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21 May 2012

Volume 100, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 100, 213701 (2012); http://dx.doi.org/10.1063/1.3701135 (4 pages)

Wen Lo, Ara Ghazaryan, Chien-Hsin Tso, Po-Sheng Hu, Wei-Liang Chen, Tsung-Rong Kuo, Sung-Jan Lin, Shean-Jen Chen, Chia-Chun Chen, and Chen-Yuan Dong
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Tunable magnetoelectric response of dimensionally gradient laminate composites

C.-S. Park, D. Avirovik, M. I. Bichurin, V. M. Petrov, and S. Priya

Appl. Phys. Lett. 100, 212901 (2012); http://dx.doi.org/10.1063/1.4720095 (5 pages) | Cited 1 time

Online Publication Date: 21 May 2012

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A magnetoelectric (ME) sensor exhibiting wideband behavior as a function of applied magnetic DC bias and frequency was designed by combining the dimensionally gradient piezoelectric layer with Metglas magnetostrictive layers in laminate configuration. The ME coefficient of the band in the DC magnetic range of 52–242 Oe was measured to be 3000 mV/cm Oe under the resonant condition of f = 107 kHz. The wideband in the AC magnetic field frequency range of 41–110 kHz had the ME coefficient in the vicinity of 260 mV/cm Oe under the conditions of HAC = 1 Oe and HDC = 70 Oe. This frequency-dependent ME behavior clearly showed two different states on each side of the resonance peak which could open the possibility of developing new applications such as magnetic field-controlled switches.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.55.-w Magnetic instruments and components
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Tunable electric properties of PbZrO3 films related to the coexistence of ferroelectricity and antiferroelectricity at room temperature

Yaoyang Liu, Xiaomei Lu, Yaming Jin, Song Peng, Fengzhen Huang, Yi Kan, Tingting Xu, Kangli Min, and Jinsong Zhu

Appl. Phys. Lett. 100, 212902 (2012); http://dx.doi.org/10.1063/1.4720146 (4 pages) | Cited 3 times

Online Publication Date: 21 May 2012

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Polycrystalline PbZrO3 films with a preferred orientation were fabricated via the metal-organic decomposition method. For heat-treated PbZrO3 films, the P-E hysteresis loops, dielectric spectra, and I-V curves show interesting changes with time, which strongly suggest the coexistence of antiferroelectric and ferroelectric phases at room temperature. Based on the easy transition between these two phases, the electric properties of the films become tunable. A dielectric tunability of about 50.2% below 8.2 V makes it a promising low working-voltage dielectric tunable material, and the significant current change of four orders of magnitude indicates potential application as a voltage-controlled rheostat.
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77.55.fg Pb(Zr,Ti)O3-based films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.40.Gh Other heat and thermomechanical treatments
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Dielectric relaxation and electrical conductivity in ferroelectric ceramic/polymer composites around the glass transition

A. Peláiz-Barranco

Appl. Phys. Lett. 100, 212903 (2012); http://dx.doi.org/10.1063/1.4720159 (3 pages) | Cited 1 time

Online Publication Date: 22 May 2012

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The electrical conductivity behavior of the [(Pb0.88Sm0.08)(Ti0.99Mn0.01)O3]/polyetherketoneketone ceramic/polymer composite is studied in a wide temperature and frequency ranges around the glass transition of the polymer phase (Tg). The universal relaxation law is applied to model the experimental response. The dc conductivity (σdc) and the hopping frequency (ωH) follow an Arrhenius dependence. The activation energy values for σdc are associated to oxygen migration. The contribution of the conductive processes to the dielectric relaxation is analyzed, considering the oxygen vacancies concentration in the ceramic phase. It is also considered the structural change around Tg and its influence on the dielectric relaxation.
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77.80.Jk Relaxor ferroelectrics
64.70.K- Solid-solid transitions
77.22.Gm Dielectric loss and relaxation
61.41.+e Polymers, elastomers, and plastics
61.72.jd Vacancies

