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14 May 2012

Volume 100, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 203104 (2012); http://dx.doi.org/10.1063/1.3701731 (4 pages)

Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee, and Y. He
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Effect of oxygen-related surface adsorption on the efficiency and stability of ZnO nanorod array ultraviolet light-emitting diodes

W. Z. Liu, H. Y. Xu, J. G. Ma, C. Y. Liu, Y. X. Liu, and Y. C. Liu

Appl. Phys. Lett. 100, 203101 (2012); http://dx.doi.org/10.1063/1.4717714 (5 pages) | Cited 4 times

Online Publication Date: 14 May 2012

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Ultraviolet light-emitting diodes using MgZnO-coated and bare ZnO nanorod arrays as active layers were manufactured. Both types were exposed to ambient air over a 1-yr period to assess their stability. By monitoring the electroluminescence evolution with air-exposure time and comparing the changes of electroluminescence and x-ray photoelectron spectra before and after vacuum desorption, it is concluded that surface-adsorbed O2 and OH− species, as acceptor and donor surface states, quench ultraviolet electroluminescence, and favor undesirable surface-mediated nonradiative and deep-level recombination. The MgZnO coating prevents surface adsorption, and so the coated nanorod device shows higher efficiency and stability than the uncoated one.
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85.60.Jb Light-emitting devices

Controlled faceting in 〈110〉 germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth

Miroslav Kolíbal, Radek Kalousek, Tomáš Vystavěl, Libor Novák, and Tomáš Šikola

Appl. Phys. Lett. 100, 203102 (2012); http://dx.doi.org/10.1063/1.4714765 (4 pages) | Cited 2 times

Online Publication Date: 14 May 2012

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We show that the hexagonal cross-section of germanium nanowires grown in the 〈110〉 direction by physical vapor deposition is a consequence of minimization of surface energy of the collector droplet. If the droplet is lost or solidified, two {001} sidewall facets are quickly overgrown and the nanowire exhibits a rhomboidal cross-section. This process can be controlled by switching between the liquid and solid state of the droplet, enabling the growth of nanowires with segments having different cross-sections. These experiments are supported by in-situ microscopic observations and theoretical model.
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81.16.Be Chemical synthesis methods
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf Nanowires
47.55.db Drop and bubble formation
68.35.Md Surface thermodynamics, surface energies
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Manipulation of a single electron spin in a quantum dot without magnetic field

S. Bednarek, J. Pawłowski, and A. Skubis

Appl. Phys. Lett. 100, 203103 (2012); http://dx.doi.org/10.1063/1.4714771 (3 pages)

Online Publication Date: 14 May 2012

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In this paper, we propose the construction of a nanodevice performing the spin rotations of an electron confined in an electrostatic quantum dot without the use of a magnetic field. Sinusoidally varying voltage applied in different phases to four gates causes the electron to move along a two-dimensional closed path. The spin-orbit interaction that is present in the structure induces spin rotations. For a properly adjusted AC signal duration, the logical NOT operation or the Hadamard quantum gate can be performed on the electron spin. We perform a simulation of the nanodevice’s time evolution.
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85.35.Gv Single electron devices
FREE

Silicon-based reproducible and active surface-enhanced Raman scattering substrates for sensitive, specific, and multiplex DNA detection

Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee, and Y. He

Appl. Phys. Lett. 100, 203104 (2012); http://dx.doi.org/10.1063/1.3701731 (4 pages) | Cited 5 times

Online Publication Date: 14 May 2012

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Silicon-based active and reproducible surface-enhanced Raman scattering (SERS) substrate, i.e., silver nanoparticles decorated-silicon wafers (AgNPs@Si), is employed for constructing high-performance sensors. Significantly, the AgNPs@Si, facilely prepared via in situ AgNPs growth on silicon wafers, features excellent SERS reproducibility and high enhancement factor. Our experiment further demonstrates such resultant silicon-based SERS substrate is efficacious for multiplex, sensitive, and specific DNA detection. In particular, single-base mismatched DNA with low concentrations is readily discriminated by using the AgNPs@Si. Moreover, the silicon-based sensor exhibits adequate multiplexing capacity, enabling unambiguous identification of the dual-target DNA detection.
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87.80.Dj Spectroscopies
87.14.gk DNA
87.15.M- Spectra of biomolecules

