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21 May 2012

Volume 100, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 100, 213701 (2012); http://dx.doi.org/10.1063/1.3701135 (4 pages)

Wen Lo, Ara Ghazaryan, Chien-Hsin Tso, Po-Sheng Hu, Wei-Liang Chen, Tsung-Rong Kuo, Sung-Jan Lin, Shean-Jen Chen, Chia-Chun Chen, and Chen-Yuan Dong
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Pure low-frequency flexural mode of [011]c poled relaxor-PbTiO3 single crystals excited by k32 mode

Gang Liu, Wenhua Jiang, Jiaqi Zhu, and Wenwu Cao

Appl. Phys. Lett. 100, 213501 (2012); http://dx.doi.org/10.1063/1.4720150 (4 pages)

Online Publication Date: 21 May 2012

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Rhombohedral phase relaxor-PbTiO3 solid solution single crystals poled along [011]c exhibits superior lateral extensional piezoelectric response, which enables the excitation of a pure low frequency flexural mode with a bridge-type electrode configuration. For the ternary 0.24Pb(In1/2Nb1/2) O3-0.46Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 single crystal poled along [011]c, the electromechanical coupling factor of the flexural mode reached as high as 0.66, and the resonance frequency of this mode can be easily made in kHz range, making it possible to fabricate very small size low frequency sensors and actuators. We have delineated theoretically the coupling between flexural mode and other modes and realized a strong pure flexure mode.
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77.80.Jk Relaxor ferroelectrics
77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

K. G. Rana, V. Khikhlovskyi, and T. Banerjee

Appl. Phys. Lett. 100, 213502 (2012); http://dx.doi.org/10.1063/1.4720516 (3 pages) | Cited 1 time

Online Publication Date: 21 May 2012

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We have investigated electron transport in Nb doped SrTiO3 single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO2 terminated n-type SrTiO3. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.
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73.40.Ns Metal-nonmetal contacts
79.40.+z Thermionic emission
61.72.up Other materials
73.30.+y Surface double layers, Schottky barriers, and work functions

Inverted bi-prism phononic crystals for one-sided elastic wave transmission applications

Joo Hwan Oh, Hoe Woong Kim, Pyung Sik Ma, Hong Min Seung, and Yoon Young Kim

Appl. Phys. Lett. 100, 213503 (2012); http://dx.doi.org/10.1063/1.4721485 (4 pages) | Cited 1 time

Online Publication Date: 21 May 2012

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This work presents the realization of one-sided wave transmission by using a specially engineered phononic crystal structure. It is an inverted bi-prism phononic crystal engineered for a horizontally incident elastic wave at a specific frequency. The incident wave along one direction is shown to be totally reflected by the bi-prism while the incident wave along the opposite direction transmitted through it with refraction, also evident from experiments. An application of the proposed bi-prism may be found in thin elastic strips.
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63.20.-e Phonons in crystal lattices
62.30.+d Mechanical and elastic waves; vibrations

Buried-heterostructure quantum-cascade laser overgrown by gas-source molecular-beam epitaxy

M. Chashnikova, G. Monastyrskyi, A. Aleksandrova, M. Klinkmüller, M. P. Semtsiv, and W. T. Masselink

Appl. Phys. Lett. 100, 213504 (2012); http://dx.doi.org/10.1063/1.4719109 (4 pages) | Cited 3 times

Online Publication Date: 21 May 2012

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We describe the realization of buried-heterostructure quantum-cascade lasers (QCLs) using gas-source molecular beam epitaxy both for the growth of the active region as well as for the regrowth of InP:Fe. The regrowth of the semi-insulating InP:Fe layer was carried out at 470 °C, which is more than 100 °C below the standard growth temperature during metal-organic vapor-phase epitaxy, the standard method for laser overgrowth. The electrical resistivity of the InP:Fe insulation layer, measured in test samples grown on (001) InP, is as large as 2×108Ωcm. High-resistivity InP:Fe is overgrown non-selectively over the etched laser ridge, followed by the top contact alloyed through it to the active region. The processed quantum-cascade lasers show no evidence of parallel leakage current and exhibit lower threshold current density than lasers using SiO2 as an insulator. The ability to fabricate buried heterostructure lasers without exceeding 600 °C is important for strain-compensated AlAs-InGaAs quantum cascade lasers with large internal strain because these devices do not typically withstand temperatures used to grow InP:Fe using vapor-phase epitaxy.
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42.55.Px Semiconductor lasers; laser diodes
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Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

Jin-Woo Han, Jae Sub Oh, and M. Meyyappan

Appl. Phys. Lett. 100, 213505 (2012); http://dx.doi.org/10.1063/1.4717751 (4 pages)

