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30 Apr 2012

Volume 100, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 181901 (2012); http://dx.doi.org/10.1063/1.4705414 (4 pages)

Etienne Brasselet, Arnaud Royon, and Lionel Canioni
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Ripple formation on a nickel electrode during a glow discharge in a solution

Genki Saito, Sou Hosokai, Masakatsu Tsubota, and Tomohiro Akiyama

Appl. Phys. Lett. 100, 181601 (2012); http://dx.doi.org/10.1063/1.4709491 (4 pages)

Online Publication Date: 30 April 2012

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We investigated ripple formation on a nickel electrode during a glow discharge in a solution. A nickel wire was partially melted to produce nanoparticles during glow discharge electrolysis. When the electrolysis time was over 30 min, a ripple pattern was formed on the electrode surface, and particle size increased. In this study, we investigated the relationship between the ripple formation and crystal orientation of the electrode. As a result, the ripple patterns were formed on all planes, except (111)- and (100)-oriented planes; their direction was [001].
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82.45.Fk Electrodes
82.45.Hk Electrolysis
82.45.Yz Nanostructured materials in electrochemistry
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.-c Methods of micro- and nanofabrication and processing

Band bending and surface defects in β-Ga2O3

T. C. Lovejoy, Renyu Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, and M. A. Olmstead

Appl. Phys. Lett. 100, 181602 (2012); http://dx.doi.org/10.1063/1.4711014 (4 pages) | Cited 1 time

Online Publication Date: 2 May 2012

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Surface band bending and surface defects on the UV-transparent conducting oxide β-Ga2O3 (100) are studied with hard x-ray photoemission spectroscopy and scanning tunneling microscopy. Highly doped β-Ga2O3 shows flat bands near the surface, while the bands on nominally undoped (but still n-type), air-cleaved β-Ga2O3 are bent upwards by ≳0.5 eV. Negatively charged surface defects are observed on vacuum annealed β-Ga2O3, which also shows upward band bending. Density functional calculations show oxygen vacancies are not likely to be ionized in the bulk, but could be activated by surface band bending. The large band bending may also hinder formation of ohmic contacts.
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81.40.Lm Deformation, plasticity, and creep
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.72.jd Vacancies
62.20.F- Deformation and plasticity
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

R. Kudrawiec, M. Gladysiewicz, L. Janicki, J. Misiewicz, G. Cywinski, C. Chèze, P. Wolny, P. Prystawko, and C. Skierbiszewski

Appl. Phys. Lett. 100, 181603 (2012); http://dx.doi.org/10.1063/1.4707386 (4 pages) | Cited 3 times

Online Publication Date: 2 May 2012

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Contactless electroreflectance (CER) has been applied to study the Fermi-level position on c-plane GaN surface in Van Hoof structures grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). A clear CER resonance followed by strong Franz-Keldysh oscillation (FKO) of various periods was clearly observed for the series of samples of different thicknesses (30, 50, and 70 nm) of undoped GaN layer. The built-in electric field in this layer has been determined from the period of GaN-related FKO. A good agreement between the calculated and measured electric fields has been found for the Fermi-level located ∼0.4 and ∼0.3 eV below the conduction band for the MBE and MOVPE samples, respectively.
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78.20.Jq Electro-optical effects
73.20.At Surface states, band structure, electron density of states
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.20.Nr Semiconductor compounds

Viable thermionic emission from graphene-covered metals

E. Starodub, N. C. Bartelt, and K. F. McCarty

Appl. Phys. Lett. 100, 181604 (2012); http://dx.doi.org/10.1063/1.4711212 (4 pages) | Cited 1 time

Online Publication Date: 2 May 2012

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Thermionic emission from monolayer graphene grown on representative transition metals, Ir and Ru, is characterized by low-energy electron microscopy. Work functions were determined from the temperature dependence of the emission current and from the electron energy spectrum of emitted electrons. The high-temperature work function of the strongly interacting system graphene/Ru(0001) is sufficiently low, 3.3 ± 0.1 eV, to have technological potential for large-area emitters that are spatially uniform, efficient, and chemically inert. The thermionic work functions of the less strongly interacting system graphene/Ir(111) are over 1 eV larger and vary substantially (0.4 eV) between graphene orientations rotated by 30°.
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79.40.+z Thermionic emission
73.30.+y Surface double layers, Schottky barriers, and work functions
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