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21 May 2012

Volume 100, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 213701 (2012); http://dx.doi.org/10.1063/1.3701135 (4 pages)

Wen Lo, Ara Ghazaryan, Chien-Hsin Tso, Po-Sheng Hu, Wei-Liang Chen, Tsung-Rong Kuo, Sung-Jan Lin, Shean-Jen Chen, Chia-Chun Chen, and Chen-Yuan Dong
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Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

A. M. Hoang, G. Chen, A. Haddadi, S. Abdollahi Pour, and M. Razeghi

Appl. Phys. Lett. 100, 211101 (2012); http://dx.doi.org/10.1063/1.4720094 (4 pages) | Cited 6 times

Online Publication Date: 22 May 2012

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We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10−8 A/cm2 and a front-side-illuminated quantum efficiency of 40.3%, providing an associated shot noise detectivity of 1.0 × 1013 Jones. The uncooled photodiode showed a dark current density of 2.2 × 10−3 A/cm2 and a quantum efficiency of 41.5%, resulting in a detectivity of 1.7 × 1010 Jones.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
72.70.+m Noise processes and phenomena
73.21.Cd Superlattices

Terahertz time-domain spectroscopy of anisotropic complex conductivity tensors in silicon nanowire films

Meehyun Lim, Sung-Jin Choi, Gyu-Seok Lee, Myeong-Lok Seol, Youngwoong Do, Yang-Kyu Choi, and Haewook Han

Appl. Phys. Lett. 100, 211102 (2012); http://dx.doi.org/10.1063/1.4721490 (4 pages)

Online Publication Date: 22 May 2012

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The effective complex conductivity tensor of a highly anisotropic, vertically aligned silicon nanowire film was measured by terahertz time-domain spectroscopy. The silicon nanowires were fabricated on a p-type silicon substrate by metal-assisted chemical etching, which resulted in a film with uniaxially anisotropic optical properties. The measured terahertz transverse and longitudinal conductivity values were in excellent agreement with the results of calculations based on the Drude-Smith and Lorentz models, respectively.
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78.47.J- Ultrafast spectroscopy (<1 psec)
78.67.Uh Nanowires
81.07.Gf Nanowires
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Db Elemental semiconductors and insulators
81.65.Cf Surface cleaning, etching, patterning

Controlled-NOT gate operating with single photons

M. A. Pooley, D. J. P. Ellis, R. B. Patel, A. J. Bennett, K. H. A. Chan, I. Farrer, D. A. Ritchie, and A. J. Shields

Appl. Phys. Lett. 100, 211103 (2012); http://dx.doi.org/10.1063/1.4719077 (4 pages) | Cited 4 times

Online Publication Date: 22 May 2012

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The initial proposal for scalable optical quantum computing required single photon sources, linear optical elements such as beamsplitters and phaseshifters, and photon detection. Here, we demonstrate a two qubit gate using indistinguishable photons from a quantum dot in a pillar microcavity. As the emitter, the optical circuitry, and the detectors are all semiconductor, this is a promising approach towards creating a fully integrated device for scalable quantum computing.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.50.-p Quantum optics
42.82.-m Integrated optics

Screen printed ZnO ultraviolet photoconductive sensor on pencil drawn circuitry over paper

Kamran ul Hasan, Omer Nur, and Magnus Willander

Appl. Phys. Lett. 100, 211104 (2012); http://dx.doi.org/10.1063/1.4720179 (3 pages) | Cited 2 times

Online Publication Date: 23 May 2012

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Many applications require a low-cost and large-scale mode of flexible electronics with reasonably high photoresponse that can be detected without high precision measurement systems. We demonstrate a very easy to fabricate ZnO UV sensor, made on common pencil drawn circuit over a paper. ZnO nanocrystals were extracted in a high throughput via a simple and green route. This sensor is well capable of detecting UV light and demonstrates features comparable to those of made with complex and expensive techniques.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.-q Optoelectronic devices
81.07.Bc Nanocrystalline materials

Partial rectification of the plasmon-induced electrical tunnel current in discontinuous thin gold film at optical frequency

M. M. A. Yajadda, K.-H. Müller, D. I. Farrant, and K. Ostrikov

Appl. Phys. Lett. 100, 211105 (2012); http://dx.doi.org/10.1063/1.4720513 (4 pages) | Cited 2 times

Online Publication Date: 23 May 2012

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The effect of plasmon oscillations, induced by pulsed laser irradiation, on the DC tunnel current between islands in a discontinuous thin gold film is studied. The tunnel current is found to be strongly enhanced by partial rectification of the plasmon-induced AC tunnel currents flowing between adjacent gold islands. The DC tunnel current enhancement is found to increase approximately linearly with the laser intensity and the applied DC bias voltage. The experimental data can be well described by an electron tunnelling model which takes the plasmon-induced AC voltage into account. Thermal heating seems not to contribute to the tunnel current enhancement.
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78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.40.Gk Tunneling

Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon

Jianfei Wang, Timothy Zens, Juejun Hu, Piotr Becla, Lionel C. Kimerling, and Anuradha M. Agarwal

Appl. Phys. Lett. 100, 211106 (2012); http://dx.doi.org/10.1063/1.4722917 (3 pages) | Cited 1 time

Online Publication Date: 24 May 2012

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In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated nanocrystalline PbTe as the photoconductive absorbers. Excellent agreement between theory and experiment is confirmed. The pixel design can potentially be further extended to realizing multispectral detection.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
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