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21 May 2012

Volume 100, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 213701 (2012); http://dx.doi.org/10.1063/1.3701135 (4 pages)

Wen Lo, Ara Ghazaryan, Chien-Hsin Tso, Po-Sheng Hu, Wei-Liang Chen, Tsung-Rong Kuo, Sung-Jan Lin, Shean-Jen Chen, Chia-Chun Chen, and Chen-Yuan Dong
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Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers

Hong-Di Xiao, Jian-Qiang Liu, Cai-Na Luan, Zi-Wu Ji, and Ji-Shi Cui

Appl. Phys. Lett. 100, 213101 (2012); http://dx.doi.org/10.1063/1.4717743 (3 pages) | Cited 1 time

Online Publication Date: 21 May 2012

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Quasi-aligned GaN layer-built nanotowers on silicon (111) substrates by employing ultrathin Ni catalyst films have been grown at 800 °C in a metal-organic chemical vapor deposition system. The nanotower size and the degree of alignment were found to be highly sensitive to changes in the Ni catalyst film thickness. The several growth stages of nanotowers were examined by microscopic technique, which indicates the variation in surface morphology from Ni islands to hexagonal prismatic GaN particles, and finally to GaN layer-built nanotowers. For the third stage, the growth may be attributed to an asymmetric and step by step copying process.
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81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
72.20.My Galvanomagnetic and other magnetotransport effects
78.55.Cr III-V semiconductors

Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions

Yanbin An, Hemant Rao, Gijs Bosman, and Ant Ural

Appl. Phys. Lett. 100, 213102 (2012); http://dx.doi.org/10.1063/1.4719094 (4 pages)

Online Publication Date: 21 May 2012

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The electronic noise of single-walled carbon nanotube (CNT) film-Silicon Schottky junctions under forward bias is experimentally characterized. The superposition of a stable 1/f noise and a temporally unstable Lorentzian noise is observed, along with a random telegraph signal (RTS) in the time domain. The data analysis shows that the Lorentzian noise results from the RTS current fluctuations. The data agree well with theoretical descriptions of noise in Schottky junctions due to carrier trapping and detrapping at interface states. Understanding the noise properties of CNT film-Si junctions is important for the integration of CNT film electrodes into silicon-based devices.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.70.+m Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Polarized light microscopy of chemical-vapor-deposition-grown graphene on copper

K. Kertész, A. A. Koós, A. T. Murdock, Z. Vértesy, P. Nemes-Incze, P. J. Szabó, Z. E. Horváth, L. Tapasztó, Chanyong Hwang, N. Grobert, and L. P. Biró

Appl. Phys. Lett. 100, 213103 (2012); http://dx.doi.org/10.1063/1.4719205 (5 pages)

Online Publication Date: 21 May 2012

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Linearly polarized light microscopy (PM) revealed that graphene grown by chemical vapor deposition (CVD) on stepped Cu substrate may appear colored. The coloration is associated with the coupling of the light of 450–600 nm into propagating mode in the graphene layer when the electric vector (math) of polarized light is parallel with the step edges and with the scattering when the math is normal to the step edges. PM is an inexpensive, fast, and contamination free method to efficiently visualize graphene and to map the step structure of Cu substrates used for large area CVD growth of graphene.
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81.05.ue Graphene
78.40.Ri Fullerenes and related materials
61.48.Gh Structure of graphene
78.67.Wj Optical properties of graphene

Nanometer-thin solid-state nanopores by cold ion beam sculpting

Aaron T. Kuan and Jene A. Golovchenko

Appl. Phys. Lett. 100, 213104 (2012); http://dx.doi.org/10.1063/1.4719679 (4 pages)

Online Publication Date: 21 May 2012

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Recent work on protein nanopores indicates that single molecule characterization (including DNA sequencing) is possible when the length of the nanopore constriction is about a nanometer. Solid-state nanopores offer advantages in stability and tunability, but a scalable method for creating nanometer-thin solid-state pores has yet to be demonstrated. Here we demonstrate that solid-state nanopores with nanometer-thin constrictions can be produced by “cold ion beam sculpting,” an original method that is broadly applicable to many materials, is easily scalable, and requires only modest instrumentation.
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81.05.Rm Porous materials; granular materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials

