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30 Apr 2012

Volume 100, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 181901 (2012); http://dx.doi.org/10.1063/1.4705414 (4 pages)

Etienne Brasselet, Arnaud Royon, and Lionel Canioni
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Large area Co nanoring arrays fabricated on silicon substrate by anodic aluminum oxide template-assisted electrodeposition

Y. L. Li, S. L Tang, W. B. Xia, L. Y. Chen, Y. Wang, T. Tang, and Y. W. Du

Appl. Phys. Lett. 100, 183101 (2012); http://dx.doi.org/10.1063/1.4709482 (4 pages) | Cited 1 time

Online Publication Date: 30 April 2012

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A simple approach based on anodic aluminum oxide template-assisted electrodeposition was developed to fabricate large-area Co nanoring arrays on silicon substrate. The ring outer diameter and interspace can be modulated by varying the anodization parameters. Magnetic measurements and micromagnetic simulation revealed that the onion to vortex (O-V) transition is strongly diameter dependent. With increasing the outer diameter from 100 nm to 300 nm, the O-V switching field gradually changes from positive value to negative value. This was also proved by in situ observation of the magnetic states of the rings under different external fields using magnetic force microscope.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.15.Pq Electrodeposition, electroplating
81.65.Mq Oxidation
82.45.Qr Electrodeposition and electrodissolution
75.75.Cd Fabrication of magnetic nanostructures

Effect of charge-transfer complex on the energy level alignment between graphene and organic molecules

Giyeol Bae, Hyun Jung, Noejung Park, Jinwoo Park, Suklyun Hong, and Wanjun Park

Appl. Phys. Lett. 100, 183102 (2012); http://dx.doi.org/10.1063/1.4709428 (4 pages) | Cited 1 time

Online Publication Date: 1 May 2012

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We performed density-functional theory calculations to study the electronic structures at the interfaces between graphene and organic molecules that have been used in organic light-emitting diodes. In terms of work function, graphene itself is not favorable as either anode or cathode for commonly used electron or hole transport molecular species. However, the formation of charge transfer complex on the chemically inert sp2 carbon surface can provide a particular advantage. Unlike metal surfaces, the graphene surface remains non-bonded to electron-accepting molecules even after electron transfer, inducing an improved Fermi-level alignment with the highest-occupied-molecular-orbital level of the hole-injecting-layer molecules.
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85.60.Jb Light-emitting devices
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Subwavelength nanopatterning of photochromic diarylethene films

Precious Cantu, Nicole Brimhall, Trisha L. Andrew, Rossella Castagna, Chiara Bertarelli, and Rajesh Menon

Appl. Phys. Lett. 100, 183103 (2012); http://dx.doi.org/10.1063/1.4710547 (3 pages)

Online Publication Date: 1 May 2012

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The resolution of optical patterning is constrained by the far-field diffraction limit. In this letter, we describe an approach that exploits the unique photo- and electro-chemistry of diarylethene photochromic molecules to overcome this diffraction limit and achieve sub-wavelength nanopatterning.
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82.50.-m Photochemistry
68.55.-a Thin film structure and morphology
78.20.-e Optical properties of bulk materials and thin films
78.66.Qn Polymers; organic compounds
81.16.Rf Micro- and nanoscale pattern formation
82.45.-h Electrochemistry and electrophoresis

Fabrication of white light-emitting diodes based on solvothermally synthesized copper indium sulfide quantum dots as color converters

Woo-Seuk Song and Heesun Yang

Appl. Phys. Lett. 100, 183104 (2012); http://dx.doi.org/10.1063/1.4711019 (4 pages) | Cited 8 times

