APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 May 2012

Volume 100, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 203104 (2012); http://dx.doi.org/10.1063/1.3701731 (4 pages)

Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee, and Y. He
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Near threshold all-optical backaction amplifier

Terry G. McRae and Warwick P. Bowen

Appl. Phys. Lett. 100, 201101 (2012); http://dx.doi.org/10.1063/1.4717717 (3 pages) | Cited 1 time

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A near threshold all-optical backaction amplifier is realized. Operating near threshold in an integrated micron scale architecture allows a nearly three orders of magnitude improvement in both gain and optical power requirements over the only previous all-optical implementation, with 37 dB of gain achieved for only 12 μW of input power. Minor parameter adjustment allows narrowband optical filtering.
Show PACS
42.55.Wd Fiber lasers
42.79.Ci Filters, zone plates, and polarizers
Author Select

Thermo-optic switch based on transmission-dip shifting in a double-slot photonic crystal waveguide

Kaiyu Cui, Qiang Zhao, Xue Feng, Yidong Huang, Yongzhuo Li, Da Wang, and Wei Zhang

Appl. Phys. Lett. 100, 201102 (2012); http://dx.doi.org/10.1063/1.4718353 (4 pages) | Cited 4 times

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Optical switch based on an ultra-compact double-slot photonic crystal waveguide (DS-PCWG) with a titanium/aluminum microheater is demonstrated. The operating principle relies on shifting a transmission-dip caused by the defect mode coupling in photonic band gap (PBG). Based on the unique mode coupling in PBG, low switching power of 9.2 mW and high extinction ratio of 17 dB are achieved experimentally while the length of DS-PCWG is only 16 μm.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

Silicon fab-compatible contacts to n-InP and p-InGaAs for photonic applications

S. Jain, M. Sysak, M. Swaidan, and J. Bowers

Appl. Phys. Lett. 100, 201103 (2012); http://dx.doi.org/10.1063/1.4714725 (4 pages)

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on silicon fab-compatible non-gold ohmic contacts to n-InP and p-InGaAs using Ti/W and Pd/Ge/W based metallization schemes where gold is replaced by aluminum as a thick probe layer. Specific contact resistivity of <1 × 10−7 Ω cm2 and < 2 × 10−6 Ω cm2 is obtained on n-InP and p-InGaAs after 450 °C anneal using circular transmission line model (CTLM) patterns. In addition, by varying the atomic ratio of Pd/Ge we, propose a common metal contact to both group III–V epitaxial layers with a specific contact resistivity <1 × 10−5 Ω cm2.
Show PACS
42.82.-m Integrated optics
73.40.Cg Contact resistance, contact potential

Control of tensile strain in germanium waveguides through silicon nitride layers

A. Ghrib, M. de Kersauson, M. El Kurdi, R. Jakomin, G. Beaudoin, S. Sauvage, G. Fishman, G. Ndong, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud

Appl. Phys. Lett. 100, 201104 (2012); http://dx.doi.org/10.1063/1.4718525 (4 pages) | Cited 2 times

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Germanium ridge waveguides can be tensilely strained using silicon nitride thin films as stressors. We show that the strain transfer in germanium depends on the width of the waveguides. Carrier population in the zone center Γ valley can also be significantly increased when the ridges are oriented along the 〈100〉 direction. We demonstrate an uniaxial strain transfer up to 1% observed on the room temperature direct band gap photoluminescence of germanium. The results are supported by 30 band k·p modeling of the electronic structure and the finite element modeling of the strain field.
Show PACS
42.79.Gn Optical waveguides and couplers

Plasmons in electrostatically doped graphene

Sukosin Thongrattanasiri, Iván Silveiro, and F. Javier García de Abajo

Appl. Phys. Lett. 100, 201105 (2012); http://dx.doi.org/10.1063/1.4714688 (4 pages) | Cited 5 times

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Graphene has raised high expectations as a low-loss plasmonic material in which the plasmon properties can be controlled via electrostatic doping. Here, we analyze realistic configurations, which produce inhomogeneous doping, in contrast to what has been so far assumed in the study of plasmons in nanostructured graphene. Specifically, we investigate backgated ribbons, co-planar ribbon pairs placed at opposite potentials, and individual ribbons subject to a uniform electric field. Plasmons in backgated ribbons and ribbon pairs are similar to those of uniformly doped ribbons, provided the Fermi energy is appropriately scaled to compensate for finite-size effects such as the divergence of the carrier density at the edges. In contrast, the plasmons of a ribbon exposed to a uniform field exhibit distinct dispersion and spatial profiles that considerably differ from uniformly doped ribbons. Our results provide a road map to understand graphene plasmons under realistic electrostatic doping conditions.
Show PACS
73.22.Pr Electronic structure of graphene
71.20.Tx Fullerenes and related materials; intercalation compounds
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.80.Vp Electronic transport in graphene

Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes

Zonghui Su, Li Huang, Fang Liu, Justin P. Freedman, Lisa M. Porter, Robert F. Davis, and Jonathan A. Malen

