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2 Jan 2012

Volume 100, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 100, 013101 (2012); http://dx.doi.org/10.1063/1.3673334 (3 pages)

Patrice Genevet, Nanfang Yu, Francesco Aieta, Jiao Lin, Mikhail A. Kats, Romain Blanchard, Marlan O. Scully, Zeno Gaburro, and Federico Capasso
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Effects of nitrogen doping on device characteristics of InSnO thin film transistor

Chang Eun Kim and Ilgu Yun

Appl. Phys. Lett. 100, 013501 (2012); http://dx.doi.org/10.1063/1.3673556 (3 pages) | Cited 3 times

Online Publication Date: 3 January 2012

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The effects of nitrogen doping on the performance of InSnO thin film transistor were investigated. When the nitrogen was doped in the InSnO channel, device characteristics such as turn-on voltage, subthreshold swing, field effect mobility, and on/off current ratio were enhanced. The N2 insertion in the deposition process decreased the density of the interface trap states and enhanced the crystallinity of the InSnO channel layer. These results indicate that device characteristics can be improved by nitrogen doping in the deposition process.
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85.30.Tv Field effect devices

Perfect spin-filter and highly spin-polarized current in a quantum network device

Hua-Hua Fu and Kai-Lun Yao

Appl. Phys. Lett. 100, 013502 (2012); http://dx.doi.org/10.1063/1.3673840 (3 pages) | Cited 3 times

Online Publication Date: 3 January 2012

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We report a design to realize perfect spin-filter and highly spin-polarized current in a quantum network device composed of multiple quantum dots (QDs). By producing an energy difference between the site energy of the upper QDs and down ones, the linear conductance spectra present well-defined insulating bands with very steep edges due to the Fano antiresonance in some suitable conditions. Considering a Zeeman splitting, highly to 100% spin-polarized windows appear in the conductance spectra, which makes the network device can be used as a perfect spin filter to generate completely spin-polarized current. This idea opens a practical way to prompt other similar configures of the network to realize perfect spin-filter.
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85.30.-z Semiconductor devices

Frequency splitting of the main mode in a microelectromechanical resonator due to coupling with an anchor resonance

Lauri Lipiäinen, Antti Jaakkola, Kimmo Kokkonen, and Matti Kaivola

Appl. Phys. Lett. 100, 013503 (2012); http://dx.doi.org/10.1063/1.3673558 (3 pages) | Cited 1 time

Online Publication Date: 4 January 2012

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We present an experimental study of the frequency scaling of the main, square-extensional mode in a piezoelectrically actuated plate resonator. The studied set consists of resonators of different plate sizes with identical anchors. The behavior of the square-extensional mode is analyzed using electrical impedance measurements and optical characterization of the mechanical vibration fields. The results reveal a detrimental anchor effect, where for certain plate sizes the square-extensional mode branch is split into two due to a coupled oscillation of the resonator plate and the anchors.
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07.10.Cm Micromechanical devices and systems
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, and Shigenobu Yamakoshi

Appl. Phys. Lett. 100, 013504 (2012); http://dx.doi.org/10.1063/1.3674287 (3 pages) | Cited 16 times

Online Publication Date: 4 January 2012

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We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.
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85.30.Tv Field effect devices

Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

P. Fantini, S. Brazzelli, E. Cazzini, and A. Mani

Appl. Phys. Lett. 100, 013505 (2012); http://dx.doi.org/10.1063/1.3674311 (4 pages) | Cited 8 times

Online Publication Date: 4 January 2012

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In a phase change memory the device resistance corresponding to the amorphous phase monotonically increases with time after the reset programming operation. This phenomenon, called drift, affects the stability of the high resistive state, namely the reset state. In this work we investigate the resistance-drift process through ellipsometric measurements as a function of time in thin film of as-deposited amorphous Ge2Sb2Te5 alloy. We show a tight correlation between the resistance increase with time and the optical band gap widening extracted by ellipsometric measurements. This characterization supports the drift origin due to a structural atomic rearrangement of the amorphous network affecting the band structure that, in particular, promotes the increase of the energy gap and the reduction of localized states within the energy gap.
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71.20.Lp Intermetallic compounds
73.61.Jc Amorphous semiconductors; glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Jg Amorphous semiconductors; glasses

High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor

J. D. Sun (孙建东), Y. F. Sun (孙云飞), D. M. Wu (吳东岷), Y. Cai (蔡勇), H. Qin (秦华), and B. S. Zhang (张宝顺)

Appl. Phys. Lett. 100, 013506 (2012); http://dx.doi.org/10.1063/1.3673617 (4 pages) | Cited 1 time

Online Publication Date: 5 January 2012

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Using only optical lithography, we have fabricated a GaN/AlGaN high-electron mobility transistor with distinctive source and drain antennas electrically isolated from the electron channel. Working at room temperature, it efficiently detects terahertz radiation via self-mixing, with a responsivity (3.6 kV/W) exceptionally high for a III-V device and with a noise (40pW/math) just above the thermal limit. Performance improves at 77 K. While the device itself is micrometer-sized, our modeling indicates the asymmetric antennas induce a rather localized (<200 nm) region of strong self-mixing. Thus, a nanometer-scale active region is achieved by design and without recourse to electron-beam lithography.
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85.30.Tv Field effect devices
84.40.Ba Antennas: theory, components and accessories

Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

JunShuai Xue, JinCheng Zhang, YaoWei Hou, Hao Zhou, JinFeng Zhang, and Yue Hao

Appl. Phys. Lett. 100, 013507 (2012); http://dx.doi.org/10.1063/1.3675453 (3 pages) | Cited 7 times

Online Publication Date: 6 January 2012

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High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by pulsed-metal-organic-chemical-vapor-deposition (PMOCVD). High electron mobility of 1414 cm2/Vs was achieved along with a two-dimensional-electron-gas density of 2.55 × 1013 cm−2. We attribute it to the high quality PMOCVD-grown InAlN barriers and, additionally, to the novel GaN layer growth between two InAlN barriers, which consists of a thin GaN spacer to prevent indium-redistribution and indium-cluster formation during the subsequent growth and a relatively thick GaN channel to enhance electron mobility. High-electron-mobility-transistors fabricated on these heterostructures with 0.8-μm-length gate exhibit a maximum drain current of 906 mA/mm and a transconductance of 186 mS/mm.
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85.30.Tv Field effect devices

Mid-gap trap states in CdTe nanoparticle solar cells

A. Bezryadina, C. France, R. Graham, L. Yang, S. A. Carter, and G. B. Alers

Appl. Phys. Lett. 100, 013508 (2012); http://dx.doi.org/10.1063/1.3673278 (4 pages) | Cited 3 times

Online Publication Date: 6 January 2012

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Thin film solar cells comprised of quantum-confined CdTe nanoparticles are shown to have a low intrinsic density of mid-gap trap states relative to their equivalent bulk film, indicating that the ligands are effective at electrically passivating surface states. Sintering the nanoparticles into a poly-crystalline thin film increases device performance but also increases the density of mid-gap trap states due to doping from the CdCl treatment and the formation of long range disorder such as grain boundaries and dislocations. Long term aging under illumination increases the density of mid-gap traps in the unsintered films due to degradation of the ligands.
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88.40.jm Thin film III-V and II-VI based solar cells
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