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23 Apr 2012

Volume 100, Issue 17, Articles (17xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 171903 (2012); http://dx.doi.org/10.1063/1.4704193 (3 pages)

Y. Peng and K. Kempa
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Electrical properties of the amorphous interfacial layer between Al electrodes and epitaxial NiO films

Jae Hyuck Jang, Ji-Hwan Kwon, Seung Ran Lee, Kookrin Char, and Miyoung Kim

Appl. Phys. Lett. 100, 172101 (2012); http://dx.doi.org/10.1063/1.4704917 (3 pages)

Online Publication Date: 23 April 2012

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The amorphous interfacial layer (a-IL) between Al electrode and epitaxial NiO films were studied using electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy. Two distinct properties were found in the a-IL, i.e., a lower metallic and an upper insulating layer. EELS results revealed that the metallic Ni atoms were responsible for the conducting nature of the lower oxide amorphous layer. The resistance behavior of Al/a-IL/epi-NiO was changed from a high to a low resistance state after forming process. The resistance change could be explained by the formation of a nanocrystalline metal alloy in the insulating amorphous layer.
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73.40.Ns Metal-nonmetal contacts
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
79.20.Uv Electron energy loss spectroscopy

Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics

H. Chouaib and C. Bru-Chevallier

Appl. Phys. Lett. 100, 172102 (2012); http://dx.doi.org/10.1063/1.4705408 (4 pages)

Online Publication Date: 24 April 2012

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Micro-photoreflectance (micro-PR) is performed on patterned type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor to locally measure the built-in electric fields. The results show that the efficiency of the electric field modulation correlates with the ideality factor extracted from the electrical characteristics (Gummel characteristics). The Franz-Keldysh oscillations (FKO) completely disappear at the emitter/base heterojunction on devices with high ideality factor (nearly 2), whereas typical FKO spectra are seen on samples with ideality factor ∼1. Such behavior is attributed to the type II recombination across the InGaAlAs/GaAsSb interface which can reduce the photovoltage effect. Prior to the micro-PR experiments, photoluminescence is performed to demonstrate that the InGaAlAs/GaAsSb interface nature is of type II as well as to estimate the band offset discontinuity ΔEC.
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85.30.Pq Bipolar transistors
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Negative electron mobility in diamond

J. Isberg, M. Gabrysch, S. Majdi, and D. J. Twitchen

Appl. Phys. Lett. 100, 172103 (2012); http://dx.doi.org/10.1063/1.4705434 (4 pages) | Cited 2 times

Online Publication Date: 24 April 2012

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By measuring the drift velocity of electrons in diamond as a function of applied electric field, we demonstrate that ultra-pure diamond exhibits negative differential electron mobility in the [100] direction below 140 K. Negative electron mobility is normally associated with III–V or II–VI semiconductors with an energy difference between different conduction band valleys. The observation of negative mobility in diamond, an elemental group IV semiconductor, is explained in terms of repopulation effects between different equivalent conduction band valleys using a model based on the Boltzmann equation.
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72.20.Fr Low-field transport and mobility; piezoresistance
71.20.Tx Fullerenes and related materials; intercalation compounds
81.05.ug Diamond
72.80.Cw Elemental semiconductors

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, and T. Schenkel

Appl. Phys. Lett. 100, 172104 (2012); http://dx.doi.org/10.1063/1.4704561 (4 pages) | Cited 7 times

Online Publication Date: 24 April 2012

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We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (Bpp = 12μT) and long spin coherence times (T2 = 0.7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
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72.20.My Galvanomagnetic and other magnetotransport effects
76.30.Lh Other ions and impurities
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
66.30.J- Diffusion of impurities
61.72.Cc Kinetics of defect formation and annealing

Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

H. Wang, F. Wu, S. Byrappa, S. Sun, B. Raghothamachar, M. Dudley, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Mueller, and M. J. Loboda

Appl. Phys. Lett. 100, 172105 (2012); http://dx.doi.org/10.1063/1.4704679 (4 pages)