Appl. Phys. Lett. 100, 201106 (2012); http://dx.doi.org/10.1063/1.4718354 (4 pages) | Cited 2 times

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thermal conductivities (k) of the individual layers of a GaN-based light emitting diode (LED) were measured along [0001] using the 3-omega method from 100-400 K. Base layers of AlN, GaN, and InGaN, grown by organometallic vapor phase epitaxy on SiC, have effective k much lower than bulk values. The 100 nm thick AlN layer has k = 0.93 ± 0.16 W/mK at 300 K, which is suppressed >100 times relative to bulk AlN. Transmission electron microscope images revealed high dislocation densities (4 × 1010 cm−2) within AlN and a severely defective AlN-SiC interface that cause additional phonon scattering. Resultant thermal resistances degrade LED performance and lifetime making layer-by-layer k, a critical design metric for LEDs.
Show PACS
66.70.Df Metals, alloys, and semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
85.60.Jb Light-emitting devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Color control through plasmonic metal gratings

M. A. Vincenti, M. Grande, D. de Ceglia, T. Stomeo, V. Petruzzelli, M. De Vittorio, M. Scalora, and A. D’Orazio

Appl. Phys. Lett. 100, 201107 (2012); http://dx.doi.org/10.1063/1.4718764 (4 pages) | Cited 3 times

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We experimentally demonstrate the color tuning abilities of two-dimensional periodic arrays of gold nano-patches on silicon substrate. We observe that changes in the geometrical parameters of the array can shift significantly the plasmonic resonance that occurs at the edge of the plasmonic band gap. Experimental proof of this shift is provided by the observation of an important change in the color of the diffracted field. Calculations of the diffracted spectra match the observed color changes very well and provide an efficient means for the design of sensing platforms based on color observation.
Show PACS
78.66.Bz Metals and metallic alloys
73.22.Lp Collective excitations
42.79.Dj Gratings
71.20.Be Transition metals and alloys

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Yuji Zhao, Qimin Yan, Chia-Yen Huang, Shih-Chieh Huang, Po Shan Hsu, Shinichi Tanaka, Chih-Chien Pan, Yoshinobu Kawaguchi, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, Shuji Nakamura, and Daniel Feezell

Appl. Phys. Lett. 100, 201108 (2012); http://dx.doi.org/10.1063/1.4719100 (4 pages) | Cited 3 times

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report indium incorporation properties on various nonpolar and semipolar free-standing GaN substrates. Electroluminescence characterization and x-ray diffraction (XRD) analysis indicate that the semipolar (20mathmath) and (11math2) planes have the highest indium incorporation rate among the studied planes. We also show that both indium composition and polarization-related electric fields impact the emission wavelength of the quantum wells (QWs). The different magnitudes and directions of the polarization-related electric fields for each orientation result in different potential profiles for the various semipolar and nonpolar QWs, leading to different emission wavelengths at a given indium composition.
Show PACS
78.60.Fi Electroluminescence
78.67.De Quantum wells

Taming the thermal emissivity of metals: A metamaterial approach

N. Mattiucci, G. D’Aguanno, A. Alù, C. Argyropoulos, J. V. Foreman, and M. J. Bloemer

Appl. Phys. Lett. 100, 201109 (2012); http://dx.doi.org/10.1063/1.4719582 (4 pages) | Cited 1 time

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the possibility of realizing temporally coherent, wide-angle, thermal radiation sources based on the metamaterial properties of metallic gratings. In contrast to other approaches, we do not rely on the excitation of surface waves such as phonon-polaritons, plasmon-polaritons, or guided mode resonances along the grating, nor on the absorption resonances of extremely shallow metallic grating. Instead, we exploit the effective bulk properties of a thick metallic grating below the first diffraction order. We analytically model this physical mechanism of temporally coherent thermal emission based on localized bulk resonances in the grating. We validate our theoretical predictions with full-wave numerical simulations.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Dj Gratings
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.20.N- Thermo-optic effects

Absorption efficiency of gold nanorods determined by quantum dot fluorescence thermometry

L. M. Maestro, P. Haro-González, J. G. Coello, and D. Jaque

Appl. Phys. Lett. 100, 201110 (2012); http://dx.doi.org/10.1063/1.4718605 (4 pages) | Cited 4 times

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work quantum dot fluorescence thermometry, in combination with double-beam confocal microscopy, has been applied to determine the thermal loading of gold nanorods when subjected to an optical excitation at the longitudinal surface plasmon resonance. The absorbing/heating efficiency of low (≈3) aspect ratio gold nanorods has been experimentally determined to be close to 100%, in excellent agreement with theoretical simulations of the extinction, absorption, and scattering spectra based on the discrete dipole approximation.
Show PACS
78.67.Qa Nanorods
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.68.+m Optical properties of surfaces
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
78.55.Hx Other solid inorganic materials

Formation of strong light-trapping nano- and microscale structures on a spherical metal surface by femtosecond laser filament