Online Publication Date: 1 May 2012

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A facile, large-scalable solvothermal synthesis of copper indium sulfide (CIS) quantum dots (QDs) and their application to the fabrication of QD-based white light-emitting diodes (LEDs) are reported. Depending on CIS QD growth time of 2 versus 5 h, the core/shell structured QDs of CIS/ZnS exhibit tunable emissions of yellow-orange with excellent quantum yields of 55%-91%. A white QD-LED is realized by applying CIS (2 h)/ZnS QD as a blue-to-yellow color converter. Furthermore, a white QD-LED having a blend of yellow and orange QDs is fabricated to improve a color rendering property through spectral extension, and its electroluminescent properties are evaluated.
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85.60.Jb Light-emitting devices

Cascaded plasmon resonant field enhancement in nanoparticle dimers in the point dipole limit

Seyfollah Toroghi and Pieter G. Kik

Appl. Phys. Lett. 100, 183105 (2012); http://dx.doi.org/10.1063/1.4707159 (4 pages) | Cited 3 times

Online Publication Date: 2 May 2012

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Cascaded field enhancement in silver dimer nanostructures is investigated using a dipole-dipole interaction model. Field enhancement spectra are evaluated as a function of the particle size difference and inter-particle spacing. We observe three distinct regimes of cascaded field enhancement: hindered cascading, multiplicative cascading, and the ultimate cascading limit, depending on the dimer interaction strength. Multiplicative cascading at small inter-particle spacing leads to analytic expressions for the ultimate internal and external field enhancement factors. For silver dimers in a host with index 1.5, we obtain a maximum internal field enhancement of 2.9 × 103, a factor of 75 larger than that of an isolated silver nanoparticle.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci, Carlo de Falco, Marcelo I. Guzman, Sara Lee, and Tomonori Honda

Appl. Phys. Lett. 100, 183106 (2012); http://dx.doi.org/10.1063/1.4709483 (4 pages) | Cited 1 time

Online Publication Date: 3 May 2012

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The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.
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68.43.Mn Adsorption kinetics
77.22.Jp Dielectric breakdown and space-charge effects

Transmission of electron through monolayer graphene laser barrier

C. Sinha and R. Biswas

Appl. Phys. Lett. 100, 183107 (2012); http://dx.doi.org/10.1063/1.4710525 (5 pages) | Cited 2 times

Online Publication Date: 3 May 2012

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The present theoretical model deals with the transmission property of the Dirac fermions in the Floquet sidebands for the laser radiated graphene nanostructure. The laser assisted structure behaves as a tunneling barrier that leads to asymmetric transmission around the normal to the interface and is capable to confine the massless Dirac particles in a monolayer graphene strip. The absence of the Klein tunneling and the presence of a large number of controlling parameters would make the time dependent vector potential barrier superior over the electrostatic and magnetic barriers towards the opto-electronic device fabrication.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
71.10.Fd Lattice fermion models (Hubbard model, etc.)

Exceptional high Seebeck coefficient and gas-flow-induced voltage in multilayer graphene

Xuemei Li, Jun Yin, Jianxin Zhou, Qin Wang, and Wanlin Guo

Appl. Phys. Lett. 100, 183108 (2012); http://dx.doi.org/10.1063/1.4707417 (4 pages) | Cited 2 times

Online Publication Date: 3 May 2012

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Seebeck coefficient of graphene is an important parameter for defining its thermoelectric performance and thus practical applications, such as gas-flow-induced voltage. Here, we find a unique layer-dependence of the graphene Seebeck coefficient that exceptionally increases with increasing thickness to reach a peak value at six layers that is ∼77% higher than monolayer and ∼296% higher than graphite, unlike the monotonic decrease in electric resistance. However, the gas flow-induced voltage is significantly higher in 2, 4, 5, 6, and 7 layered graphene samples than in 1, 3, and 8 layered ones, against the prevailing wisdom that it should be proportional to Seebeck coefficient.
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72.80.Vp Electronic transport in graphene
73.61.Wp Fullerenes and related materials
72.20.Pa Thermoelectric and thermomagnetic effects

Li-doped BC3 sheet for high-capacity hydrogen storage

Zailin Yang and Jun Ni

Appl. Phys. Lett. 100, 183109 (2012); http://dx.doi.org/10.1063/1.4711038 (4 pages) | Cited 1 time