Thin smart multilayer microwave absorber based on hybrid structure of polymer and carbon nanotubes

Y. Danlée, I. Huynen, and C. Bailly

Appl. Phys. Lett. 100, 213105 (2012); http://dx.doi.org/10.1063/1.4717993 (3 pages)

Online Publication Date: 22 May 2012

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We present a thin and flexible multilayer solution for effective absorption of electromagnetic waves from 8 to 40 GHz and probably higher. Submillimetric conductive and dielectric layers based on polymer and carbon nanotubes are successively stacked. A smart gradient-periodic arrangement results in a very high absorption index despite overall millimetric thickness of the system.
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81.90.+c Other topics in materials science (restricted to new topics in section 81)
84.40.-x Radiowave and microwave (including millimeter wave) technology

Silicon nanowire atomic force microscopy probes for high aspect ratio geometries

Brian A. Bryce, B. Robert Ilic, Mark C. Reuter, and Sandip Tiwari

Appl. Phys. Lett. 100, 213106 (2012); http://dx.doi.org/10.1063/1.4720406 (4 pages)

Online Publication Date: 22 May 2012

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Using site controlled growth of single vapor-liquid-solid silicon nanowires high aspect ratio atomic force microscope probes are fabricated on a wafer scale. Nanowire probe aspect ratios as high as 90:1 are demonstrated. Probe performance and limitations are explored by imaging high aspect ratio etched silicon structures using atomic force microscopy. Silicon nanowire probes are an ideal platform for non-destructive topographic imaging of high aspect ratio features.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.07.Gf Nanowires
81.05.Cy Elemental semiconductors
68.37.Ps Atomic force microscopy (AFM)
81.65.Cf Surface cleaning, etching, patterning
81.16.-c Methods of micro- and nanofabrication and processing

Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon

G. Mazzeo, E. Prati, M. Belli, G. Leti, S. Cocco, M. Fanciulli, F. Guagliardo, and G. Ferrari

Appl. Phys. Lett. 100, 213107 (2012); http://dx.doi.org/10.1063/1.4721433 (4 pages) | Cited 2 times

Online Publication Date: 22 May 2012

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We report on the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor extracted from the current through the quantum dot as a probe for the donor ionization state. We employ a silicon n-metal-oxide-semiconductor field-effect transistor (MOSFET) with two side gates at a single metallization level to control both the device conductance and the donor charge. The elastic nature of the process is demonstrated by temperature and magnetic field independent tunneling times. The Fano factor approaches 1/2 revealing that the process is sub-poissonian.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors

High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, and Seiji Samukawa

Appl. Phys. Lett. 100, 213108 (2012); http://dx.doi.org/10.1063/1.4719099 (3 pages)

Online Publication Date: 22 May 2012

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High-quality germanium dioxide (GeO2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO2 thin films (equivalent oxide thickness (EOT) = 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 1011 cm−2 eV−1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.20.At Surface states, band structure, electron density of states
85.30.Tv Field effect devices

Grafting polymer coatings onto the surfaces of carbon nanotube forests and yarns via a photon irradiation process

Fei Deng, N. Rujisamphan, Chang Liu, Yoshinari Maezono, Stephen C. Hawkins, Chi P. Huynh, S. Ismat Shah, and Chaoying Ni

Appl. Phys. Lett. 100, 213109 (2012); http://dx.doi.org/10.1063/1.4720509 (3 pages)

Online Publication Date: 23 May 2012

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Surface activation of carbon nanotubes (CNTs) as forests and yarns, depolytmerization of candidate polymers, and uniform deposition and re-polymerization onto the activated CNTs are simultaneously achieved by exposing CNTs and polymer targets to light with a narrow wavelength distribution from a vacuum ultraviolet lamp. Both polystyrene and poly (methyl methacrylate) are deposited onto the surface of CNTs in the CNT-forest and yarn in a N2 environment for 30 min during which the polymer uniformly coats the carbon nanotubes. X-ray photoelectron spectroscopy data reveal that covalent bonding occurs at the CNT-polymer interface.
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81.65.-b Surface treatments
82.35.-x Polymers: properties; reactions; polymerization
65.40.gp Surface energy
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Plasmon-polaritons on graphene-metal surface and their use in biosensors