Analysis of vacancy-induced amorphization of single-layer graphene

Corinne Carpenter, Ashwin Ramasubramaniam, and Dimitrios Maroudas

Appl. Phys. Lett. 100, 203105 (2012); http://dx.doi.org/10.1063/1.4717116 (4 pages) | Cited 1 time

Online Publication Date: 14 May 2012

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We report results of a systematic molecular-dynamics study on the vacancy-induced amorphization of single-layer graphene. An inserted vacancy concentration between 5% and 10% marks the onset of the amorphization transition. The computed amorphized configurations are in agreement with recent experimental observations. We find that the transition becomes less abrupt with vacancy concentration as the temperature increases and determine the surface roughness of the defective graphene as a function of vacancy concentration. We also find that the electronic density of states of vacancy-amorphized graphene is characterized by introduction of localized states near the Fermi level of perfect single-layer graphene.
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61.43.Dq Amorphous semiconductors, metals, and alloys
73.20.At Surface states, band structure, electron density of states
61.72.jd Vacancies
68.35.bg Semiconductors

Dynamical band-engineering of spin-polarized edge-states in normal insulators

B. H. Wu, Qin Liu, Xunya Jiang, and J. C. Cao

Appl. Phys. Lett. 100, 203106 (2012); http://dx.doi.org/10.1063/1.4717987 (4 pages) | Cited 1 time

Online Publication Date: 15 May 2012

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We investigate the electronic and transport properties of a normal insulator in form of a zigzag ribbon based on the Kane-Mele model subjected to circularly polarized radiation. Our results show that chiral edge-states can be induced in the band gap of the quasi-energy spectra under periodic driving. More interestingly, for appropriate parameters, there exists a single chiral edge state at each boundary of the sample. As a result, the conductance shows plateau structure with the step height e2/h as we increase the ac field intensity. These observations may find their potential applications for high-efficiency non-magnetic spin injection which can be readily tuned by modulating an external ac field.
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72.25.-b Spin polarized transport
71.20.-b Electron density of states and band structure of crystalline solids

Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene

Wan Sik Hwang, Kristof Tahy, Xuesong Li, Huili (Grace) Xing, Alan C. Seabaugh, Chun Yung Sung, and Debdeep Jena

Appl. Phys. Lett. 100, 203107 (2012); http://dx.doi.org/10.1063/1.4716983 (3 pages) | Cited 2 times

Online Publication Date: 15 May 2012

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Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology

Structure of iron nanolayers embedded in amorphous alloys

M. Ghafari, H. Hahn, R. A. Brand, R. Mattheis, Y. Yoda, S. Kohara, R. Kruk, and S. Kamali

Appl. Phys. Lett. 100, 203108 (2012); http://dx.doi.org/10.1063/1.4717711 (4 pages)

Online Publication Date: 16 May 2012

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Metalloid-free magnetic amorphous layers have been searched for their presumably high magnetic density. Multilayers of iron and amorphous boron-doped cobalt-iron have been studied with this in mind. Samples with various Fe thicknesses and a constant thickness of amorphous boron doped cobalt-iron were prepared. The aim was to reduce the metalloid content as much as possible but retaining the amorphous structure. Transmission electron microscopy, x-ray diffraction studies, and Mössbauer spectroscopy have been applied to elucidate physical properties. The iron-partial phonon density of states was measured showing differences between the amorphous and crystalline films.
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68.55.J- Morphology of films
61.43.Er Other amorphous solids
76.80.+y Mössbauer effect; other γ-ray spectroscopy
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Phononic bandgaps in graphene-based materials

Michael M. Sigalas and Emmanuel N. Koukaras

Appl. Phys. Lett. 100, 203109 (2012); http://dx.doi.org/10.1063/1.4717746 (3 pages) | Cited 1 time