Online Publication Date: 4 May 2012

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Hydrogen storage on Li-doped BC3 sheet is studied by the first principles calculations. The Li atoms can be strongly adsorbed on the BC3 sheet without clustering. For one Li atom adsorbed on the (2 × 2) BC3 supercell, each Li atom could adsorb four hydrogen molecules. By adsorbing Li atoms on both sides of BC3 sheet to form the (1 × 1) pattern, the hydrogen capacity of 10.11 wt. % can be achieved and adsorption energy of each hydrogen molecule is in the range of 0.22–0.34 eV. The Li-doped BC3 sheet is the favorable candidate material for the reversible hydrogen adsorption and desorption at near ambient conditions.
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88.30.R- Hydrogen storage
68.43.Mn Adsorption kinetics
68.43.Nr Desorption kinetics

Nonlinear phonon transport and ballistic thermal rectification in asymmetric graphene-based three terminal junctions

Zhong-Xiang Xie, Ke-Min Li, Li-Ming Tang, Chang-Ning Pan, and Ke-Qiu Chen

Appl. Phys. Lett. 100, 183110 (2012); http://dx.doi.org/10.1063/1.4711204 (4 pages) | Cited 3 times

Online Publication Date: 4 May 2012

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By using the nonequilibrium Green’s function and the Landauer transport theory, nonlinear phonon properties in asymmetric graphene-based three terminal junctions (AGTTJs) are investigated. Results show that AGTTJs exhibit pronounced nonlinear thermal rectifying behaviors, and the efficiency is efficiently tuned by increasing the asymmetric degree between the left and right terminals or modulating the central probe. The thermal rectifying mechanism is analytically explained by the schematic diagram. It is suggested that AGTTJs may be served as a good ballistic thermal rectifier.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.23.Ad Ballistic transport
73.40.Ei Rectification

Single mode phonon scattering at carbon nanotube-graphene junction in pillared graphene structure

Jonghoon Lee, Vikas Varshney, Joshua S. Brown, Ajit K. Roy, and Barry L. Farmer

Appl. Phys. Lett. 100, 183111 (2012); http://dx.doi.org/10.1063/1.4711206 (4 pages) | Cited 1 time

Online Publication Date: 4 May 2012

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Phonon scattering at the carbon nanotube-graphene interface is studied in the pillared graphene structure, using the phonon wave packet method. Qualitatively different scattering characteristics, compared to previous studies of carbon nanotube systems, are observed. The phonon group velocity, dictating the energy transmission in simple carbon nanotube systems, is found to play an insignificant role. Distributing the incoming phonon energy to both sides of the interface more or less equally, the graphene interface provides a strong diffusive scattering site, which features a microscopic understanding of the decisive role of junction on the thermal transport in the pillared graphene hierarchical structure.
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63.22.Gh Nanotubes and nanowires
63.22.Rc Phonons in graphene
61.46.Fg Nanotubes
61.48.Gh Structure of graphene

Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

Shriram Shivaraman, Lihong H. Herman, Farhan Rana, Jiwoong Park, and Michael G. Spencer

Appl. Phys. Lett. 100, 183112 (2012); http://dx.doi.org/10.1063/1.4711769 (4 pages) | Cited 1 time

Online Publication Date: 4 May 2012

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In this work, we study electron transport across the heterojunction interface of epitaxial few-layer graphene grown on silicon carbide and the underlying substrate. The observed Schottky barrier is characterized using current-voltage, capacitance-voltage and photocurrent spectroscopy techniques. It is found that the graphene/SiC heterojunction cannot be characterized by a single unique barrier height because of lateral barrier inhomogeneities. A Gaussian distribution of barrier heights with a mean barrier height φBm = 1.06eV and standard deviation σ = 137±11meV explains the experimental data quite well.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Jv Interfaces; heterostructures; nanostructures
68.55.ap Fullerenes
72.40.+w Photoconduction and photovoltaic effects
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