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Appl. Phys. Lett. 100, 213505 (2012); http://dx.doi.org/10.1063/1.4717751 (4 pages)
Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor
(Received 24 February 2012; accepted 22 April 2012; published online 23 May 2012)
© 2012 American Institute of Physics
KEYWORDS, PACS, and IPC
International Patent Classification (IPC)
Manufacture or treatment of nano-structures
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
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