Omer Salihoglu, Sinan Balci, and Coskun Kocabas

Appl. Phys. Lett. 100, 213110 (2012); http://dx.doi.org/10.1063/1.4721453 (5 pages) | Cited 11 times

Online Publication Date: 23 May 2012

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We studied excitation of surface plasmon-polaritons on graphene-metal surface. The metal surface is functionalized by transfer printing of graphene grown by chemical vapor deposition on copper foils. Surface plasmon resonance characteristics of monolayer and multilayer graphene on the metal surface are presented. We were able to obtain the dispersion relation of graphene-metal surface which reveals the essential feature of the plasmon-polaritons. As an application, we fabricated a surface plasmon resonance sensor integrated with a microfluidic device to study nonspecific physical interaction between graphene layer and proteins.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Near-field artifacts in tip-enhanced Raman spectroscopy

R. Ramos and M. J. Gordon

Appl. Phys. Lett. 100, 213111 (2012); http://dx.doi.org/10.1063/1.4722805 (4 pages) | Cited 3 times

Online Publication Date: 24 May 2012

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We demonstrate that near-field optical interactions encountered in tip-enhanced Raman spectroscopy (TERS) imaging of a nano-object can result in enhanced light scattering that is not caused by localized plasmonic excitations. The true TERS signal is shown to scale with the tip size; however, other tip-related artifacts can lead to spatial variations in Rayleigh and Raman scattering below the diffraction limit with decay lengths up to 250 nm. Such artifacts have been attributed to multiple scattering events involving the tip shaft; experimental considerations to alleviate these near-field artifacts and anomalous TERS signals are also discussed.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
78.35.+c Brillouin and Rayleigh scattering; other light scattering
07.79.Fc Near-field scanning optical microscopes

Tunable electron and hole doping in FeCl3 intercalated graphene

James Nathaniel and Xiao-Qian Wang

Appl. Phys. Lett. 100, 213112 (2012); http://dx.doi.org/10.1063/1.4722817 (3 pages)

Online Publication Date: 24 May 2012

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We have studied the electronic characteristics of FeCl3 intercalated bilayer graphene under a perpendicularly applied electric bias. Evolution of the electronic structure of FeCl3 intercalated bilayer graphene as a function of the applied electric bias is performed using first-principles density-functional theory including interlayer van der Waals interactions. The calculation results demonstrate that the hole-doped graphene layers associated with the high electronegativity of FeCl3 transform into electron-doped layers tuned by the applied bias. The implications of controllable electronic structure of intercalated graphene for future device applications are discussed.
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71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Anomalous length scaling of carbon nanotube-metal contact resistance: An ab initio study

Yong-Hoon Kim (김용훈) and Hu Sung Kim (김후성)

Appl. Phys. Lett. 100, 213113 (2012); http://dx.doi.org/10.1063/1.4721487 (4 pages)

Online Publication Date: 24 May 2012

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Employing open-ended carbon nanotubes (CNTs) with and without hydrogen termination, we study the length scaling of metal-CNT contact resistance and its correlation with chemical bonding from first principles. Both models similarly show a transition from the fast-growing short-length scaling to the slow-growing long-length scaling. However, while the hydrogenated CNTs have much lower short-length resistances than H-free CNTs, Schottky barrier of the former is almost twice thicker and its eventual long-length-limit resistance becomes significantly higher. This demonstrates the critical role of atomistic details in metal-CNT contacts and localized CNT edge states for the Schottky barrier shape and metal-induced gap states.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
61.46.Fg Nanotubes

Determination of excitonic size with sub-nanometer precision via excitonic Aharonov-Bohm effect in type-II quantum dots

