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Applied Physics Letters / Volume 100 / Issue 2 / NANOSCALE SCIENCE AND TECHNOLOGY

Appl. Phys. Lett. 100, 023110 (2012); http://dx.doi.org/10.1063/1.3675636 (3 pages)

Laser direct growth of graphene on silicon substrate

Dapeng Wei and Xianfan Xu

School of Mechanical Engineering and Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA

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(Received 4 November 2011; accepted 16 December 2011; published online 10 January 2012)

We demonstrate laser direct growth of few layer graphene on a silicon substrate. In our study, a continuous wave laser beam was focused on a poly(methyl methacrylate) (PMMA)-coated silicon wafer to evaporate PMMA and melt the silicon wafer. Carbon atoms, decomposed from PMMA, were absorbed by the molten silicon surface, and then separated from silicon in the cooling process to form few-layer graphene. This Si-catalyzed method will provide a new approach and platform for applications of graphene.

© 2012 American Institute of Physics

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KEYWORDS and PACS

Keywords

cooling, evaporation, graphene, laser beam effects, laser materials processing, melting, pyrolysis

PACS

  • 42.62.-b

    Laser applications

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

  • 82.30.Lp

    Decomposition reactions (pyrolysis, dissociation, and fragmentation)

  • 64.70.dj

    Melting of specific substances

  • 81.05.ue

    Graphene

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3675636

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Q. Yu, J. Lian, S. Siriponglert, H. Li, Y. P. Chen, and S. Pei, Appl. Phys. Lett. 93, 113103 (2008)APPLAB000093000011113103000001.

    H. Cao, Q. Yu, R. Colby, D. Pandey, C. S. Park, J. Lian, D. Zemlyanov, I. Childres, V. Drachev, E. A. Stach et al., J. Appl. Phys. 107, 044310 (2010)JAPIAU000107000004044310000001.


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