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28 May 2012

Volume 100, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 100, 222402 (2012); http://dx.doi.org/10.1063/1.3700809 (4 pages)

Felix Balhorn, Simon Jeni, Wolfgang Hansen, Detlef Heitmann, and Stefan Mendach
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The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors

Sheng-Yao Huang, Ting-Chang Chang, Li-Wei Lin, Man-Chun Yang, Min-Chen Chen, Jhe-Ciou Jhu, and Fu-Yen Jian

Appl. Phys. Lett. 100, 222901 (2012); http://dx.doi.org/10.1063/1.4722787 (4 pages) | Cited 2 times

Online Publication Date: 29 May 2012

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This paper investigates behavior of drain bias stress and gate-drain bias stress under illumination for InGaZnO thin film transistors as the current-driver operated. Properties exhibit two-stage degradation behavior during drain bias stress. The photo-excited hole non-uniform trapping from illumination induces drain side barrier lowering and causes an apparent hump phenomenon of the subthreshold swing. However, the positive threshold voltage shift without a hump phenomenon after gate-drain bias stress is different degradation behaviors. It is reliant on whether or not an inversion layer exists in the channel. This work also employs capacitance-voltage measurement to further clarify the mechanism of degradation behaviors.
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85.30.Tv Field effect devices

Enhanced electrocaloric effect in poly(vinylidene fluoride-trifluoroethylene)-based terpolymer/copolymer blends

Xiang-zhong Chen, Xiao-shi Qian, Xinyu Li, S. G. Lu, Hai-ming Gu, Minren Lin, Qun-dong Shen, and Q. M. Zhang

Appl. Phys. Lett. 100, 222902 (2012); http://dx.doi.org/10.1063/1.4722932 (4 pages) | Cited 8 times

Online Publication Date: 29 May 2012

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The electrocaloric effect in the blends of poly(vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) (P(VDF-TrFE-CFE)) with small amount of poly(vinylidene fluoride–trifluoroethylene) (P(VDF-TrFE)) is investigated. It was found that small amount of P(VDF-TrFE) (∼10 wt. %) can cause a more than 10% increase in the crystallinity in the blends. Although the two polymers form separate crystalline phases, the interfacial couplings to the random defects in the terpolymer convert the normal ferroelectric P(VDF-TrFE) into a relaxor ferroelectric. As a result, the blends with 10 wt. % of P(VDF-TrFE) exhibit a 30% increase in the adiabatic temperature change over the entire experimental temperature range (20 °C–60 °C).
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77.70.+a Pyroelectric and electrocaloric effects
77.80.Jk Relaxor ferroelectrics
77.84.Jd Polymers; organic compounds

A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumulation

B. Yao, Z. B. Fang, Y. Y. Zhu, T. Ji, and G. He

Appl. Phys. Lett. 100, 222903 (2012); http://dx.doi.org/10.1063/1.4722934 (4 pages)

Online Publication Date: 30 May 2012

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High-frequency capacitance-voltage measurements have been made on metal-oxide-semiconductor capacitors by using single crystalline Er2O3 high-k gate dielectrics. Based on our analysis, it has been found that frequency dispersion of Er2O3 capacitance in accumulation decreases consistently with the increase of the frequency. A correction model is proposed to explain these frequency dispersion phenomena and the capacitance-frequency equations are obtained from the impedance expression of the equivalent circuit. Based on the simulated capacitance-frequency, it can be concluded that frequency dispersion of Er2O3 capacitance in accumulation originates from the existence of the parasitic resistances, the series resistances, and the formed SiOx interfacial layer.
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84.32.Tt Capacitors

Origin of thickness dependent dc electrical breakdown in dielectrics

George Chen, Junwei Zhao, Shengtao Li, and Lisheng Zhong

Appl. Phys. Lett. 100, 222904 (2012); http://dx.doi.org/10.1063/1.4721809 (4 pages) | Cited 4 times

Online Publication Date: 31 May 2012

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A model based on space charge dynamics under high dc electric field has been proposed to explain commonly observed thickness dependent breakdown of polymeric material. The formation and dynamics of space charge will result in local electric field enhancement that has a direct impact on dielectric breakdown. The simulation results show that the breakdown depends on the sample thickness with a power index of 0.143, indicating the space charge and its dynamics are responsible for thickness dependent breakdown. The model also predicts the effect of voltage ramping rate on the electrical breakdown strength.
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77.22.Jp Dielectric breakdown and space-charge effects

How to generate high twin densities in nano-ferroics: Thermal quench and low temperature shear

E. K. H. Salje, X. Ding, Z. Zhao, and T. Lookman

Appl. Phys. Lett. 100, 222905 (2012); http://dx.doi.org/10.1063/1.4724192 (3 pages) | Cited 4 times

Online Publication Date: 31 May 2012

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High domain boundary densities in ferroic nano materials are generated in computer simulation studies by (1) fast quench from a para-elastic into a ferroelastic phase and (2) by shear of small samples at low temperatures inside the stability field of the ferroelastic phase. Quenched samples evolve from tweed to junctions to stripe pattern. In driven systems, no tweed exists and the mesoscopic structure ‘nucleates’ rapidly when a yield stress is surpassed. The nucleated domain patterns are long-lived and change towards the single domain state only when the external strain is further increased.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.40.Gh Other heat and thermomechanical treatments
75.85.+t Magnetoelectric effects, multiferroics

