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Appl. Phys. Lett. 100, 023307 (2012); http://dx.doi.org/10.1063/1.3671181 (3 pages)

Organic photovoltaic cells based on unconventional electron donor fullerene and electron acceptor copper hexadecafluorophthalocyanine

J. L. Yang, P. Sullivan, S. Schumann, I. Hancox, and T. S. Jones

Department of Chemistry, University of Warwick, Coventry CV4 7AL, United Kingdom

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(Received 23 August 2011; accepted 29 November 2011; published online 12 January 2012)

We demonstrate organic discrete heterojunction photovoltaic cells based on fullerene (C60) and copper hexadecafluorophthalocyanine (F16CuPc), in which the C60 and F16CuPc act as the electron donor and the electron acceptor, respectively. The C60/F16CuPc cells fabricated with conventional and inverted architectures both exhibit comparable power conversion efficiencies. Furthermore, we show that the photocurrent in both cells is generated by a conventional exciton dissociation mechanism rather than the exciton recombination mechanism recently proposed for a similar C60/F16ZnPc system [Song et al., J. Am. Chem. Soc. 132, 4554 (2010)]. These results demonstrate that new unconventional material systems are a potential way to fabricate organic photovoltaic cells with inverted as well as conventional architectures.

© 2012 American Institute of Physics

KEYWORDS, PACS, and IPC

PACS

  • 84.60.Jt

    Photoelectric conversion

  • 72.40.+w

    Photoconduction and photovoltaic effects

  • 71.35.-y

    Excitons and related phenomena

International Patent Classification (IPC)

  • H01L27/14

    Including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

  • H01L27/142

    Energy conversion devices

  • H01L31/00

    Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

  • H01L31/04

    Adapted as conversion devices

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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Figures (3) Tables (1)

Figures (click on thumbnails to view enlargements)

FIG.1
Schematic of device structures and electronic energy level diagrams in open-circuit conditions for (a) a conventional ITO/MoOx/C60/F16CuPc/BCP/Al cell and (b) an inverted ITO/BCP/F16CuPc/C60/MoOx/Al cell.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(Color online) Top: J-V curves recorded during 1 sun (100 mW cm−2) illumination and in the dark (dashed lines) for the conventional cell ITO/MoOx(5 nm)/C60(40 nm)/F16CuPc(35 nm)/BCP(8 nm)/Al and the inverted cell ITO/BCP(8 nm)/F16CuPc(35 nm)/C60(40 nm)/MoOx(10 nm)/Al. Bottom: J-V curves recorded at various illumination intensities from 12 to 487 mW cm−2 for the conventional cell and (inset) Jsc as a function of the incident optical intensity.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(Color online) Normalized electronic absorption spectra of an F16CuPc single layer (35 nm, blue dotted line), a C60 single layer (40 nm, green dashed line), and monochromatic EQE of the device with conventional architecture ITO/MoOx(5 nm)/C60(40 nm)/F16CuPc(35 nm)/BCP(8 nm)/Al (red solid line). The vertical line indicates the balanced absorption of C60 and F16CuPc at about555 nm, where the EQE peak should emerge if the photocurrent in OPVs is generated by an exciton recombination mechanism at the C60/F16CuPc interface.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

Tables

Table I. Key cell performance parameters obtained under 1 sun illumination from a conventional OPV cell, ITO/MoOx(5 nm)/C60(40 nm)/F16CuPc(35 nm)/BCP(8 nm)/Al, and an inverted OPV cell, ITO/BCP(8 nm)/F16CuPc(35 nm)/C60(40 nm)/MoOx(10 nm)/Al. The values in brackets state the highest PCEs recorded.

View Table


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