APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 May 2012

Volume 100, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 203104 (2012); http://dx.doi.org/10.1063/1.3701731 (4 pages)

Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee, and Y. He
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Domain tuning in mixed-phase BiFeO3 thin films using vicinal substrates

Lu You, Shintaro Yasui, Yoshitaka Ehara, Xi Zou, Hui Ding, Zuhuang Chen, Weigang Chen, Lang Chen, Hiroshi Funakubo, and Junling Wang

Appl. Phys. Lett. 100, 202901 (2012); http://dx.doi.org/10.1063/1.4717986 (4 pages)

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The structural and ferroelectric domain variants of highly strained BiFeO3 films grown on vicinal LaSrAlO4 substrates were studied by piezoelectric force microscopy and high-resolution x-ray reciprocal space mapping. Through symmetry breaking of the substrate surface, ferroelastic domain variants in the highly strained MC phase BiFeO3 can be greatly reduced in thinner, purely tetragonal-like films. More interestingly, in thicker, mixed phase films, the structural variants can also be tailored by substrate vicinality. These findings lead to better understanding of the phase evolution and polarization rotation process in the strain-driven polymorphic phase system.
Show PACS
77.80.Dj Domain structure; hysteresis
77.55.fp Other ferroelectric films
77.55.hn Other piezoelectric or electrostrictive films
77.22.Ej Polarization and depolarization
77.65.Ly Strain-induced piezoelectric fields

Stoichiometry of SrTiO3 films grown by pulsed laser deposition

G. Z. Liu, Q. Y. Lei, and X. X. Xi

Appl. Phys. Lett. 100, 202902 (2012); http://dx.doi.org/10.1063/1.4717984 (3 pages) | Cited 2 times

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the effects of laser energy density and oxygen pressure on the cation stoichiometry of homoepitaxial (001) SrTiO3 thin film grown by pulsed laser deposition. A broad growth window was found for near stoichiometric, uniform SrTiO3 thin films. At oxygen pressures, at or below 10−2 Torr, laser energy density below around 1.0 J/cm2 is needed, whereas around 0.1 Torr, near stoichiometry can be reached for laser energy densities from 0.9 to 2.3 J/cm2. The kinetic energy of the ablated species is considered an important factor in affecting the film stoichiometry.
Show PACS
81.15.Fg Pulsed laser ablation deposition

Shear-mode magnetostrictive/piezoelectric composite with an enhanced magnetoelectric coefficient

Yaojin Wang, D. Hasanyan, Jiefang Li, D. Viehland, and Haosu Luo

Appl. Phys. Lett. 100, 202903 (2012); http://dx.doi.org/10.1063/1.4718352 (3 pages) | Cited 3 times

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A magnetoelectric (ME) laminate heterostructure consisting of two shear-mode piezoelectric Pb(Mg1/3Nb2/3)O3-30PbTiO3 (PMN-PT) single crystal layers, a longitudinally magnetized magnetostrictive Tb0.3Dy0.7Fe1.92 alloy plate, and a mechanical clamping brass substrate has been demonstrated that has a notably superior ME effect relative to previous laminate configurations of these two materials. A giant ME coefficient of 7.5 V/(cm Oe) at low frequencies under an optimal dc magnetic bias of ∼400 Oe was found. The superior ME effects originate from the nature of heterostructure design, which allows the PMN-PT single crystals to operate in a shear mode that has maximum electro-mechanical coupling (i.e., d15 = 6800 pC/N).
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films
75.47.Pq Other materials

Relaxor behaviour of K0.5Bi0.5TiO3-BiScO3 ceramics

Chatchai Kruea-In, Gobwute Rujijanagul, Fang Yuan Zhu, and Steven J. Milne

Appl. Phys. Lett. 100, 202904 (2012); http://dx.doi.org/10.1063/1.4718422 (4 pages)

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
Dielectric properties of (1 − x)K0.5Bi0.5TiO3 − xBiScO3 ceramics have been studied for compositions x ≤ 0.5. Single-phase solid solutions occurred for compositions x < 0.25. A frequency-dependent dielectric relaxation was observed, consistent with relaxor behaviour. This gave rise to a relatively stable dielectric permittivity at high temperatures, for example, ɛr = 2880% ± 3%, between temperatures of 500 and 700 K (1 kHz) for composition x = 0.15. This consistency in relative permittivity occurs at higher temperatures than for other lead-free dielectrics. Parameters from Vogel-Fulcher analysis are compared to other relaxors.
Show PACS
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity

Defects and dc electrical degradation in CaCu3Ti4O12 ceramics: Role of oxygen vacancy migration

Jianying Li, Xuetong Zhao, Fang Gu, and Shengtao Li

Appl. Phys. Lett. 100, 202905 (2012); http://dx.doi.org/10.1063/1.4720151 (4 pages) | Cited 3 times

Online Publication Date: 18 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An energy level of 1.12 eV is found in this paper, which is proposed to dominate the dc degradation process of CaCu3Ti4O12 ceramics at high temperature and originated by the migration of oxygen vacancy. In addition, the levels of 0.09 eV and 0.51 eV are suggested to be bulk and domain boundary relaxations, respectively, which show no apparent change after dc electrical degradation. The level of 0.66 eV is proposed to be grain boundary relaxation, which cannot be observed after degradation. The increment of permittivity after dc electrical degradation is resulted from the charges accumulation near the electrodes.
Show PACS
61.72.jd Vacancies
77.84.Cg PZT ceramics and other titanates
77.84.Ek Niobates and tantalates
77.22.Ch Permittivity (dielectric function)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close