B. Roy, H. Ji, S. Dhomkar, F. J. Cadieu, L. Peng, R. Moug, M. C. Tamargo, and I. L. Kuskovsky

Appl. Phys. Lett. 100, 213114 (2012); http://dx.doi.org/10.1063/1.4721489 (3 pages) | Cited 2 times

Online Publication Date: 24 May 2012

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A spectral analysis of the Aharonov-Bohm (AB) oscillation in magneto-photoluminescence intensity was performed for stacked type-II ZnTe/ZnSe quantum dots (QDs). Very narrow AB oscillations (∼0.3 T) allowed for probing of both the lateral size distribution in the stack ensemble of QDs and the size of type-II excitons as determined by the electronic orbit with sub-nanometer precision. Two sets of stacks with excitonic size of 18.2 and 17.5 nm are determined to be present in the sample.
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71.35.-y Excitons and related phenomena
78.20.Ls Magneto-optical effects
78.55.Et II-VI semiconductors
78.67.Hc Quantum dots

Transmission properties of surface-plasmon-polariton coherence

Takuma Aihara and Mitsuo Fukuda

Appl. Phys. Lett. 100, 213115 (2012); http://dx.doi.org/10.1063/1.4723715 (4 pages)

Online Publication Date: 24 May 2012

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The transmission properties of the coherent optical signal through surface plasmon polaritons (SPPs) were investigated using a delayed self-heterodyne method. The beat spectra between the light beam through SPPs and the reference beam were observed. As the distance propagated as SPPs increases, the full width at half maximum values of the beat spectra was constant, with only decreasing peak values of the beat spectra. The retention of the coherence is also confirmed by analytical calculations based on a Drude model.
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78.66.-w Optical properties of specific thin films
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
79.20.Ds Laser-beam impact phenomena
42.25.Kb Coherence
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps

G. Cohen-Taguri, A. Ruzin, and I. Goldfarb

Appl. Phys. Lett. 100, 213116 (2012); http://dx.doi.org/10.1063/1.4721805 (5 pages)

Online Publication Date: 24 May 2012

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We used in situ scanning tunneling microscopy to monitor in real time the formation of nano-rings at the molecular beam epitaxially grown In/CdZnTe(110) surface, and Auger electron spectroscopy to explore the corresponding compositional changes. In-diffusion of In and segregation of Cd to the surface in course of annealing lead to a formation of elliptically distorted nano-rings, elongated along the fast [math10] diffusion direction. Exacerbated diffusion anisotropy in the liquid state, at temperatures above the melting point of In, further distorts the nano-rings into a camel-hump shape.
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81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.16.Dn Self-assembly
61.72.Cc Kinetics of defect formation and annealing
68.35.Dv Composition, segregation; defects and impurities
79.20.Fv Electron impact: Auger emission

Three-dimensional elemental mapping of hollow Fe2O3@SiO2 mesoporous spheres using scanning confocal electron microscopy

Peng Wang, Ayako Hashimoto, Masaki Takeguchi, Kazutaka Mitsuishi, Masayuki Shimojo, Yufang Zhu, Mitsuhiro Okuda, Angus I. Kirkland, and Peter D. Nellist

Appl. Phys. Lett. 100, 213117 (2012); http://dx.doi.org/10.1063/1.4714889 (4 pages) | Cited 1 time

Online Publication Date: 25 May 2012

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Energy filtered scanning confocal electron microscopy (EFSCEM) in an aberration-corrected transmission electron microscope offers an approach for three-dimensional imaging and chemical analysis of nanoscale materials related to the well-established technique of confocal scanning optical microscopy. Here, we apply EFSCEM to the compositional analysis of the core structure in candidate structures for targeted drug delivery. Element-specific optical sectioning along the specimen depth direction demonstrates the presence of additional Si in a nominal Fe2O3 core. The presence of Si in the core is consistent with a specific formation mechanism for the hollow structure of the core.
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81.16.-c Methods of micro- and nanofabrication and processing
82.80.Fk Electrochemical methods
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials
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