APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

21 May 2012

Volume 100, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 213701 (2012); http://dx.doi.org/10.1063/1.3701135 (4 pages)

Wen Lo, Ara Ghazaryan, Chien-Hsin Tso, Po-Sheng Hu, Wei-Liang Chen, Tsung-Rong Kuo, Sung-Jan Lin, Shean-Jen Chen, Chia-Chun Chen, and Chen-Yuan Dong
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Spin-dependent Seebeck effect in non-local spin valve devices

Mikhail Erekhinsky, Fèlix Casanova, Ivan K. Schuller, and Amos Sharoni

Appl. Phys. Lett. 100, 212401 (2012); http://dx.doi.org/10.1063/1.4717752 (4 pages) | Cited 1 time

Online Publication Date: 21 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We performed measurements of Py/Cu and Py/Ag lateral spin valves as a function of injection current direction and magnitude. Above a “critical” current, there is an unexpected dependence of spin injection on current direction. Positive currents show higher polarization of spin injection than negative. This implies that in addition to current-induced spin injection, there is a thermally induced injection from a spin-dependent Seebeck effect. A temperature gradient in the Py electrode, caused by Joule heating, is responsible for injecting excess spins into the non-magnetic channel. This effect has important consequences for understanding high-current spin-based devices, such as spin transfer torque devices.
Show PACS
72.15.Jf Thermoelectric and thermomagnetic effects
75.47.-m Magnetotransport phenomena; materials for magnetotransport
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

B. F. Gao (高波), P. Gehring, M. Burghard, and K. Kern

Appl. Phys. Lett. 100, 212402 (2012); http://dx.doi.org/10.1063/1.4719196 (4 pages) | Cited 5 times

Online Publication Date: 21 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of ∼100% is observed, while the associated B-field dependence changes from quadratic to linear. Concomitantly, the resistance-versus-temperature curves evolve from metallic to semiconductor-like, and increasingly strong weak anti-localization behavior is manifested. Analysis of the magnetoresistance data reveals two contributions, namely from the bulk conduction band and from a state inside the bulk gap. The latter is responsible for the linear magnetoresistance and likely represents the topologically protected surface state.
Show PACS
72.20.My Galvanomagnetic and other magnetotransport effects
73.20.At Surface states, band structure, electron density of states
73.25.+i Surface conductivity and carrier phenomena

Contact resistance as a probe of near-interface ferromagnetism in GaMnAs/Cu bilayers

K. F. Eid, B. Paudel, G. Riley, D. Dahliah, X. Liu, and J. K. Furdyna

Appl. Phys. Lett. 100, 212403 (2012); http://dx.doi.org/10.1063/1.4716471 (4 pages)

Online Publication Date: 21 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We used contact resistance measurements as a sensitive probe of near-surface magnetism in GaMnAs by studying the temperature dependence of the contact resistance at Cu/GaMnAs interfaces. The specific contact resistance (ARC) has a peak that is clearly shifted towards lower temperature than that seen in GaMnAs resistivity. This shift suggests that the magnetization in the GaMnAs film is suppressed near the Cu interface. Furthermore, we show that when a native oxide layer is present between GaMnAs and Cu, the behavior of ARC is dramatically different, due to the thicker tunnel barrier at the interface.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
75.70.Rf Surface magnetism
73.40.Cg Contact resistance, contact potential
73.40.Gk Tunneling
73.40.Ns Metal-nonmetal contacts
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Magnetization switching of an MgO/Co/Pt layer by in-plane current injection

Can Onur Avci, Kevin Garello, Ioan Mihai Miron, Gilles Gaudin, Stéphane Auffret, Olivier Boulle, and Pietro Gambardella

Appl. Phys. Lett. 100, 212404 (2012); http://dx.doi.org/10.1063/1.4719677 (3 pages)

Online Publication Date: 21 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate magnetization switching of a perpendicularly magnetized MgO/Co/Pt trilayer by application of an in-plane current and a constant in-plane magnetic field of small amplitude. Switching occurs due to an effective torque generated by spin-orbit coupling intrinsic to the trilayer structure. We investigate the dependence of the critical switching current on the current pulse width, showing that magnetization reversal in the dc limit is assisted by thermal fluctuations.
Show PACS
75.60.Jk Magnetization reversal mechanisms
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Tj Spin-orbit effects
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Spin-orbit field switching of magnetization in ferromagnetic films with perpendicular anisotropy

D. Wang

Appl. Phys. Lett. 100, 212405 (2012); http://dx.doi.org/10.1063/1.4722929 (4 pages) | Cited 1 time

Online Publication Date: 25 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d exchange interaction, is proposed for the manipulation of magnetization. Magnetization switching in ferromagnetic thin films with perpendicular magnetocrystalline anisotropy can be achieved by current induced spin-orbit field, with small in-plane applied magnetic field. Spin-orbit field induced by current pulses as short as 10 ps can initiate ultrafast magnetization switching effectively, with experimentally achievable current densities. The whole switching process completes in about 100 ps.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.75.-c Magnetic properties of nanostructures
75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
75.30.Et Exchange and superexchange interactions

Magnetic bit stability: Competition between domain-wall and monodomain switching

Silas Hoffman, Yaroslav Tserkovnyak, Pedram Khalili Amiri, and Kang L. Wang

Appl. Phys. Lett. 100, 212406 (2012); http://dx.doi.org/10.1063/1.4716023 (4 pages) | Cited 1 time

Online Publication Date: 25 May 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We numerically study the thermal stability properties of computer memory storage realized by a magnetic ellipse. In the case of practical magnetic random-access memory devices, the bit can form a spin texture during switching events. To study the energy barrier for thermally induced switching, we develop a variational procedure to force the bit to traverse a smooth path through configuration space between the points of stability. We identify textured configurations realizing domain-wall propagation, which may have an energy barrier less than that of the corresponding monodomain model. We contrast the emergence of such micromagnetic effects in thermal versus field-induced switching.
Show PACS
85.75.Bb Magnetic memory using giant magnetoresistance
85.75.Dd Magnetic memory using magnetic tunnel junctions
75.78.Jp Ultrafast magnetization dynamics and switching
75.60.Ch Domain walls and domain structure
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close