Online Publication Date: 23 May 2012

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A gate-insulated vacuum channel transistor was fabricated using standard silicon semiconductor processing. Advantages of the vacuum tube and transistor are combined here by nanofabrication. A photoresist ashing technique enabled the nanogap separation of the emitter and the collector, thus allowing operation at less than 10 V. A cut-off frequency fT of 0.46 THz has been obtained. The nanoscale vacuum tubes can provide high frequency/power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh conditions, and the operation voltage can be decreased comparable to the modern semiconductor devices.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5

P. Fantini, M. Ferro, A. Calderoni, and S. Brazzelli

Appl. Phys. Lett. 100, 213506 (2012); http://dx.doi.org/10.1063/1.4720182 (4 pages) | Cited 3 times

Online Publication Date: 23 May 2012

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This work investigates the atomic structural relaxation accounting for the resistance drift of the amorphous phase of the Ge2Sb2Te5 (α-GST) chalcogenide alloy. A joint electrical and optical characterization over time on both the phase change memory cell in the reset state and the as-deposited amorphous GST film has been performed to elucidate the origin of the drift phenomenon. We highlight that the drift mechanism is ascribed to the removal of residual resonant-like bonding in the amorphous network, lowering the electronic component of the dielectric constant (ɛ∞) and leading to a progressive loosing of any medium-range order.
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61.43.Dq Amorphous semiconductors, metals, and alloys
73.61.Jc Amorphous semiconductors; glasses
68.55.ag Semiconductors
78.66.Jg Amorphous semiconductors; glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)

High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes

J. Leroy, A. Crunteanu, A. Bessaudou, F. Cosset, C. Champeaux, and J.-C. Orlianges

Appl. Phys. Lett. 100, 213507 (2012); http://dx.doi.org/10.1063/1.4721520 (4 pages) | Cited 2 times

Online Publication Date: 23 May 2012

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We report the fabrication of VO2-based two terminal devices with ∼125-nm gaps between the two electrodes, using a simple, cost-effective method employing optical lithography and shadow evaporation. Current-voltage characteristics of the obtained devices show a main abrupt metal-insulator transition (MIT) in the VO2 film with voltage threshold values of several volts, followed by secondary MIT steps due to the nanostructured morphology of the layer. By applying to the two-terminal device a pulsed voltage over the MIT threshold, the measured switching time was as low as 4.5 ns and its value does not significantly change with device temperature, supporting the evidence of an electronically driven MIT.
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85.30.Tv Field effect devices

Schottky diode with excellent performance for large integration density of crossbar resistive memory

Gun Hwan Kim, Jong Ho Lee, Jeong Hwan Han, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Tae Joo Park, and Cheol Seong Hwang

Appl. Phys. Lett. 100, 213508 (2012); http://dx.doi.org/10.1063/1.4722784 (3 pages) | Cited 6 times

Online Publication Date: 24 May 2012

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A Schottky diode (SD) with Au/Pt/TiO2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 106 @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 105 A/cm2 @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.
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85.30.Kk Junction diodes

A multi-frequency sandwich type electromagnetic vibration energy harvester

Jingdong Chen, Di Chen, Tao Yuan, and Xiang Chen

Appl. Phys. Lett. 100, 213509 (2012); http://dx.doi.org/10.1063/1.4722814 (4 pages)

Online Publication Date: 24 May 2012

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We proposed a multi-frequency sandwich type vibration energy harvester to widen the effective frequency range of vibration energy harvester. The harvester is composed of three resonant structures with different natural frequencies. The resonant structures are two cantilevers each with bi-layer coils and a plane spring with a magnet. The maximum peak-peak voltages of the three different frequencies are 172 mV, 104 mV, and 112 mV at the frequencies of 235 Hz, 330 Hz, and 430 Hz, respectively. The first maximum voltage is much higher than the others, because the coils in both cantilevers can produce voltages.
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84.60.-h Direct energy conversion and storage
89.20.Kk Engineering

Piezoresistive strain sensing using carbon nanotube forests suspended by Parylene-C membranes

Anas Bsoul, Mohamed Sultan Mohamed Ali, Alireza Nojeh, and Kenichi Takahata

Appl. Phys. Lett. 100, 213510 (2012); http://dx.doi.org/10.1063/1.4721460 (3 pages)

Online Publication Date: 24 May 2012

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We present a strain gauge that uses a carbon nanotube (CNT) forest, partially embedded in a Parylene-C membrane, as a piezoresistor. The device exhibits high sensitivity with a gauge factor of 4.52 or higher for strains up to ∼1.5%, offering much higher sensitivity in the strain range than those reported for other types of CNT-forest/polymer composite piezoresistors. The gauge also shows a linear response to bending strains generated by forces applied perpendicularly to the membrane with a 55-ppm/mN sensitivity. These findings suggest promising characteristics for a variety of sensing applications of the CNT-forest/Parylene film.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
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