APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

Applied Physics Letters / Volume 100 / Issue 21 / DEVICE PHYSICS

Appl. Phys. Lett. 100, 213505 (2012); http://dx.doi.org/10.1063/1.4717751 (4 pages)

Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

Jin-Woo Han1, Jae Sub Oh2, and M. Meyyappan1

1Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, USA
2National Nanofab Center, 335 Gwahangno, Yuseong-gu, Daejeon 305-806, Korea

View MapView Map

(Received 24 February 2012; accepted 22 April 2012; published online 23 May 2012)

A gate-insulated vacuum channel transistor was fabricated using standard silicon semiconductor processing. Advantages of the vacuum tube and transistor are combined here by nanofabrication. A photoresist ashing technique enabled the nanogap separation of the emitter and the collector, thus allowing operation at less than 10 V. A cut-off frequency fT of 0.46 THz has been obtained. The nanoscale vacuum tubes can provide high frequency/power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh conditions, and the operation voltage can be decreased comparable to the modern semiconductor devices.

© 2012 American Institute of Physics

RELATED DATABASES

Web of Science

View this record in Web of Science

View Web of Science related articles

KEYWORDS, PACS, and IPC

Keywords

elemental semiconductors, high-frequency effects, MOSFET, nanoelectronics, nanofabrication, photoresists, silicon, vacuum tubes

PACS

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • G03F7/00

    Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

  • H01L29/00

    Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.4717751

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.

    References

    A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, Appl. Phys. Lett. 71, 2845–2847 (1997)APPLAB000071000021003159000001.

    A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, Appl. Phys. Lett. 71, 3159 (1997)APPLAB000071000021003159000001.

    Z. Xu, X. D. Bai, and E. G. Wang, Appl. Phys. Lett. 88, 133107 (2006)APPLAB000088000013133107000001.

    A. Malesevic, R. Kemps, A. Vanhulsel, M. P. Chowdhury, A. Volodin, and C. V. Haesendonck, J. Appl. Phys. 104, 084301 (2008)JAPIAU000104000008084301000001.


Figures (4)

Figures (click on thumbnails to view enlargements)

FIG.1
Structures of vacuum devices and analogues to conventional MOSFET. (a) Vertical field-emitter, (b) planar lateral field-emitter, (c) MOSFET, and (d) gate-insulated air channel transistor.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Top view of SEM images of the photoresist. Initial resist with a line width of 180 nm was trimmed down to (a) 60 nm and (b) 30 nm. (c) Further trimming resulted in two separated patterns with a sharp concave tip. (d) Subsequent resist reflow process softened and rounded by the thermal reflow.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Energy band diagram of the vacuum channel transistor for (a) VG < Vturn-on and (b) VG > Vturn-on.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
(a) Simulation results for the turn-on voltage for two different emitter shapes; square symbols for hemiellipsoid tips and circle symbols for sharp tips. The difference in turn-on voltage for the two structures becomes reduced as the emitter-to-collector distance decreases. (b) Ic–Vg for Vc = 10 V, (c) Ic–Vc characteristics for Vg = 5, 6, 7, and 8 V, and (d) Ig–Vg characteristics for Vc = 10 V.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
Go to AIP Home   © AIP Publishing LLC
close