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2 Jan 2012

Volume 100, Issue 1, Articles (01xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 013101 (2012); http://dx.doi.org/10.1063/1.3673334 (3 pages)

Patrice Genevet, Nanfang Yu, Francesco Aieta, Jiao Lin, Mikhail A. Kats, Romain Blanchard, Marlan O. Scully, Zeno Gaburro, and Federico Capasso
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Tunneling magnetoresistance oscillations due to charging effects in MgO double barrier magnetic tunnel junctions

Ruisheng Liu, See-Hun Yang, Xin Jiang, Teya Topuria, Philip M. Rice, Charles Rettner, and Stuart Parkin

Appl. Phys. Lett. 100, 012401 (2012); http://dx.doi.org/10.1063/1.3673557 (3 pages) | Cited 2 times

Online Publication Date: 3 January 2012

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We observe single-electron tunneling effect and tunneling magnetoresistance (TMR) oscillations in MgO double barrier magnetic tunnel junctions patterned with electron beam lithography and argon ion milling. The TMR oscillations are induced by the interplay of single charge effect and spin-dependent tunneling. The oscillations and its period can be well-controlled by properly engineering the thickness of MgO tunnel barriers and the size of the tunnel junctions.
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75.47.Pq Other materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
72.25.Mk Spin transport through interfaces

Spin transfer torque programming dipole coupled nanomagnet arrays

Andrew Lyle, Jonathan Harms, Todd Klein, August Lentsch, Daniel Martens, Angeline Klemm, and Jian-Ping Wang

Appl. Phys. Lett. 100, 012402 (2012); http://dx.doi.org/10.1063/1.3673618 (3 pages)

Online Publication Date: 3 January 2012

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We experimentally demonstrated spin transfer torque (STT) programming of dipole coupled nanomagnets using magnetic tunnel junctions. The STT write operations were performed in conjunction with a clock field used in magnetic quantum cellular automata (MQCA) operations. The spacing and number of nanomagnets in the transmission line strongly affected the STT programming of the individual pillars. These MQCA transmission lines ranged in length from 2 elements to 20 elements, while device sizes ranged between 50 nm × 80 nm and 70 nm × 100 nm with spacing between 10 nm and 15 nm. With the application of the clock field, currents of 100-200 μA are sufficient to STT program the device. The demonstration of STT programming of individual nanomagnets in a dipole coupled array marks a significant step forward for applications such as MQCA logic device.
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84.30.Sk Pulse and digital circuits

Engineering magnetic domains in manganite thin films by laser interference

S. R. Bakaul, W. Lin, and T. Wu

Appl. Phys. Lett. 100, 012403 (2012); http://dx.doi.org/10.1063/1.3673870 (4 pages) | Cited 2 times

Online Publication Date: 4 January 2012

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We report on the laser interference (LI) aided conversion from maze-like to stripe-like magnetic domains in La1−xSrxMnO3 (x ∼ 0.3) thin films grown on LaAlO3 substrates. This conversion is attributed to the periodic, local, and rapid heating by LI which facilitates the reconfiguration of magnetic domains without damaging the film structures. By annealing the sample, the stripe-like domains can be converted back to the maze-like state. Our result represents a non-magnetic scheme for reversible magnetic domain engineering in ferromagnetic thin films.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ch Domain walls and domain structure
75.70.Kw Domain structure (including magnetic bubbles and vortices)
81.40.Gh Other heat and thermomechanical treatments

Reversal and excitations of a nanoscale magnetic domain by sustained pure spin currents

Han Zou, Shuhan Chen, and Yi Ji

Appl. Phys. Lett. 100, 012404 (2012); http://dx.doi.org/10.1063/1.3673855 (3 pages) | Cited 1 time

Online Publication Date: 5 January 2012

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Spin-transfer effects induced by pure spin currents are explored in nonlocal spin valves by using sustained injection currents. Compared to pulsed injection currents used in previous experiments, this approach provides persistent spin-transfer torques and preserves the history of the reversal process. A nanoscale domain in a magnetic wire can be switched reversibly by the sustained pure spin currents. In addition, dips in nonlocal spin signal curves are observed at high magnetic fields for only one polarity of the injection currents. This indicates stable-state magnetization precession around the external field driven by the sustained pure spin currents.
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75.60.Jk Magnetization reversal mechanisms
75.60.Ch Domain walls and domain structure
75.75.Fk Domain structures in nanoparticles
75.78.Fg Dynamics of domain structures

Local electrical characterization of resonant magnetization motion in a single ferromagnetic sub-micrometer particle in lateral geometry

A. Slobodskyy and B. J. van Wees

Appl. Phys. Lett. 100, 012405 (2012); http://dx.doi.org/10.1063/1.3673908 (3 pages)

Online Publication Date: 5 January 2012

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In this article, a detailed characterization of a magnetization motion in a single sub-micrometer and multi-terminal ferromagnetic structure in lateral geometry is performed in a GHz regime using direct DC characterization technique. We have shown applicability of the Stoner-Wohlfarth model [E. C. Stoner and E. P. Wohlfarth, Philos. Trans. R. Soc. London, Ser. A 240, 599 (1948)] to the long (large length to width ratio) magnetic nano-structure. Applying the model to experimental data, we are able to extract relevant magnetization motion parameters and show a correlation between high frequency inductive currents and local magnetization. DC voltage generated over the structure at the resonance, with external magnetic field under an angle to the shape anisotropy axis, is explained.
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75.60.Jk Magnetization reversal mechanisms
75.30.Gw Magnetic anisotropy
75.75.-c Magnetic properties of nanostructures
75.50.Bb Fe and its alloys

Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet

Danilo Bürger, Shengqiang Zhou, Marcel Höwler, Xin Ou, György J. Kovacs, Helfried Reuther, Arndt Mücklich, Wolfgang Skorupa, Manfred Helm, and Heidemarie Schmidt

Appl. Phys. Lett. 100, 012406 (2012); http://dx.doi.org/10.1063/1.3674981 (4 pages) | Cited 4 times

Online Publication Date: 6 January 2012

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Ferromagnetic Ge:Mn has been fabricated by Mn implantation in intrinsic Ge wafers and by pulsed laser annealing with a pulse duration of 300 ns. Due to a segregation instability during laser annealing, Mn segregates at the liquid-solid interface and an approximately 40 nm thick Ge:Mn surface layer is strongly enriched with Mn. Plan-view images reveal a percolating Mn-rich nanonet. Hysteretic anomalous Hall effect has been observed up to 30 K, but it vanishes after etching away the 40 nm thick Mn-rich Ge:Mn surface layer. The nanonet seems to support the correlation between magnetization and hysteretic Hall resistance. Intrinsic scattering in the threads or vertices of this nanonet may lead to the observed anomalous Hall effect.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Cw Elemental semiconductors
75.50.Pp Magnetic semiconductors
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.55.ag Semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
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