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21 May 2012

Volume 100, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 100, 213701 (2012); http://dx.doi.org/10.1063/1.3701135 (4 pages)

Wen Lo, Ara Ghazaryan, Chien-Hsin Tso, Po-Sheng Hu, Wei-Liang Chen, Tsung-Rong Kuo, Sung-Jan Lin, Shean-Jen Chen, Chia-Chun Chen, and Chen-Yuan Dong
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Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

M. F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, and R. Goldhahn

Appl. Phys. Lett. 100, 212101 (2012); http://dx.doi.org/10.1063/1.4720087 (4 pages)

Online Publication Date: 21 May 2012

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The luminescence properties of InxAl1−xN/GaN heterostructures are investigated systematically as a function of the In content (x = 0.067 − 0.208). The recombination between electrons confined in the two-dimensional electron gas and free holes in the GaN template is identified and analyzed. We find a systematic shift of the recombination with increasing In content from about 80 meV to only few meV below the GaN exciton emission. These results are compared with model calculations and can be attributed to the changing band profile and originating from the polarization gradient between InAlN and GaN.
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78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Zhiyuan Zheng, Zimin Chen, Yingda Chen, Shanjin Huang, Bingfeng Fan, Yulun Xian, Weiqing Jia, Zhisheng Wu, Gang Wang, and Hao Jiang

Appl. Phys. Lett. 100, 212102 (2012); http://dx.doi.org/10.1063/1.4720395 (4 pages)

Online Publication Date: 21 May 2012

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We report the anomalous mobility properties of Si-delta-doped GaN with periodically doping profile. Samples with different delta-doping periods or with varied Si source flow were investigated. It is found that for the short delta-doping-period (<26.5 nm) samples, the Hall mobility increases with decreasing electron concentration; while for the longer-doping-period samples, the situation is just the opposite. To interpret this observation, a two-layer model has been built up for long-period samples based on secondary ion mass spectroscopy measurements. The fitting results using this model are well consistent with the experimental data.
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72.20.My Galvanomagnetic and other magnetotransport effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
72.80.Ey III-V and II-VI semiconductors
72.80.Cw Elemental semiconductors
61.72.uj III-V and II-VI semiconductors

Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN

Keun-Man Song, Jong-Min Kim, Bong-Kyun Kang, Dae-Ho Yoon, S. Kang, Sang-Won Lee, and Sung-Nam Lee

Appl. Phys. Lett. 100, 212103 (2012); http://dx.doi.org/10.1063/1.4720507 (4 pages) | Cited 1 time

Online Publication Date: 21 May 2012

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We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs.
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61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.67.De Quantum wells
81.05.Ea III-V semiconductors
82.33.Ya Chemistry of MOCVD and other vapor deposition methods

High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers

N. Bandyopadhyay, S. Slivken, Y. Bai, and M. Razeghi

Appl. Phys. Lett. 100, 212104 (2012); http://dx.doi.org/10.1063/1.4719110 (4 pages) | Cited 9 times

Online Publication Date: 21 May 2012

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We report two highly strain-balanced InP-based AlInAs/GaInAs quantum cascade lasers emitting near 3.39 and 3.56 μm. A pulsed threshold current density of only 1.1 kA/cm2 has been achieved at room temperature for both lasers with characteristic temperatures (T0) of 166 K and 152 K, respectively. The slope efficiency is also relatively temperature insensitive with characteristic temperatures (T1) of 116 K and 191 K, respectively. Continuous wave powers of 504 mW and 576 mW are obtained at room temperature, respectively. This was accomplished without buried ridge processing.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Parity oscillations of Kondo temperature in a single molecule break junction

B. M. F. de Resende and E. Vernek

Appl. Phys. Lett. 100, 212105 (2012); http://dx.doi.org/10.1063/1.4720506 (4 pages)

