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16 Apr 2012

Volume 100, Issue 16, Articles (16xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 164101 (2012); http://dx.doi.org/10.1063/1.3702579 (4 pages)

Cheol-Ho Yun, Leslie Y. Yeo, James R. Friend, and Bernard Yan
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Quadratic electro-optic effect in GaN-based materials

P. Chen, D. G. Zhao, Y. H. Zuo, D. S. Jiang, Z. S. Liu, and Q. M. Wang

Appl. Phys. Lett. 100, 161901 (2012); http://dx.doi.org/10.1063/1.3703759 (4 pages)

Online Publication Date: 16 April 2012

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The mechanism and influence of quadratic electro-optic effect in GaN-based materials is investigated. It is found that the peaks appearing in the measured electro-optic signal strongly depend on the modulation frequency of external electric field, which is attributed to the vibration frequency resonance effect. The intrinsic vibration frequency of the investigated samples is estimated to be around 21.95 kHz and is assigned to be the base frequency of the resonance.
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78.20.Jq Electro-optical effects
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Strong second-harmonic generation in silicon nitride films

Tingyin Ning, Henna Pietarinen, Outi Hyvärinen, Janne Simonen, Goëry Genty, and Martti Kauranen

Appl. Phys. Lett. 100, 161902 (2012); http://dx.doi.org/10.1063/1.4704159 (4 pages) | Cited 7 times

Online Publication Date: 17 April 2012

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We observe strong second-harmonic generation from silicon nitride films prepared on fused silica substrates by plasma enhanced chemical vapor deposition. The components of the second-order nonlinear optical susceptibility tensor of the films are calibrated against quartz crystal. The dominant component has the magnitude of 2.5 pm/V, almost two orders of magnitude larger than reported for Si3N4, and about three times larger than for the traditional nonlinear crystal of potassium dihydrogen phosphate. The results indicate that silicon nitride has great potential for second-order nonlinear optical devices, especially in on-chip nanophotonics.
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78.66.Nk Insulators
68.55.aj Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Opto-electric particle manipulation on a bismuth silicon oxide crystal

Michael Esseling, Stefan Glasener, Federico Volonteri, and Cornelia Denz

Appl. Phys. Lett. 100, 161903 (2012); http://dx.doi.org/10.1063/1.4704361 (4 pages) | Cited 3 times

Online Publication Date: 17 April 2012

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High-throughput manipulation of microparticles can be efficiently accomplished using electrokinetic effects. In this contribution, we demonstrate the two-dimensional investigation of internal space-charge fields inside a bismuth silicon oxide (BSO) crystal and their use for optically mediated particle trapping. The magnitude of the internal fields as well as the time constant for its build-up are measured by Zernike phase contrast and digital holography. The fast response time of a BSO crystal at very low light powers enables real-time generation of high electric field gradients. We demonstrate that this photoconductive material facilitates both electrophoretic and dielectrophoretic trapping of particles on an accessible surface.
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78.20.Jq Electro-optical effects
77.22.Jp Dielectric breakdown and space-charge effects
82.45.-h Electrochemistry and electrophoresis
78.56.-a Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects

Diffraction resonance with strong optical-field enhancement from gain-assisted hybrid plasmonic structure

Haixi Zhang, Haifei Lu, Ho-Pui Ho, Yanyan Zhou, Xia Yu, and Feng Luan

Appl. Phys. Lett. 100, 161904 (2012); http://dx.doi.org/10.1063/1.4704360 (4 pages)

Online Publication Date: 18 April 2012

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We propose and analyze the diffraction coupling of localized plasmon resonances (LPRs) through gain-assisted propagation surface plasmons (PSPs). The coupling process involves localization of incident light by LPR and LPR-PSP interaction. We demonstrate a significantly strong enhancement of electromagnetic power for LPRs in the event of diffraction resonance through incorporation of experimentally feasible optical gain to the PSP. Based on such phenomenon, we propose a hybrid plasmonic structure, which would potentially give rise to device realization of the nano-lasers. In addition, it is also a promising platform for applications such as surface enhanced Raman scattering, nonlinear optics, plasmonic trapping, etc.
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73.22.Lp Collective excitations