Spin-charge-orbital coupling in multiferroic LuFe2O4 thin films

R. C. Rai, A. Delmont, A. Sprow, B. Cai, and M. L. Nakarmi

Appl. Phys. Lett. 100, 212904 (2012); http://dx.doi.org/10.1063/1.4720401 (4 pages) | Cited 1 time

Online Publication Date: 22 May 2012

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We report optical, electronic, and electrical properties of LuFe2O4 thin films deposited on (001) sapphire and (111) YSZ substrates by electron beam deposition. The absorption spectra of LuFe2O4 thin films contain several electronic transitions above its direct energy band gap of ∼2.18 eV at 300 K. The Fe2+ d to d on-site and O 2p to Fe 3d charge-transfer electronic transitions display a ferrimagnetic transition at ∼235 ± 5 K and the charge-ordered transition at ∼350 ± 10 K. Resistivity and the energy band gap also exhibit the two transitions, confirming a strong spin-charge-orbital coupling in the LuFe2O4 thin film.
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75.85.+t Magnetoelectric effects, multiferroics
75.50.Gg Ferrimagnetics
81.15.Dj E-beam and hot filament evaporation deposition
68.55.at Other materials
78.66.Nk Insulators
73.61.Ng Insulators

Mn-doped 0.15BiInO3-0.85PbTiO3 piezoelectric films deposited by pulsed laser deposition

Sun Young Lee, Song Won Ko, Soonil Lee, and Susan Trolier-McKinstry

Appl. Phys. Lett. 100, 212905 (2012); http://dx.doi.org/10.1063/1.4718528 (3 pages)

Online Publication Date: 22 May 2012

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Undoped, 0.5 and 1.0 mol. % Mn-doped 0.15BiInO3-0.85PbTiO3 films were grown on PbTiO3/Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Phase-pure perovskite films were obtained at a substrate temperature of 585 °C irrespective of Mn doping level. The 0.5 mol. % Mn-doped films showed a room temperature permittivity of 480 and a dielectric loss tangent of 0.015 at 100 kHz after 650 °C post-deposition annealing. The coercive field and remanent polarization were 80 kV/cm and 29 µC/cm2, respectively. The ferroelectric transition temperature of the films ranged from 535 to 585 °C. The e31,f piezoelectric coefficient was −7.1 C/m2. X-ray diffraction and phase transition temperature data showed that the Mn atoms substitute on the Ti-site as Mn3+; the resulting films have p-type conduction characteristics.
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77.65.-j Piezoelectricity and electromechanical effects
81.15.Fg Pulsed laser ablation deposition
61.72.up Other materials
77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization

Photoexcitation of gigahertz longitudinal and shear acoustic waves in BiFeO3 multiferroic single crystal

P. Ruello, T. Pezeril, S. Avanesyan, G. Vaudel, V. Gusev, I. C. Infante, and B. Dkhil

Appl. Phys. Lett. 100, 212906 (2012); http://dx.doi.org/10.1063/1.4719069 (3 pages) | Cited 2 times

Online Publication Date: 25 May 2012

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Using femtosecond laser pulses, coherent GHz acoustic phonons are efficiently photogenerated and photodetected in BiFeO3 (BFO) multiferroic single crystal. Due to the crystal lattice symmetry, longitudinal as well as two transverse acoustic modes are generated and detected, and the corresponding sound velocities are determined. This provides the opportunity to experimentally evaluate the elastic coefficients of the multiferroic compound BiFeO3 that have been estimated so far only through ab initio calculations. The knowledge of the elastic properties of BFO is highly desired for BFO integration in nanoelectronic devices. Moreover, our findings highlight also that BFO may be a good candidate for light-controlled coherent acoustic phonons sources.
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62.65.+k Acoustical properties of solids
62.30.+d Mechanical and elastic waves; vibrations
75.85.+t Magnetoelectric effects, multiferroics
78.47.J- Ultrafast spectroscopy (<1 psec)
63.20.-e Phonons in crystal lattices
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
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