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30 Apr 2012

Volume 100, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 181901 (2012); http://dx.doi.org/10.1063/1.4705414 (4 pages)

Etienne Brasselet, Arnaud Royon, and Lionel Canioni
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Ultra-low-phase-noise cryocooled microwave dielectric-sapphire-resonator oscillators

John G. Hartnett, Nitin R. Nand, and Chuan Lu

Appl. Phys. Lett. 100, 183501 (2012); http://dx.doi.org/10.1063/1.4709479 (4 pages) | Cited 4 times

Online Publication Date: 30 April 2012

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Two nominally identical ultra-stable microwave oscillators are compared. Each incorporates a sapphire resonator cooled to near 6 K in an ultra-low vibration cryostat using a pulse-tube cryocooler. The phase noise for a single oscillator is measured at −105 dBc/Hz at 1 Hz offset on the 11.2 GHz carrier. The oscillator fractional frequency stability, after subtracting a linear frequency drift of 3.5×10-14/day, is characterized by 5.3×10-16τ-1/2+9×10-17 for integration times 0.1s<τ<1000s and is limited by a flicker frequency noise floor near 1×10-16.
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84.30.Ng Oscillators, pulse generators, and function generators
84.40.-x Radiowave and microwave (including millimeter wave) technology
84.40.Az Waveguides, transmission lines, striplines
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Quantum point contact with large subband energy spacings

Y. J. Um, Y. H. Oh, M. Seo, S. Lee, Y. Chung, N. Kim, V. Umansky, and D. Mahalu

Appl. Phys. Lett. 100, 183502 (2012); http://dx.doi.org/10.1063/1.4710522 (3 pages) | Cited 1 time

Online Publication Date: 3 May 2012

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Quantum point contact (QPC) with an extra metallic gate in between the split gates of a conventional QPC was fabricated and studied. Clear conductance quantization was observed at 4.2 K when a proper positive voltage was set to the middle gate of the QPC. The maximum energy spacing between the ground and the first exited state of the QPC was around 7 meV which is at least a few times larger than that of conventional QPCs. Using same approach, a possibility of making a relatively clean and long 1D wire has been tested.
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73.23.-b Electronic transport in mesoscopic systems
73.40.-c Electronic transport in interface structures

The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

Ji Sim Jung, Sang-Ho Rha, Un Ki Kim, Yoon Jang Chung, Yoon Soo Jung, Jung-Hae Choi, and Cheol Seong Hwang

Appl. Phys. Lett. 100, 183503 (2012); http://dx.doi.org/10.1063/1.4711202 (4 pages) | Cited 1 time

Online Publication Date: 3 May 2012

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The charge trapping characteristics of 30-nm-thick Si3N4 and 3-nm-thick Al2O3 layers between amorphous In-Ga-Zn-O thin films and 100-nm-thick blocking oxides made of thermal SiO2 were examined. The Si3N4 layer showed several discrete trap levels with relatively low density, while the Al2O3 layer showed a higher trap density with continuous distribution for electron trapping. When no tunneling oxide was adopted, the trapped carriers were easily detrapped, even at room temperature. Adoption of a 6-nm-thick SiO2 tunneling layer grown by atomic layer deposition largely improved the retention of the trapped charges and retained ∼60% of the trapped charges even after 10 000 s.
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68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Gk Tunneling
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