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7 May 2012

Volume 100, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 100, 191901 (2012); http://dx.doi.org/10.1063/1.4709436 (4 pages)

Muamer Kadic, Tiemo Bückmann, Nicolas Stenger, Michael Thiel, and Martin Wegener
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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, and B. M. Armstrong

Appl. Phys. Lett. 100, 192101 (2012); http://dx.doi.org/10.1063/1.4712564 (3 pages)

Online Publication Date: 8 May 2012

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In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300  °C, all phases of nickel and germanium convert to nickel mono-germanide (NiGe). However, higher RTA temperatures are also found to cause agglomeration of the NiGe phase and higher leakage current. So, the optimum temperature for Schottky-based source/drain contact formation on n-Ge is ∼300 °C, where the nickel mono-germanide phase is formed but without phase agglomeration.
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73.30.+y Surface double layers, Schottky barriers, and work functions
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Flexible thin-film InAs/GaAs quantum dot solar cells

Katsuaki Tanabe, Katsuyuki Watanabe, and Yasuhiko Arakawa

Appl. Phys. Lett. 100, 192102 (2012); http://dx.doi.org/10.1063/1.4712597 (4 pages) | Cited 2 times

Online Publication Date: 8 May 2012

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Thin-film InAs/GaAs quantum dot (QD) solar cells on mechanically flexible plastic films are fabricated. A 4.1-μm-thick compound semiconductor photovoltaic layer grown on a GaAs substrate is transferred onto a plastic film through a low-temperature bonding technique. We also fabricate thin-film InAs/GaAs quantum dot solar cells on Si substrates, as alternative low-cost, lightweight, robust substrates. The open-circuit voltages of the thin-film cells on plastic and Si substrates are equal to that of the as-grown bulk cell on a GaAs substrate, indicating that no material degradation occurs during our bond-and-transfer process.
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88.40.H- Solar cells (photovoltaics)

Raman analysis of monoclinic Cu2SnS3 thin films

Dominik M. Berg, Rabie Djemour, Levent Gütay, Susanne Siebentritt, Phillip J. Dale, Xavier Fontane, Victor Izquierdo-Roca, and Alejandro Pérez-Rodriguez

Appl. Phys. Lett. 100, 192103 (2012); http://dx.doi.org/10.1063/1.4712623 (4 pages) | Cited 5 times

Online Publication Date: 8 May 2012

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Secondary phases like Cu2SnS3 are major obstacles for kesterite thin film solar cell applications. We prepare Cu2SnS3 using identical annealing conditions as used for the kesterite films. By x-ray diffraction, the crystal structure of Cu2SnS3 was identified as monoclinic. Polarization-dependent Raman investigations allowed the identification of the dominant peaks at 290 cm−1 and 352 cm−1 with the main A′ symmetry vibrational modes from the monoclinic Cu2SnS3 phase. Furthermore, micro-resolved Raman investigations revealed local variations in the spectra that are attributed to a secondary phase (possibly Cu2Sn3S7). This exemplifies the abilities of micro-resolved Raman measurements in the detection of secondary phases.
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78.66.Li Other semiconductors
68.55.ag Semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.30.Hv Other nonmetallic inorganics

Millimeter wave transmission spectroscopy of gated two-dimensional hole systems

K. Stone, R. R. Du, M. J. Manfra, L. N. Pfeiffer, and K. W. West

Appl. Phys. Lett. 100, 192104 (2012); http://dx.doi.org/10.1063/1.4711772 (3 pages)

Online Publication Date: 8 May 2012

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We developed a differential transmission to study cyclotron resonance of GaAs/AlxGa1−xAs two-dimensional hole samples. The technique utilizes a modulated AuPd gate isolated by a Si3 N4 dielectric from the sample, which is irradiated opposite the gate by millimeter waves ranging from 2 to 40 GHz. This technique effectively removes the background signal and yields a hole effective mass of 0.41me with a cyclotron scattering time of ∼20 ps, consistent with the previous results using different techniques.
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76.40.+b Diamagnetic and cyclotron resonances
78.70.Gq Microwave and radio-frequency interactions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Spin-polarized two-dimensional electron gas in undoped MgxZn1−xO/ZnO heterostructures

K. Han, N. Tang, J. D. Ye, J. X. Duan, Y. C. Liu, K. L. Teo, and B. Shen

Appl. Phys. Lett. 100, 192105 (2012); http://dx.doi.org/10.1063/1.4711775 (4 pages) | Cited 1 time

Online Publication Date: 8 May 2012

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Quantum transport properties of two-dimensional electron gas (2DEG) in undoped MgxZn1−xO/ZnO heterostructures grown by metal organic vapor phase epitaxy have been investigated. A large zero-field spin-splitting energy more than 15 meV in the 2DEG is determined at 1.6 K. Meanwhile, ferromagnetism is observed in the heterostructures. The findings reveal that the 2DEG is spin polarized at zero magnetic fields. It is believed that the exchange interaction between the itinerant electrons in the two-dimensional channel and the magnetic polarons in the MgxZn1−xO barrier around the interface results in the spin polarization of the 2DEG.
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81.05.Dz II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
72.25.Dc Spin polarized transport in semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.50.Pp Magnetic semiconductors

Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

F. Herzog, M. Bichler, G. Koblmüller, S. Prabhu-Gaunkar, W. Zhou, and M. Grayson

Appl. Phys. Lett. 100, 192106 (2012); http://dx.doi.org/10.1063/1.4711783 (5 pages)

Online Publication Date: 8 May 2012

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We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures TG > 690 °C and low As4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic force and transmission electron microscopy as well as x-ray diffraction. Mirror-smooth and defect-free AlAs with pronounced step-flow morphology was further achieved by growth on 2° misoriented GaAs (111)B toward [0math1] and [2mathmath] orientations. Successful fabrication of modulation-doped AlAs QW structures on these misoriented substrates yielded record electron mobilities (at 1.15 K) in excess of 13 000 cm2/Vs at sheet carrier densities of 5 × 1011 cm−2.
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68.55.ag Semiconductors
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.63.Hs Quantum wells
81.05.Ea III-V semiconductors
81.07.St Quantum wells

High-power 2.0 µm semiconductor disk laser—Influence of lateral lasing

Tino Töpper, Marcel Rattunde, Sebastian Kaspar, Rüdiger Moser, Christian Manz, Klaus Köhler, and Joachim Wagner

Appl. Phys. Lett. 100, 192107 (2012); http://dx.doi.org/10.1063/1.4714512 (3 pages) | Cited 1 time

Online Publication Date: 9 May 2012

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The influence of lateral lasing on the high-power performance of 2 µm GaSb-based optically pumped semiconductor disk laser (SDL) has been investigated. The maximum cw output power of the SDL exceeded 4.1 W at 20 °C heat sink temperature. The occurrence of lateral lasing was observed by recording the emission spectrum and the emitted optical power in the in-plane direction of the SDL chip. We investigated the conditions for which lateral lasing occurs and demonstrate an effective means to suppress this unwanted phenomenon even for small SDL chip sizes comparable to the pump spot diameter.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors

E. Wendler and L. Wendler

Appl. Phys. Lett. 100, 192108 (2012); http://dx.doi.org/10.1063/1.4711810 (4 pages) | Cited 1 time

Online Publication Date: 9 May 2012

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In this letter, the cross section of damage formation per individual ion is measured for III-V compound semiconductors ion implanted at 15 K, applying Rutherford backscattering spectrometry. An empirical model is proposed that explains the measured cross sections in terms of quantities representing the primary energies deposited in the displacement of lattice atoms and in electronic interactions. The resulting formula allows the prediction of damage formation for low temperatures and low ion fluences in these materials and can be taken as a starting point for further quantitative modeling of damage formation including secondary effects such as temperature and ion flux.
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61.82.Fk Semiconductors
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
61.80.Jh Ion radiation effects

High fraction of substitutional phosphorus in a (100) diamond epilayer with low surface roughness

M.-A. Pinault-Thaury, B. Berini, I. Stenger, E. Chikoidze, A. Lusson, F. Jomard, J. Chevallier, and J. Barjon

Appl. Phys. Lett. 100, 192109 (2012); http://dx.doi.org/10.1063/1.4712617 (4 pages) | Cited 1 time

Online Publication Date: 10 May 2012

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For high power electronics, diamond is a promising semiconductor with phosphorus being the current substitutional donor. However, up to now, in (100) oriented grown diamond, only a small fraction of phosphorus atoms is incorporated in substitutional sites (<30%) and the epilayer surface exhibits macrosteps. In this work, we present a (100) phosphorus-doped diamond epilayer where ∼100% of the phosphorus atoms are incorporated in substitutional sites. The film exhibits a low surface roughness (RMS = 0.5 nm). Our epilayer is conductive (ρ = 5.0 × 106 Ω · cm at 300 K) and neutral phosphorus are detected in infrared absorption.
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68.35.bg Semiconductors
73.61.Cw Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
78.66.Tr Fullerenes and related materials
81.05.Cy Elemental semiconductors

GaN epitaxy on Cu(110) by metal organic chemical vapor deposition

Qiming Li, Jeffery Figiel, George Wang, Huiwen Xu, and Ganesh Balakrishnan

Appl. Phys. Lett. 100, 192110 (2012); http://dx.doi.org/10.1063/1.4714738 (3 pages)

Online Publication Date: 10 May 2012

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We demonstrate that Cu can be a suitable substrate material for c-plane GaN epitaxy using metal organic chemical vapor deposition. By using a low temperature AlN buffer layer, Ga and Cu alloying can be prevented so that GaN layer can be grown on Cu at a temperature of 1000 °C. An epitaxial relation of GaN (0001)//Cu(110) is observed using cross-section transmission electron microscopy and electron back scatter diffraction studies. The single crystalline GaN epilayer shows a threading dislocation density of 3 × 109 cm−2 and strong band edge emission at room temperature. The site alignment between GaN (0001) and Cu(110) shows a mesh ratio of 4/3 and 5/3 in GaN [10-10] and GaN [-1100] directions, which is attributed to the epitaxial relation observed.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
79.20.Kz Other electron-impact emission phenomena
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