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Applied Physics Letters / Volume 100 / Issue 2 / SURFACES AND INTERFACES

Appl. Phys. Lett. 100, 021601 (2012); http://dx.doi.org/10.1063/1.3675481 (3 pages)

Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition

Rafik Addou1, Arjun Dahal1, Peter Sutter2, and Matthias Batzill1

1Department of Physics, University of South Florida, Tampa, Florida 33620, USA
2Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA

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(Received 4 November 2011; accepted 12 December 2011; published online 9 January 2012)

In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 °C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at ∼550 °C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below ∼500 °C a competing surface carbide phase impedes graphene formation.

© 2012 American Institute of Physics

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KEYWORDS and PACS

Keywords

chemical interdiffusion, chemical vapour deposition, graphene, materials preparation, monolayers, nickel, surface diffusion

PACS

  • 81.05.ue

    Graphene

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.35.Fx

    Diffusion; interface formation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3675481

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. Sutter, J. T. Sadowski, and E. Sutter, Phys. Rev. B 80, 245411 (2009).


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