Online Publication Date: 22 May 2012

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We study the Kondo temperature (TK) of a single molecule break junction. By employing a numerical renormalization group calculations we have found that TK depends dramatically upon the position of the molecule in the wire formed between the contacts. We show that TK exhibits strong oscillations when the parity of the left and/or right number of atomic sites (NL,NR) is changed. For a given set of parameters, the maximum value of TK occurs for (odd, odd) combination, while its minimum value is observed for (even, even). These oscillations are fully understood in terms of the effective hybridization function.
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85.65.+h Molecular electronic devices

Acceptor-like deep level defects in ion-implanted ZnO

L. Vines, J. Wong-Leung, C. Jagadish, V. Quemener, E. V. Monakhov, and B. G. Svensson

Appl. Phys. Lett. 100, 212106 (2012); http://dx.doi.org/10.1063/1.4720514 (4 pages) | Cited 1 time

Online Publication Date: 22 May 2012

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N-type ZnO samples have been implanted with MeV Zn+ ions at room temperature to doses between 1×108 and 2×1010cm-2, and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.
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71.55.Gs II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
79.10.Ca Deep-level photothermal spectroscopy
71.20.Nr Semiconductor compounds

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

K. Hestroffer, C. Leclere, V. Cantelli, C. Bougerol, H. Renevier, and B. Daudin

Appl. Phys. Lett. 100, 212107 (2012); http://dx.doi.org/10.1063/1.4721521 (5 pages) | Cited 3 times

Online Publication Date: 22 May 2012

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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy is studied through a combination of two in situ tools: grazing incidence x-ray diffraction and reflection high energy electron diffraction. Growth on bare Si(111) and on AlN/Si(111) is compared. A significantly larger delay at nucleation is observed for nanowires grown on bare Si(111). The difference in the nucleation delay is correlated to a dissimilarity of chemical reactivity between Al and Ga with nitrided Si(111).
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81.16.Dn Self-assembly
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
68.55.ag Semiconductors
52.77.Dq Plasma-based ion implantation and deposition
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals

V. Scherer, C. Janowitz, A. Krapf, H. Dwelk, D. Braun, and R. Manzke

Appl. Phys. Lett. 100, 212108 (2012); http://dx.doi.org/10.1063/1.4719665 (5 pages) | Cited 3 times

Online Publication Date: 22 May 2012

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High quality In2O3 single crystals of bcc structure were grown by chemical vapour transport. The temperature dependence of resistivity, Hall constant, and mobility yielded an electron density of n = 1.3 × 1019 cm−3. The transport properties showed characteristics best describable by the degenerate semiconductor model. The crystals were additionally investigated by high resolution angular resolved photoelectron spectroscopy (ARPES). Emission from the valence band and the partially filled conduction band at the Γ point yielded a direct bandgap of (2.7 ± 0.1)eV. The partially filled conduction band furthermore enabled the determination of its three dimensional Fermi surface and the effective masses m* by ARPES.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.20.Nr Semiconductor compounds
72.20.My Galvanomagnetic and other magnetotransport effects
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) p-channel metal-oxide-semiconductor field-effect transistor

K. Ota, M. Saitoh, Y. Nakabayashi, T. Ishihara, K. Uchida, and T. Numata

Appl. Phys. Lett. 100, 212109 (2012); http://dx.doi.org/10.1063/1.4722796 (3 pages)

Online Publication Date: 23 May 2012

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Negative bias temperature instability in Si (100) and (110) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) is systematically studied. Threshold voltage shift in (110) pMOSFETs is found to be larger than that in (100) pMOSFETs because of larger amount of the generated interface traps. On the other hand, mechanisms behind the generation of the interface traps are independent of the surface orientations. We newly found that drain current degradation in (110) pMOSFETs is severer than that in (100) pMOSFETs even when the same amount of charges is generated at the interface. This can be explained by larger mobility degradation in (110) pMOSFETs.
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85.30.Tv Field effect devices

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, and Kenji Shiraishi

Appl. Phys. Lett. 100, 212110 (2012); http://dx.doi.org/10.1063/1.4722782 (3 pages) | Cited 1 time