Haiyan Tao, Jingquan Lin, Zuoqiang Hao, Xun Gao, Xiaowei Song, Changkai Sun, and Xin Tan

Appl. Phys. Lett. 100, 201111 (2012); http://dx.doi.org/10.1063/1.4719108 (3 pages)

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nano- and microscale structures on a material surface formed by femtosecond laser processing have greatly changed optical characteristics, wettability, as well as other properties of the material. In this work, we report the formation of nano- and microscale structures on a spherical Al surface with femtosecond laser filament, and find that the filament-processed surface has a strong light-trapping ability from UV to IR (0.2–2.5 μm). Our result demonstrates that this method can be used to process a spherical surface without the complexity of a 4-axis sample control, and in principle, it is applicable to any non-planar sample.
Show PACS
42.62.-b Laser applications
42.60.-v Laser optical systems: design and operation
42.50.Wk Mechanical effects of light on material media, microstructures and particles
42.82.-m Integrated optics

Accurate in-situ gas temperature measurements in dielectric barrier discharges at atmospheric pressure

Michael R. Wertheimer, Meenu Ahlawat, Bachir Saoudi, and Raman Kashyap

Appl. Phys. Lett. 100, 201112 (2012); http://dx.doi.org/10.1063/1.4719208 (4 pages)

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Atmospheric pressure (AP) dielectric barrier discharges are frequently of interest for treating delicate substrates such as polymers or biological materials. In spite of its capital importance, thermometry in AP plasmas is subject to much uncertainty. We report temperature measurements in noble gases, nitrogen, and air using sensitive, accurate fibre-optic instrumentation that is a priori immune towards high voltages and high-frequency electromagnetic fields generally encountered in plasma environments.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.-s Electric discharges
07.20.Dt Thermometers
52.25.-b Plasma properties

Experimental verification of the concept of all-dielectric nanoantennas

Dmitry S. Filonov, Alexander E. Krasnok, Alexey P. Slobozhanyuk, Polina V. Kapitanova, Elizaveta A. Nenasheva, Yuri S. Kivshar, and Pavel A. Belov

Appl. Phys. Lett. 100, 201113 (2012); http://dx.doi.org/10.1063/1.4719209 (4 pages) | Cited 6 times

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Being motivated by the recent theoretical proposal of nanoantennas based on high-permittivity dielectric spheres [A. E. Krasnok et al., JETP Lett. 94, 22113 (2011)], we suggest and verify experimentally the concept of all-dielectric antennas in the microwave frequency range. In addition to the electric resonance, each sphere exhibits a very strong magnetic resonance, resulting in a narrow radiation pattern and overall high directivity of such antennas. We find an excellent agreement between the experimental data and numerical results and verify directly high-performance characteristics of such all-dielectric antennas potentially scalable to the nanoscale and operation at the optical frequency range.
Show PACS
42.79.-e Optical elements, devices, and systems
42.82.-m Integrated optics
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Efficient terahertz generation by optical rectification in Si-LiNbO3-air-metal sandwich structure with variable air gap

Sergey B. Bodrov, Igor E. Ilyakov, Boris V. Shishkin, and Andrey N. Stepanov

Appl. Phys. Lett. 100, 201114 (2012); http://dx.doi.org/10.1063/1.4719674 (3 pages) | Cited 3 times

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A record high optical-to-terahertz conversion efficiency of 0.25% was realized with femtosecond laser pulses propagated in a planar Si-LiNbO3-air-metal structure. Terahertz spectrum tuning was demonstrated by adjusting an air gap between the LiNbO3 layer and the metal plate. The influence of optical pulse chirp on the efficiency of terahertz generation was investigated.
Show PACS
85.30.Tv Field effect devices
84.40.-x Radiowave and microwave (including millimeter wave) technology

In situ etched gratings embedded in AlGaAs for efficient high power 970 nm distributed feedback broad-area lasers

C. M. Schultz, P. Crump, A. Maaßdorf, O. Brox, F. Bugge, A. Mogilatenko, H. Wenzel, S. Knigge, B. Sumpf, M. Weyers, G. Erbert, and G. Tränkle

Appl. Phys. Lett. 100, 201115 (2012); http://dx.doi.org/10.1063/1.4718916 (5 pages) | Cited 1 time

Online Publication Date: 18 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report optical nanostructuring technology, developed for distributed feedback gratings, broadly useable for many applications. The nanostructure is pre-structured into aluminum-free layers on top of AlGaAs then etched inside the epitaxy reactor and overgrown with AlGaAs. Oxygen contamination at the grating-interface is ∼3 × 1011 cm−2. These gratings introduce no extra internal optical loss and series resistance in broad-area lasers. Distributed feedback broad-area lasers using this technology achieve optical power >12 W, peak efficiency >60%, wide spectral locking range in current and heatsink temperature (over at least ∼30 °C) and operate at 10 W for >5000 h in a preliminary reliability test.
Show PACS
42.55.-f Lasers
42.79.Dj Gratings
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close