Online Publication Date: 24 April 2012

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Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and threading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read source mechanism.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
72.20.Ee Mobility edges; hopping transport
72.80.Jc Other crystalline inorganic semiconductors

Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique

N. S. Bennett and N. E. B. Cowern

Appl. Phys. Lett. 100, 172106 (2012); http://dx.doi.org/10.1063/1.4705293 (4 pages) | Cited 1 time

Online Publication Date: 24 April 2012

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In this coming decade, complementary metal-oxide-semiconductor microelectronic devices may undergo a major change with the implementation of germanium channels. Likewise, the performance of photovoltaic cells based on elemental semiconductors will continue to be optimized. Both technologies will rely on a detailed and thorough understanding of electrical properties, and here, precise doping characterization will play a key role. The differential Hall technique combines resistivity and Hall-effect measurements with successive surface layer removal, allowing one to measure independent carrier concentration and mobility depth profiles. In this Letter, we apply the technique for both microelectronic- and photovoltaic-relevant doping structures in germanium. Controllable and uniform layer removal is achieved with tailored depth resolution (<1–20 nm) for a range of doping structures (30–600 nm).
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85.40.Ry Impurity doping, diffusion and ion implantation technology
85.60.Bt Optoelectronic device characterization, design, and modeling

Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, and Masanobu Miyao

Appl. Phys. Lett. 100, 172107 (2012); http://dx.doi.org/10.1063/1.4705733 (5 pages) | Cited 4 times

Online Publication Date: 25 April 2012

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Hybrid-integration of (111), (110), and (100) Ge-on-insulator (GOI) on an Si chip is essential to merge III-V semiconductor optical-devices as well as high-speed Ge transistors onto Si-large-scale integrated-circuits. We clarify important-parameters to control Ni-metal-induced lateral crystallization and Al-induced layer-exchange crystallization. This achieves artificial (110) and (111) Si micro-seed on insulating-film. Together with Si substrate as (100) Si seed, multi-crystal-seeds with different orientations are aligned on a Si chip. Then, SiGe-mixing triggered rapid-melting-growth of amorphous-Ge is examined from these multi-crystal-seeds. This enables simultaneous Ge lateral-crystallization with (111), (110), and (100) orientations. High-quality, hybrid-orientation GOIs without defects are demonstrated on Si platform.
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68.55.ag Semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Optical and structural studies of homoepitaxially grown m-plane GaN

S. Khromov, B. Monemar, V. Avrutin, Xing Li, H. Morkoç, L. Hultman, and G. Pozina

Appl. Phys. Lett. 100, 172108 (2012); http://dx.doi.org/10.1063/1.4706258 (4 pages)

Online Publication Date: 25 April 2012

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Cathodoluminescence (CL) and transmission electron microscopy studies of homoepitaxially grown m-plane Mg-doped GaN layers are reported. Layers contain basal plane and prismatic stacking faults (SFs) with ∼106 cm−1 density. Broad emission peaks commonly ascribed to SFs were found to be insignificant in these samples. A set of quite strong, sharp lines were detected in the same spectral region of 3.36–3.42 eV. The observed peaks are tentatively explained as excitons bound to some impurity defects, which can also be related to SFs. Donor-acceptor pair (DAP) recombination involving Si or O and Mg was ruled out by fitting DAP energies and CL mapping.
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78.66.Fd III-V semiconductors
61.72.Nn Stacking faults and other planar or extended defects
71.55.Eq III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Libing Li, Jungwoo Joh, J. A. del Alamo, and Carl V. Thompson

Appl. Phys. Lett. 100, 172109 (2012); http://dx.doi.org/10.1063/1.4707163 (3 pages) | Cited 1 time

Online Publication Date: 25 April 2012

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The two-dimensional spatial distribution of structural degradation of AlGaN/GaN high electron mobility transistors was investigated under high-power electrical stressing using atomic force and scanning electron microscopy. It was found that pits form on the surface of the GaN cap layer at the edges of the gate fingers in the middle of the device. The average pit area and density increase gradually from the edge to the center of the fingers and are more common along inner fingers than fingers. It was also found that pit formation and growth are thermally activated.
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85.30.Tv Field effect devices

Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

T. D. Lin (林宗達), Y. H. Chang (張宇行), C. A. Lin (林俊安), M. L. Huang (黃懋霖), W. C. Lee (李威縉), J. Kwo (郭瑞年), and M. Hong (洪銘輝)

Appl. Phys. Lett. 100, 172110 (2012); http://dx.doi.org/10.1063/1.4706261 (4 pages) | Cited 4 times

Online Publication Date: 26 April 2012

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High κ dielectric of HfAlO/HfO2 was an in-situ atomic-layer-deposited directly on molecular beam epitaxy grown In0.53Ga0.47As surface without using pre-treatments or interfacial passivation layers, where HfAlO (HfO2:Al2O3 ∼ 4:1) with high re-crystallization temperature was employed as the top oxide layer. The HfAlO (∼4.5 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As metal oxide semiconductor capacitors have exhibited an oxide/In0.53Ga0.47As interface free of arsenic-related defective bonding, thermodynamic stability at 800 °C, and low leakage current densities of <10−7 A/cm2 at ±1 MV/cm. The interfacial trap density (Dit) spectra in absence of mid-gap peaks were obtained by temperature-dependent capacitance and conductance with Dit’s of 2–3 × 1012 eV−1 cm−2 below and 6–12 × 1011 eV−1 cm−2 above the mid-gap of In0.53Ga0.47As, respectively. An equivalent oxide thickness of less than 1 nm has been achieved by reducing the HfAlO thickness to ∼2.7 nm with the same initial HfO2 thickness of ∼0.8 nm.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.Px Epitaxial and superlattice films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Two-photon excitation in an intermediate band solar cell structure

Nazmul Ahsan, Naoya Miyashita, Muhammad Monirul Islam, Kin Man Yu, Wladek Walukiewicz, and Yoshitaka Okada

Appl. Phys. Lett. 100, 172111 (2012); http://dx.doi.org/10.1063/1.4709405 (4 pages) | Cited 11 times

Online Publication Date: 27 April 2012

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We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an n-GaNAs intermediate band layer sandwiched between a p-AlGaAs emitter and an n-AlGaAs barrier layer with suitable doping level to block electron escaping from the intermediate band to the bottom n-GaAs substrate. Multi-band transitions observed in two-photon excitation experiments are explained using photo-modulated reflectance spectrum, and further support for intermediate band solar cell operation of this structure is given by current-voltage measurements.
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88.40.jm Thin film III-V and II-VI based solar cells
88.40.H- Solar cells (photovoltaics)
72.40.+w Photoconduction and photovoltaic effects

High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

X. Luo, Y. S. Oh, A. Sirenko, P. Gao, T. A. Tyson, K. Char, and S.-W. Cheong

Appl. Phys. Lett. 100, 172112 (2012); http://dx.doi.org/10.1063/1.4709415 (5 pages) | Cited 4 times

Online Publication Date: 27 April 2012

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We discovered that perovskite (Ba,La)SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of ∼8-10 × 1019 cm−3 is found to be ∼103 cm2 V−1 s−1 at room temperature, and the precise measurement of the band gap Δ of a BaSnO3 crystal shows Δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.
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72.20.Ee Mobility edges; hopping transport
72.20.My Galvanomagnetic and other magnetotransport effects
71.20.Ps Other inorganic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

F. Hartmann, F. Langer, D. Bisping, A. Musterer, S. Höfling, M. Kamp, A. Forchel, and L. Worschech

Appl. Phys. Lett. 100, 172113 (2012); http://dx.doi.org/10.1063/1.4709421 (3 pages)

Online Publication Date: 27 April 2012

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Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched Ga0.89In0.11N0.04As0.96 absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the AlGaAs tunnel barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 μm wavelength leads to a pronounced photo-effect with a sensitivities of around 103 A/W.
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85.30.Kk Junction diodes
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