultaneous processing of information carried by hypersonic magnons and phonons, with no undesirable cross-talk between them.
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81.05.Bx Metals, semimetals, and alloys
81.07.Bc Nanocrystalline materials
78.35.+c Brillouin and Rayleigh scattering; other light scattering
75.30.Ds Spin waves
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

High photocurrent from planar strips of vertical and horizontal aligned multi wall carbon nanotubes

M. Passacantando, V. Grossi, and S. Santucci

Appl. Phys. Lett. 100, 163119 (2012); http://dx.doi.org/10.1063/1.4704569 (4 pages) | Cited 1 time

Online Publication Date: 20 April 2012

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We report on a significant photocurrent generation from a planar device made by growing simultaneously different strips of vertically and horizontally aligned multi-wall carbon nanotubes, obtained under white light and different wavelengths in the visible region. We show that the photocurrent of all strips increases with decreasing the strip length and, the highest photoconversion is found to be in the blue-shift visible region. This significant photocurrent generation at lower wavelengths is directly related to the absorbance properties of multi-wall carbon nanotubes and a Raman spectroscopy study confirms that the most part of innermost tubes have a semiconducting nature.
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73.63.Fg Nanotubes
78.30.Na Fullerenes and related materials
78.67.Ch Nanotubes
81.07.De Nanotubes
61.46.Fg Nanotubes
72.40.+w Photoconduction and photovoltaic effects

Self-passivation of transparent single-walled carbon nanotube films on plastic substrates by microwave-induced rapid nanowelding

Joong Tark Han, Daeho Kim, Jun Suk Kim, Seung Kwon Seol, Seung Yol Jeong, Hee Jin Jeong, Won Suk Chang, Geon-Woong Lee, and Sunshin Jung

Appl. Phys. Lett. 100, 163120 (2012); http://dx.doi.org/10.1063/1.4704666 (4 pages) | Cited 1 time

Online Publication Date: 20 April 2012

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We developed a straightforward method for enhancing the environmental stability of transparent single-walled carbon nanotube (SWCNT) network films on plastic substrates using a rapid microwave heating to produce SWCNT film–substrate nanowelding without any chemicals. The selective heating of SWCNTs induced by microwave irradiation leads to embedding the SWCNTs in the substrate, even within 10 s, without distortion of the substrate. The SWCNTs-embedded surface of the substrate played the role of a self-passivation layer that protected the SWCNTs from water molecules. The sheet resistance values of the nanowelded films had not increased more than 10%.
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81.65.Rv Passivation
81.40.Gh Other heat and thermomechanical treatments

Snake states and Klein tunneling in a graphene Hall bar with a pn-junction

M. Barbier, G. Papp, and F. M. Peeters

Appl. Phys. Lett. 100, 163121 (2012); http://dx.doi.org/10.1063/1.4704667 (3 pages) | Cited 1 time

Online Publication Date: 20 April 2012

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The Hall (RH) and bend (RB) resistances of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction—dividing the Hall bar geometry in two regions—leads to two distinct regimes exhibiting very different physics: (1) both regions are of n-type and (2) one region is n-type and the other p-type. In regime (1), a “Hall plateau”—an enhancement of the resistance—appears for RH. On the other hand, in regime (2), we found a negative RH, which approaches zero for large B. The bend resistance is highly asymmetric in regime (2) and the resistance increases with increasing magnetic field B in one direction while it reduces to zero in the other direction.
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72.80.Vp Electronic transport in graphene
81.05.ue Graphene
73.23.Ad Ballistic transport
73.40.Gk Tunneling
73.43.-f Quantum Hall effects
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