Online Publication Date: 16 May 2012

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The phonon density of states of graphene based materials have been studied using density functional theory. Substitution of the carbon atoms with carbon isotopes may result in the appearance of gaps in the phonon density of states. Wider gaps are introduced when selected carbon atoms are replaced with germanium atoms. The effect of the percentage of germanium atoms substituting carbon atoms in graphene has also been studied. The results presented here may find application in the design of efficient thermoelectric materials.
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73.22.Pr Electronic structure of graphene
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
72.20.Pa Thermoelectric and thermomagnetic effects
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
63.22.Rc Phonons in graphene

Observation of a Coulomb blockade in strontium titanate thin films

V. Grosse, F. Schmidl, and P. Seidel

Appl. Phys. Lett. 100, 203110 (2012); http://dx.doi.org/10.1063/1.4717991 (4 pages)

Online Publication Date: 16 May 2012

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We report on the study of the low temperature electronic transport in strontium titanate thin films having a thickness of 25–30 nm. I-V characteristics measured below 4.2 K show unique structures which are evidence for the occurrence of a Coulomb blockade. Simulations of the measured characteristics suggest that this behavior is closely related to the formation of nanoscopic metallic islands within an insulating matrix which arrange in a network connected via tunneling currents.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Gk Tunneling
68.35.bt Other materials
72.80.Ga Transition-metal compounds

Shot noise suppression in InGaAs/InGaAsP quantum channels

Yoshitaka Nishihara, Shuji Nakamura, Kensuke Kobayashi, Teruo Ono, Makoto Kohda, and Junsaku Nitta

Appl. Phys. Lett. 100, 203111 (2012); http://dx.doi.org/10.1063/1.4718934 (4 pages) | Cited 3 times

Online Publication Date: 16 May 2012

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We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e2/h) (N = 4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.
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85.35.-p Nanoelectronic devices
81.07.Lk Nanocontacts

Complementary resistive switching in tantalum oxide-based resistive memory devices

Yuchao Yang, Patrick Sheridan, and Wei Lu

Appl. Phys. Lett. 100, 203112 (2012); http://dx.doi.org/10.1063/1.4719198 (4 pages) | Cited 5 times

Online Publication Date: 16 May 2012

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Complementary resistive switches (CRS) are considered as a potential solution for the sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A typical CRS is composed of two bipolar memory cells that are connected anti-serially. Here, we report a tantalum-oxide based resistive memory that achieves the complementary switching functionality within a single memory cell. The complementary switching effect is accompanied by switching polarity reversal in different voltage bias regimes. These effects were explained by the redistribution of oxygen vacancies inside the tantalum-oxide layers. The effects of symmetry breaking on bipolar switching and complementary switching were also discussed.
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84.30.Sk Pulse and digital circuits

Formation and transformation of embedded GaN nanocrystals

A. W. Wood, R. R. Collino, P. T. Wang, Y. Q. Wang, and R. S. Goldman

Appl. Phys. Lett. 100, 203113 (2012); http://dx.doi.org/10.1063/1.4714918 (4 pages)

Online Publication Date: 16 May 2012

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We have investigated the nucleation, growth and transformation of nitride nanostructures synthesized by nitrogen ion implantation into GaAs, followed by thermal annealing. High energy implantation into GaAs thin films results in the formation of a nitrogen-rich amorphous layer, with crystalline remnants. Subsequent annealing leads to the formation of polycrystalline zincblende and/or wurtzite GaN nanocrystals. We discuss the role of annealing time and temperature on nanocrystal nucleation and growth and present a time-temperature-transformation diagram that describes the nucleation of zincblende GaN and its subsequent transformation to wurtzite GaN.
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81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
61.72.uj III-V and II-VI semiconductors
64.60.qj Studies of nucleation in specific substances
61.46.-w Structure of nanoscale materials
81.05.Ea III-V semiconductors

Aharonov-Bohm effect in an electron-hole graphene ring system

D. Smirnov, H. Schmidt, and R. J. Haug

Appl. Phys. Lett. 100, 203114 (2012); http://dx.doi.org/10.1063/1.4717622 (3 pages) | Cited 2 times

Online Publication Date: 16 May 2012

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Aharonov-Bohm oscillations are observed in a graphene quantum ring with a topgate covering one arm of the ring. As graphene is a gapless semiconductor, this geometry allows to study not only the quantum interference of electrons with electrons or holes with holes, but also the unique situation of quantum interference between electrons and holes. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interferences.
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73.23.-b Electronic transport in mesoscopic systems
72.80.Vp Electronic transport in graphene
81.05.ue Graphene

