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Appl. Phys. Lett. 100, 022102 (2012); http://dx.doi.org/10.1063/1.3675632 (3 pages)

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Jie Sun (孙捷)1, Matthew T. Cole2, Niclas Lindvall1, Kenneth B. K. Teo (张谋瑾)3, and August Yurgens1

1Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, S-41296 Gothenburg, Sweden
2Department of Engineering, Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom
3AIXTRON Nanoinstruments Ltd., Swavesey, CB24 4FQ Cambridge, United Kingdom

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(Received 6 September 2011; accepted 16 December 2011; published online 9 January 2012)

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 °C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metal-catalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp2-C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production.

© 2012 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

  • 73.63.Bd

    Nanocrystalline materials

  • 78.30.Na

    Fullerenes and related materials

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 82.30.Lp

    Decomposition reactions (pyrolysis, dissociation, and fragmentation)

  • 78.67.Wj

    Optical properties of graphene

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    J. Sun, N. Lindvall, M. T. Cole, K. B. K. Teo, and A. Yurgens, Appl. Phys. Lett. 98, 252107 (2011)APPLAB000098000025252107000001.

    J. Biscoe and B. E. Warren, J. Appl. Phys. 13, 364 (1942)JAPIAU000013000006000364000001.

    M. A. Tamor and W. C. Vassell, J. Appl. Phys. 76, 3823 (1994)JAPIAU000076000006003823000001.

    J. Kotakoski, A. V. Krasheninnikov, U. Kaiser, and J. C. Meyer, Phys. Rev. Lett. 106, 105505 (2011).


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