APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 May 2012

Volume 100, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 203104 (2012); http://dx.doi.org/10.1063/1.3701731 (4 pages)

Z. Y. Jiang, X. X. Jiang, S. Su, X. P. Wei, S. T. Lee, and Y. He
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

A pathway between Bernal and rhombohedral stacked graphene layers with scanning tunneling microscopy

P. Xu, Yurong Yang, D. Qi, S. D. Barber, M. L. Ackerman, J. K. Schoelz, T. B. Bothwell, Salvador Barraza-Lopez, L. Bellaiche, and P. M. Thibado

Appl. Phys. Lett. 100, 201601 (2012); http://dx.doi.org/10.1063/1.4716475 (4 pages) | Cited 3 times

Online Publication Date: 14 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Horizontal shifts in the top layer of highly oriented pyrolytic graphite, induced by a scanning tunneling microscope (STM) tip, are presented. Excellent agreement is found between STM images and those simulated using density functional theory. First-principle calculations identify that the low-energy barrier direction of the top layer displacement is toward a structure where none of the carbon pz orbitals overlap, while the high-energy barrier direction is toward AA stacking. Each directional shift yields a real-space surface charge density similar to graphene; however, the low-energy barrier direction requires only one bond length to convert ABA (Bernal) to ABC (rhombohedral).
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
61.48.Gh Structure of graphene

Relief of surface stress at steps during displacive adsorption of As on Si(111)

C. X. Zheng, W. X. Tang, and D. E. Jesson

Appl. Phys. Lett. 100, 201602 (2012); http://dx.doi.org/10.1063/1.4718305 (4 pages)

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The displacive adsorption of As on 1 × 1 Si(111) is examined using surface electron microscopy. High temperature adsorption experiments are used to reduce the As chemical potential and identify regions of enhanced As incorporation in the vicinity of steps. This is explained by a reduction in tensile surface stress associated with 1 × 1 As:Si(111). Cycling the incident As flux on and off creates surface roughening via respective displacive adsorption and evaporation of As. This roughness facilitates increased 1 × 1 As:Si(111) coverage during As deposition due to surface stress relief at steps.
Show PACS
68.35.Gy Mechanical properties; surface strains
68.43.Fg Adsorbate structure (binding sites, geometry)
68.47.Fg Semiconductor surfaces
61.72.uf Ge and Si
68.35.bg Semiconductors
68.35.Dv Composition, segregation; defects and impurities

Combined microscopies study of the C-contamination induced by extreme-ultraviolet radiation: A surface-dependent secondary-electron-based model

S. Prezioso, M. Donarelli, F. Bisti, L. Palladino, S. Santucci, S. Spadoni, L. Avaro, A. Liscio, V. Palermo, and L. Ottaviano

Appl. Phys. Lett. 100, 201603 (2012); http://dx.doi.org/10.1063/1.4714774 (4 pages) | Cited 1 time

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
SiO2 and Al2O3 surfaces exposed to periodically modulated extreme ultraviolet (EUV) light (λ = 46.9 nm) have been investigated at the μm scale by optical microscopy, scanning electron microscopy, scanning Auger microscopy, atomic force microscopy, and Kelvin probe force microscopy. The formation of a carbon contamination layer preserving the same periodical modulation of the EUV dose has been observed. The mechanisms of hydrocarbon molecules deposition have been studied with the help of correlation plots between the modulated Auger signal and the corresponding EUV dose. A surface-dependent secondary-electron-based model has been proposed.
Show PACS
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Ps Atomic force microscopy (AFM)
81.65.-b Surface treatments

Metal-like conductivity exhibited by triboelectrically deposited polyaniline (emeraldine base) particles on microtextured SiC surfaces

I. S. Bayer, V. Caramia, A. Biswas, R. Cingolani, and A. Athanassiou

Appl. Phys. Lett. 100, 201604 (2012); http://dx.doi.org/10.1063/1.4717465 (5 pages) | Cited 1 time

Online Publication Date: 15 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate a simple and rapid way to deposit layers of polyaniline (emeraldine base) particles on flexible microtextured silicon carbide surfaces by contact charging them using a smooth dielectric rubber. Wetting of the layers by trifluoroacetic acid creates conductive, continuous polymeric films after drying. Pre-functionalization of the textured surfaces with anionic surfactants prevents particle coagulation during contact charging and decreases sheet resistance to metal-like levels (∼60 Ω/□). Conductivity of the films can be tuned by controlling the rate of acid evaporation. Conductive films are highly stable under ambient conditions and show no hysteresis when biased with zero delay-time.
Show PACS
82.35.Gh Polymers on surfaces; adhesion
68.55.jm Texture
61.41.+e Polymers, elastomers, and plastics
68.08.Bc Wetting
73.40.Cg Contact resistance, contact potential
73.61.Ph Polymers; organic compounds

Interfacial interaction of gas molecules and single-walled carbon nanotubes

Jun Zhong, Jauwern Chiou, Chungli Dong, Per-Anders Glans, Way-Faung Pong, Chinglin Chang, Ziyu Wu, and Jinghua Guo

Appl. Phys. Lett. 100, 201605 (2012); http://dx.doi.org/10.1063/1.4718421 (4 pages) | Cited 2 times

Online Publication Date: 16 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The interfacial interaction between single-walled carbon nanotubes (SWNTs) and various gas molecules (H2, He, and N2) at different pressures has been probed by in situ x-ray absorption near-edge structure (XANES) spectroscopy. Experimental results reveal the different strength of interfacial interaction (involving external and internal collisions) between SWNTs and various gas molecules under different pressures. At gas pressures higher than 5 Torr, the unoccupied states of SWNTs show some features corresponding to the structure deformation with a reversible behavior when cycling under vacuum and gas conditions. The XANES study for different gases (H2, He, and N2) shows a strong dependence of gas molecular weight, which provides experimental evidence to the gas scattering mechanism.
Show PACS
78.70.Dm X-ray absorption spectra
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy

M. Gaowei, E. M. Muller, A. K. Rumaiz, C. Weiland, E. Cockayne, J. Jordan-Sweet, J. Smedley, and J. C. Woicik

Appl. Phys. Lett. 100, 201606 (2012); http://dx.doi.org/10.1063/1.4718028 (4 pages) | Cited 3 times

Online Publication Date: 17 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Hard x-ray photoelectron spectroscopy was applied to investigate the diamond-metal Schottky barrier heights for several metals and diamond surface terminations. The position of the diamond valence-band maximum was determined by theoretically calculating the diamond density of states and applying cross section corrections. The diamond-platinum Schottky barrier height was lowered by 0.2 eV after thermal annealing, indicating annealing may increase carrier injection in diamond devices leading to photoconductive gain. The platinum contacts on oxygen-terminated diamond was found to provide a higher Schottky barrier and therefore a better blocking contact than that of the silver contact in diamond-based electronic devices.
Show PACS
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
71.20.Mq Elemental semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions

High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

S. Nazir, M. Upadhyay Kahaly, and U. Schwingenschlögl

Appl. Phys. Lett. 100, 201607 (2012); http://dx.doi.org/10.1063/1.4719106 (4 pages)

Online Publication Date: 18 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer ( ∼ 4.9Å) with a considerable carrier density of ∼ 1014cm-2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.
Show PACS
73.40.-c Electronic transport in interface structures
73.20.Qt Electron solids
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close