Interface mediated resistive switching in epitaxial NiO nanostructures

Jivika Sullaphen, Kashinath Bogle, Xuan Cheng, John M. Gregg, and Nagarajan Valanoor

Appl. Phys. Lett. 100, 203115 (2012); http://dx.doi.org/10.1063/1.4714888 (5 pages) | Cited 3 times

Online Publication Date: 17 May 2012

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We report on the non-volatile resistive switching properties of epitaxial nickel oxide (NiO) nanostructures, 10-100 nm wide and up to 30 nm high grown on (001)-Nb:SrTiO3 substrates. Conducting-atomic force microscopy on individual nano-islands confirms prominent bipolar switching with a maximum ON/OFF ratio of ∼103 at a read voltage of ∼+0.4 V. This ratio is found to decrease with increasing height of the nanostructure. Linear fittings of I-V loops reveal that low and high resistance states follow Ohmic-conduction and Schottky-emission mechanism, respectively. The switching behavior (dependence on height) is attributed to the modulation of the carrier density at the nanostructure-substrate interface due to the applied electric field.
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72.60.+g Mixed conductivity and conductivity transitions
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Ng Insulators
61.46.-w Structure of nanoscale materials

Electric field effect in graphite crystallites

Adarsh Sagar, Kannan Balasubramanian, Marko Burghard, and Klaus Kern

Appl. Phys. Lett. 100, 203116 (2012); http://dx.doi.org/10.1063/1.4719204 (3 pages) | Cited 1 time

Online Publication Date: 17 May 2012

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Graphite is a highly anisotropic crystal with a quasi-two-dimensional electronic structure exhibiting high intrinsic charge carrier mobility. Here, we investigate the effect of an electric field on the resistance of individual graphite crystallites with a thickness on the order of 40 nm. Ambipolar field-effect behavior was achieved with the aid of a polymer electrolyte gate. By optimizing the device geometry, devices with an on/off current ratio of up to 4 and carrier mobilities of around 100 cm2/Vs could be attained directly on the crystallites.
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81.05.uf Graphite
85.30.Tv Field effect devices

Laterally aligned quantum rings: From one-dimensional chains to two-dimensional arrays

Jiang Wu, Zhiming M. Wang, Kyland Holmes, Euclydes Marega, Jr., Zhihua Zhou, Handong Li, Yuriy I. Mazur, and Gregory J. Salamo

Appl. Phys. Lett. 100, 203117 (2012); http://dx.doi.org/10.1063/1.4719519 (4 pages) | Cited 6 times

Online Publication Date: 17 May 2012

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We present the fabrication of ordered quantum rings by the conversion of partially capped quantum dots. Morphological transformation of quantum dots to quantum rings is demonstrated by partially capping self-assembled quantum dots. Quantum rings have been fabricated on high index surfaces by this growth technique. The lateral ordering of quantum rings is introduced by engineering the strain field of a multi-layer InGaAs superlattice template. By using high index surfaces, the one-dimensional ordering of quantum rings on GaAs (100) surface was observed to evolve into two-dimensional aligned quantum ring arrays.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
81.16.Dn Self-assembly

Single molecules probe the polarization dynamics of poly (methyl methacrylate) in external electric field

Ruiyun Chen, Guofeng Zhang, Yan Gao, Liantuan Xiao, and Suotang Jia

Appl. Phys. Lett. 100, 203118 (2012); http://dx.doi.org/10.1063/1.4717049 (4 pages) | Cited 1 time

Online Publication Date: 17 May 2012

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We demonstrate the electric field (EF) induced polarization dynamics of poly (methyl methacrylate) (PMMA) by observing the fluorescence modulation of embedded non-polar single squaraine-derived rotaxane molecules. It is established that interaction between the molecular energy level and the potential valley formed by surrounding PMMA matrix can be detuned by the EF, which induces the changing of electron transfer rates between them effectively. The EF-induced response time of the fluorescence quenching or enhancement and the fluorescence recovery time reflect the diverse polarization and relaxation dynamics of PMMA.
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73.61.Ph Polymers; organic compounds
78.55.Kz Solid organic materials

