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Applied Physics Letters / Volume 100 / Issue 17 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 173109 (2012); http://dx.doi.org/10.1063/1.4707377 (4 pages)

Planar PbS quantum dot/C60 heterojunction photovoltaic devices with 5.2% power conversion efficiency

E. J. D. Klem, C. W. Gregory, G. B. Cunningham, S. Hall, D. S. Temple, and J. S. Lewis

RTI International, Research Triangle Park, North Carolina 27709, USA

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(Received 18 January 2012; accepted 7 April 2012; published online 25 April 2012)

Of interest for both photovoltaic and photodetector applications is the ability of colloidal quantum dot (CQD) devices to provide response further into the infrared than is typical for other solution-processable materials. Here, we present a simple heterojunction diode structure that utilizes the extended infrared absorption of PbS CQDs. We show that device performance benefits from a discontinuous exciton blocking layer which improves charge separation without limiting charge extraction. By enhancing charge carrier mobility in the CQD layer, we demonstrate a planar heterostructure device with a power conversion efficiency of 5.2% under 1 sun illumination.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

carrier mobility, colloids, fullerene devices, IV-VI semiconductors, photovoltaic cells, semiconductor quantum dots

PACS

  • 85.60.Bt

    Optoelectronic device characterization, design, and modeling

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

  • 85.65.+h

    Molecular electronic devices

  • 78.67.Hc

    Quantum dots

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • H01L27/14

    Including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

  • H01L27/142

    Energy conversion devices

  • H01L31/00

    Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

  • H01L31/04

    Adapted as conversion devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.4707377

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

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