Online Publication Date: 24 May 2012

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We demonstrate on the basis of first-principles calculations that the formation of carbonate-like moiety in SiO2 could be the intrinsic origin of negative fixed charge in SiC thermal oxidation. We find that two possible origins for the negative fixed charges are O-lone-pair state and a negatively charged CO3 ion in SiO2. Such CO3 ion is able to be formed as a result of the existence of residual C atoms in SiO2, which are expected to be emitted from the interface between SiC and SiO2, and the incorporation of H atoms during wet oxidation.
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81.65.Mq Oxidation

Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method

Tae-Geun Seong, Kyu Bum Choi, In-Tae Seo, Joon-Ho Oh, Ji Won Moon, Kwon Hong, and Sahn Nahm

Appl. Phys. Lett. 100, 212111 (2012); http://dx.doi.org/10.1063/1.4722797 (4 pages) | Cited 1 time

Online Publication Date: 24 May 2012

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Amorphous Pr0.7Ca0.3MnO3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 105 s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism.
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73.61.Jc Amorphous semiconductors; glasses
78.66.Jg Amorphous semiconductors; glasses
81.15.Fg Pulsed laser ablation deposition
84.30.Sk Pulse and digital circuits
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects

The recovery mechanism of the light-induced instability of the amorphous InGaZnO thin film transistors

Chao-Lung Wang, Huang-Chung Cheng, Chun-Yu Wu, I-Che Lee, Yu-Ting Cheng, Po-Yu Yang, Chih-Hung Tsai, Chun-Hsiang Fang, and Chung-Chun Lee

Appl. Phys. Lett. 100, 212112 (2012); http://dx.doi.org/10.1063/1.4721517 (4 pages)

Online Publication Date: 24 May 2012

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The recovery mechanism of the light-induced instability of amorphous InGaZnO thin-film transistors was examined. Following light illumination, the bare devices displayed more dark recovery of the threshold voltage (Vth) shifts than the ones encapsulated in nitrogen ambient. This was attributed to the adsorption of more oxygen (O2) in the back channel of the bare devices. Further, much more recovery was also observed for the bare devices than the nitrogen-encapsulated ones under positive gate bias. This implied the recovery effect under gate bias could be further enhanced because the induced electrons could greatly increase the adsorption of more O2 for the bare devices.
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85.30.Tv Field effect devices

Extremely high-density GaAs quantum dots grown by droplet epitaxy

M. Jo, T. Mano, Y. Sakuma, and K. Sakoda

Appl. Phys. Lett. 100, 212113 (2012); http://dx.doi.org/10.1063/1.4721663 (3 pages) | Cited 4 times

Online Publication Date: 24 May 2012

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We report the fabrication of extremely high-density GaAs quantum dots (QDs) by droplet epitaxy. We investigated the dependence of temperature and coverage on the dot density. As a result, an areal density of 7.3 × 1011  cm−2 was achieved at a growth temperature of 30 °C by controlling the amount of Ga. The QDs showed clear luminescence even when grown at a low temperature of 30 °C.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
81.05.Ea III-V semiconductors

Controlling photo-induced spectral changes in CdSe/ZnS quantum dots by tuning inter-dot energy transfer

G. V. Shcherbatyuk, P. Talbot, and S. Ghosh

Appl. Phys. Lett. 100, 212114 (2012); http://dx.doi.org/10.1063/1.4721808 (4 pages) | Cited 1 time

Online Publication Date: 24 May 2012

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We study photo-induced spectral changes in films containing two sizes of chemically synthesized CdSe/ZnS quantum dots (QDs) using static and time-resolved spectroscopies. As the concentration of the smaller (donor) QDs is varied over two orders of magnitude relative to the larger (acceptor) dots, we find that with decreasing proportion of donors, the photo-oxidation rate increases in acceptors but slows down in donors. We conclude that these differences originate from the variations in the amount of inter-dot energy transfer from donors to acceptors, and this tunability can be used to enhance the shelf-life of QD based opto-electronic and photovoltaic devices.
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78.67.Hc Quantum dots
78.47.jd Time resolved luminescence
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors
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