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Appl. Phys. Lett. 100, 023108 (2012); http://dx.doi.org/10.1063/1.3675620 (4 pages)

The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

Sanjay Prabhakar1, Roderick V. N. Melnik1,2, and Luis L. Bonilla2

1M2 NeT Laboratory, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5, Canada
2Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes, Spain

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(Received 2 November 2011; accepted 16 December 2011; published online 10 January 2012)

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower QDs radius due to the suppression of the Landé g-factor towards bulk crystal. In the range of 104−106 V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating spin-flip rate through spin-orbit coupling in a regime where the g-factor changes its sign.

© 2012 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.21.La

    Quantum dots

  • 81.05.Ea

    III-V semiconductors

  • 81.07.Ta

    Quantum dots

  • 63.22.-m

    Phonons or vibrational states in low-dimensional structures and nanoscale materials

  • 71.18.+y

    Fermi surface: calculations and measurements; effective mass, g factor

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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