Radiative damping suppressing and refractive index sensing with elliptical split nanorings

Shao-Ding Liu, Zhi Yang, Rui-Ping Liu, and Xiu-Yan Li

Appl. Phys. Lett. 100, 203119 (2012); http://dx.doi.org/10.1063/1.4719676 (5 pages) | Cited 1 time

Online Publication Date: 17 May 2012

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Radiative damping and refractive index sensing performances of elliptical split nanorings are investigated. The third order resonance can be viewed as two electric dipoles in opposite directions, leading to a cancellation of their dipole moments. The scattering quantum yield decreases from 0.647 to 0.183 by adjusting the outer radii, and the corresponding largest figure of merit of sensing performance is 10.6, which is 61% and 86% larger than the split and perfect rings, respectively. Radiative damping can be further suppressed by increasing the gap size; the scattering quantum yield is decreased to 0.138 when the gap size is 35 nm.
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61.46.-w Structure of nanoscale materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

High sensitivity detection of NO2 and NH3 in air using chemical vapor deposition grown graphene

Fazel Yavari, Eduardo Castillo, Hemtej Gullapalli, Pulickel M. Ajayan, and Nikhil Koratkar

Appl. Phys. Lett. 100, 203120 (2012); http://dx.doi.org/10.1063/1.4720074 (4 pages) | Cited 5 times

Online Publication Date: 18 May 2012

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We show that graphene films synthesized by chemical-vapor-deposition enables detection of trace amounts of nitrogen dioxide (NO2) and ammonia (NH3) in air at room temperature and atmospheric pressure. The gas species are detected by monitoring changes in electrical resistance of the graphene film due to gas adsorption. The sensor response time was inversely proportional to the gas concentration. Heating the film expelled chemisorbed molecules from the graphene surface enabling reversible operation. The detection limits of ∼100 parts-per-billion (ppb) for NO2 and ∼500 ppb for NH3 obtained using our device are markedly superior to commercially available NO2 and NH3 detectors.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.43.Mn Adsorption kinetics
68.55.-a Thin film structure and morphology
73.61.Wp Fullerenes and related materials

Electronic properties of embedded MnAs nano-clusters in a GaAs matrix and (Ga,Mn)As films: Evidence of distinct metallic character

B. Rache Salles, J. C. Girard, C. David, F. Offi, F. Borgatti, M. Eddrief, V. H. Etgens, L. Simonelli, M. Marangolo, and G. Panaccione

Appl. Phys. Lett. 100, 203121 (2012); http://dx.doi.org/10.1063/1.4704778 (4 pages)

Online Publication Date: 18 May 2012

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We investigated the electronic properties of MnAs nano-clusters embedded in GaAs by bulk sensitive photoemission spectroscopy and cross-sectional scanning tunneling microscopy/spectroscopy. We report experimental evidences that the clusters are metallic MnAs, in close resemblance to MnAs thin films, and display a sharp interface with the surrounding GaAs. These results are supported by the comparison with GaMnAs and MnAs film in the same experimental condition. Furthermore, we observe a clear Coulomb blockade effect, as due to confinement and their nanometric size.
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73.22.-f Electronic structure of nanoscale materials and related systems
73.23.Hk Coulomb blockade; single-electron tunneling
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Improved conductivity and long-term stability of sulfur-passivated n-GaAs nanowires

N. Tajik, A. C. E. Chia, and R. R. LaPierre

Appl. Phys. Lett. 100, 203122 (2012); http://dx.doi.org/10.1063/1.4719675 (3 pages) | Cited 4 times

Online Publication Date: 18 May 2012

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The surface passivation of n-type GaAs nanowires (NWs) by ammonium polysulfide solution, (NH4)2Sx, is described. The passivation resulted in a two order of magnitude increase in current density in an ensemble NW device. A depletion and recombination model is used to explain the results in terms of a reduction in surface trap density upon passivation. The results are comparable to a previous passivation method using AlInP shells. The S passivation was found to be unstable according to the degradation in the ensemble NW conductivity after a 7 months exposure to air.
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73.61.Ey III-V semiconductors
81.65.Rv Passivation
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
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