Phase and thickness dependent modulus of Ge2Sb2Te5 films down to 25 nm thickness

Yoonjin Won, Jaeho Lee, Mehdi Asheghi, Thomas W. Kenny, and Kenneth E. Goodson

Appl. Phys. Lett. 100, 161905 (2012); http://dx.doi.org/10.1063/1.3699227 (4 pages) | Cited 2 times

Online Publication Date: 18 April 2012

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The mechanical properties of phase-change materials including Ge2Sb2Te5 (GST) are strongly influenced by the complex interaction of phase and imperfection distributions, especially at film thicknesses relevant for phase-change memory devices. This work uses a micromechanical resonator as a substrate to study the phase dependent modulus of GST films with thicknesses from 25 nm to 350 nm. The moduli of amorphous GST and crystalline GST films increase with decreasing thickness to 10 GPa and up to 60 GPa, respectively. The phase purity is studied using X-ray diffraction and energy dissipation data, which provide qualitative information about inelastic absorption.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
68.55.jd Thickness
61.43.Er Other amorphous solids

Origin of preferential grain orientation in excimer laser-induced crystallization of silicon thin films

M. Weizman, C. Klimm, N. H. Nickel, and B. Rech

Appl. Phys. Lett. 100, 161906 (2012); http://dx.doi.org/10.1063/1.4704559 (3 pages) | Cited 1 time

Online Publication Date: 19 April 2012

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The origin of the formation of {100} and {111} grain textures in polycrystalline silicon thin films prepared with multiple excimer laser shots at the super-lateral-growth crystallization regime is investigated in this study. Our results demonstrate that the type of texture formed is determined solely by the thickness of the silicon layer. At a critical value of 40 nm, a transition from {100} to {111} texture is observed with increasing layer thickness. It is therefore proposed that below this critical value, the texture formation is governed by surface energy anisotropy whereas above it, the kinetics of the solidification process predominate.
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61.72.-y Defects and impurities in crystals; microstructure
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
68.35.Md Surface thermodynamics, surface energies
64.70.dg Crystallization of specific substances
68.55.jm Texture

Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN

Y. S. Sun, Y. F. Guo, X. X. Wang, Y. Tsujimoto, Y. Matsushita, Y. G. Shi, C. Wang, A. A. Belik, and K. Yamaura

Appl. Phys. Lett. 100, 161907 (2012); http://dx.doi.org/10.1063/1.4704664 (4 pages) | Cited 4 times

Online Publication Date: 19 April 2012

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A resistive-switching phenomenon driven by antiferromagnetic phase separation is observed for a manganese nitride Mn3ZnN, which crystallizes in the antiperovskite structure. Measurements of the lattice parameters, magnetic susceptibility, electrical resistivity, and specific heat from 2 K to 300 K reveal antiferromagnetic phase separation that appears below a temperature of approximately 190 K. The mechanism of the phase separation is highly complicated; nevertheless the accompanying resistive-switching phenomenon is useful for non-volatile memory applications.
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72.60.+g Mixed conductivity and conductivity transitions
75.30.Cr Saturation moments and magnetic susceptibilities
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.50.Ee Antiferromagnetics
61.66.Fn Inorganic compounds
65.40.Ba Heat capacity
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Photo-origami—Bending and folding polymers with light

Jennie Ryu, Matteo D’Amato, Xiaodong Cui, Kevin N. Long, H. Jerry Qi, and Martin L. Dunn

Appl. Phys. Lett. 100, 161908 (2012); http://dx.doi.org/10.1063/1.3700719 (5 pages) | Cited 10 times

Online Publication Date: 20 April 2012

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Photo-origami uses the dynamic control of the molecular architecture of a polymer by a combination of mechanical and non-contact optical stimuli to design and program spatially and temporally variable mechanical and optical fields into a material. The fields are essentially actuators, embedded in the material at molecular resolution, designed to enable controllable, sequenced, macroscopic bending and folding to create three-dimensional material structures. Here, we demonstrate, through a combination of theory, simulation-based design, synthesis, and experiment, the operative phenomena and capabilities of photo-origami that highlight its potential as a powerful, and potentially manufacturable, approach to create three-dimensional material structures.
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81.40.Lm Deformation, plasticity, and creep
61.41.+e Polymers, elastomers, and plastics
62.20.fg Shape-memory effect; yield stress; superelasticity
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