APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 May 2012

Volume 100, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 203104 (2012); http://dx.doi.org/10.1063/1.3701731 (4 pages)

Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee, and Y. He
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Partially filled intermediate band of Cr-doped GaN films

S. Sonoda

Appl. Phys. Lett. 100, 202101 (2012); http://dx.doi.org/10.1063/1.4717716 (4 pages) | Cited 1 time

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.
Show PACS
81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering
88.40.jm Thin film III-V and II-VI based solar cells
71.20.Nr Semiconductor compounds
78.66.Fd III-V semiconductors
79.60.Dp Adsorbed layers and thin films

Electronic effects of Se and Pb dopants in TlBr

Holland M. Smith, III, David J. Phillips, Ian D. Sharp, Jeffrey W. Beeman, Daryl C. Chrzan, Nancy M. Haegel, Eugene E. Haller, Guido Ciampi, Hadong Kim, and Kanai S. Shah

Appl. Phys. Lett. 100, 202102 (2012); http://dx.doi.org/10.1063/1.4712596 (4 pages) | Cited 2 times

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Deep levels in Se- and Pb-doped bulk TlBr detectors were characterized with photo-induced conductivity transient spectroscopy (PICTS) and cathodoluminescence (CL). Se-doped TlBr revealed two traps with energies of 0.35 and 0.45 eV in PICTS spectra. The Pb-doped material revealed three levels with energies of 0.11, 0.45, and 0.75 eV. CL measurements in both materials correlate with optical transitions involving some of the identified levels. The ambipolar carrier lifetimes of Se-doped and Pb-doped TlBr were measured with microwave reflectivity transients and found to be significantly lower than the lifetime of undoped TlBr.
Show PACS
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Hk Cathodoluminescence, ionoluminescence
71.20.Nr Semiconductor compounds

Trace analysis of non-basal plane misfit stress relaxation in (20math1) and (30mathmath) semipolar InGaN/GaN heterostructures

Matthew T. Hardy, Po Shan Hsu, Feng Wu, Ingrid L. Koslow, Erin C. Young, Shuji Nakamura, Alexey E. Romanov, Steven P. DenBaars, and James S. Speck

Appl. Phys. Lett. 100, 202103 (2012); http://dx.doi.org/10.1063/1.4716465 (4 pages) | Cited 9 times

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied primary and secondary slip systems in the relaxation of lattice mismatch stresses in (20math1) and (30mathmath) semipolar InxGa1−xN/GaN heterostructures by analyzing the geometry of traces associated with dislocations employing cathodoluminescence, x-ray diffraction, and transmission electron microscopy. For (20math1) InxGa1−xN/GaN heterostructures, the primary relaxation is by dislocation glide on the c-plane 11math0(0001) slip system and secondary relaxation is by dislocation glide on inclined planes including the m-plane 〈11math0〉{1math00} slip system. For (30mathmath) grown heterostructures non-basal slip, namely dislocation glide on the m-plane slip system, is the initial stress relaxation pathway.
Show PACS
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.Ct Interface structure and roughness
78.60.Hk Cathodoluminescence, ionoluminescence

Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

V. V. Afanas’ev, H.-Y. Chou, N. H. Thoan, C. Adelmann, H. C. Lin, M. Houssa, and A. Stesmans

Appl. Phys. Lett. 100, 202104 (2012); http://dx.doi.org/10.1063/1.4710553 (4 pages) | Cited 1 time

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Low barriers for electrons are found to be the reason for significant charge instability at interfaces of (100)InP and (100)In0.53Ga0.47As with atomic-layer deposited TaSiOx insulators. The formation of these reduced barriers is associated with the growth of a narrow-bandgap interlayer between the semiconductor and TaSiOx, which enables electron tunneling at low electric fields and subsequent trapping in the insulator. A wide-gap passivation layer may be required to improve the performance of TaSiOx as gate insulator.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations

M. Baranowski, R. Kudrawiec, M. Latkowska, M. Syperek, J. Misiewicz, and J. A. Gupta

Appl. Phys. Lett. 100, 202105 (2012); http://dx.doi.org/10.1063/1.4714739 (5 pages) | Cited 1 time

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Time resolved photoluminescence (PL) spectroscopy has been applied to study dynamics of localized excitons in a single Ga0.7In0.3N0.015As0.985/GaAs quantum well (QW). The decay time constant, τPL, has been determined for different PL peak energies at various temperatures. An increase in temperature produced two effects: (i) a reduction of τPL and (ii) changes in the τPL dispersion. These two experimental observations as well as the shape of PL decay curves were very well reproduced by Monte-Carlo simulations of hopping excitons with parameters derived from PL and photoreflectance measurements for this QW.
Show PACS
78.67.De Quantum wells
78.47.J- Ultrafast spectroscopy (<1 psec)
78.47.D- Time resolved spectroscopy (>1 psec)
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

Pradipta K. Nayak, M. N. Hedhili, Dongkyu Cha, and H. N. Alshareef

Appl. Phys. Lett. 100, 202106 (2012); http://dx.doi.org/10.1063/1.4718022 (4 pages) | Cited 3 times

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.
Show PACS
85.30.Tv Field effect devices
81.05.Gc Amorphous semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments

Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Lachlan E. Black and Keith R. McIntosh

Appl. Phys. Lett. 100, 202107 (2012); http://dx.doi.org/10.1063/1.4718596 (5 pages)

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Atmospheric pressure chemical vapor deposition of Al2O3 is shown to provide excellent passivation of crystalline silicon surfaces. Surface passivation, permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 1012 cm−2) and a relatively low interface defect density (∼1 × 1011 eV−1 cm−2), with or without an anneal. The influence of deposition temperature on film properties is found to persist after subsequent heat treatment. Correlations between surface passivation properties and the permittivity are discussed.
Show PACS
81.65.Rv Passivation
77.22.Ch Permittivity (dielectric function)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.Cc Kinetics of defect formation and annealing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes

Yue Lin, Yu-Lin Gao, Yi-Jun Lu, Li-Hong Zhu, Yong Zhang, and Zhong Chen

Appl. Phys. Lett. 100, 202108 (2012); http://dx.doi.org/10.1063/1.4718612 (4 pages) | Cited 2 times

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the current and temperature dependence of GaN-based high power blue light-emitting diodes and identify a set of temperature sensitive optical parameters (TSOPs) that can provide a real-time solution for determining the junction temperature (Tj). The relationships among Tj, forward current and TSOPs, “center of mass” wavelength, and, in particular, full width at half maximum (FWHM) have been studied, and the relevant mathematic models have been developed. The analysis indicates that using FWHM may yield higher accuracy than using other parameters as TSOPs.
Show PACS
85.60.Jb Light-emitting devices

Control of supercurrent in a self-assembled InAs quantum dot Josephson junction by electrical tuning of level overlaps

Y. Kanai, R. S. Deacon, A. Oiwa, K. Yoshida, K. Shibata, K. Hirakawa, and S. Tarucha

Appl. Phys. Lett. 100, 202109 (2012); http://dx.doi.org/10.1063/1.4719072 (3 pages)

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study supercurrent in a single InAs self-assembled quantum dot contacted with superconducting leads and demonstrate that for regions where energy level spacing and charging energy are smaller than tunnel coupling, the supercurrent may be controlled by the degree of overlaps between energy levels, which is tunable using a side-gate electrode. In such regions, we find strong correlation between the supercurrent and the normal state conductance when the device parameters are tuned. In a Kondo regime with low Kondo temperature, we find that the scaling of the supercurrent and normal state conductance varies when the side-gate voltage is changed.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.fc Electric and thermal conductivity
73.63.Kv Quantum dots
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close