Nano-domain engineering in ultrashort-period ferroelectric superlattices

Taekjib Choi, Bae Ho Park, Hyunjung Shin, and Jaichan Lee

Appl. Phys. Lett. 100, 222906 (2012); http://dx.doi.org/10.1063/1.4722791 (4 pages)

Online Publication Date: 1 June 2012

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Ultrashort-period PbZrO3/PbTiO3 (PTO/PZO) ferroelectric/antiferroelectric superlattices are proposed for nano-domain engineering. They behaved like single ferroelectric metamaterials with monodomain excluding a 90° domain boundary, irrespective of their total thicknesses. Further, nanosized 180° domains, as small as ∼12 nm, were achieved by applying a short pulse voltage. Such domain structures of superlattices result from the lowering of the symmetry of supercell by specific atomic stacking in superlattices, contrary to the domain structures of ferroelectric thin films developed by the strain-induced ferroelectric instability. We suggest that ferroelectric superlattices with an ultrashort-period have a clear advantage for nano-domain engineering with greatly enhanced long term stability of the domains.
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77.80.Dj Domain structure; hysteresis
61.46.-w Structure of nanoscale materials

B-site ordering induced suppression of magnetic cluster glass and dielectric anomaly in La2−xBixCoMnO6

Yijia Bai, Xiaojuan Liu, Yanjie Xia, Hongping Li, Xiaolong Deng, Lin Han, Qingshuang Liang, Xiaojie Wu, Zhongchang Wang, and Jian Meng

Appl. Phys. Lett. 100, 222907 (2012); http://dx.doi.org/10.1063/1.4722936 (4 pages)

Online Publication Date: 1 June 2012

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We report the heat, magnetic, and dielectric properties of La2−xBixCoMnO6 with a series of Bi doping concentrations, focusing especially on the impact of A-site doping on B-site ordering. We demonstrate that the B-site ordering is enhanced via the Bi doping, resulting in a suppressed cluster-glass behavior, larger dielectric constant, and smaller tangent loss. Surprisingly, a pronounced step-like dielectric anomaly turns up near the spin-freezing temperature in the Bi-free oxide, which is suppressed significantly after Bi doping. We attribute the suppression of anomaly to the lessened amount of antisite defects at the B sites and the associated strengthened electronic localization.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
61.72.J- Point defects and defect clusters
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
65.40.Ba Heat capacity

Third-order electric-field-induced dipolar resonances from patterned barium-strontium-titanate thin-films

Ryan C. Toonen and M. W. Cole

Appl. Phys. Lett. 100, 222908 (2012); http://dx.doi.org/10.1063/1.4723692 (5 pages) | Cited 1 time

Online Publication Date: 1 June 2012

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Using microwave reflection spectroscopy, the complex permittivities of etch defined, 240 nm thick, (Ba0.6Sr0.4)TiO3, thin films have been measured over the frequency range of (1 to 4) GHz. Anomalous electric-field-induced electro-acoustic resonances were observed and characterized as a function of extrinsic electric field magnitude, ambient temperature, and sample diameter. The real and imaginary parts of the measured permittivities were fit to frequency-dependent functions derived from the Lorentz oscillator model. From these functions, extracted static dielectric constants were found to display excellent agreement with a closed-form expression derived by calculating third-order nonlinear susceptibility from the Landau-Devonshire-Ginzberg model.
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77.84.Cg PZT ceramics and other titanates
78.70.Gq Microwave and radio-frequency interactions
77.22.Ch Permittivity (dielectric function)
73.50.Rb Acoustoelectric and magnetoacoustic effects

Electrocaloric properties of epitaxial strontium titanate films

J. Zhang, I. B. Misirlioglu, S. P. Alpay, and G. A. Rossetti, Jr.

Appl. Phys. Lett. 100, 222909 (2012); http://dx.doi.org/10.1063/1.4721668 (4 pages) | Cited 1 time

Online Publication Date: 1 June 2012

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The electrocaloric (EC) response of strontium titanate thin films is computed as a function of misfit strain, temperature, electric field strength, and electrode configuration using a nonlinear thermodynamic theory. For films in a capacitor configuration on compressive substrates, the transition between paraelectric and strain-induced ferroelectric tetragonal phases produces a large adiabatic temperature change, ΔT = 5 K, at room temperature for electric field changes ΔE = 1200 kV/cm. For films on tensile substrates, the transition between the paraelectric and strain-induced ferroelectric orthorhombic phases can also be accessed using inter-digitated electrodes (IDEs). The maximum EC response occurs for IDEs with a [110] orientation.
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77.70.+a Pyroelectric and electrocaloric effects
77.80.-e Ferroelectricity and antiferroelectricity
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
77.55.Kt Pyroelectric films
77.55.Px Epitaxial and superlattice films
68.55.-a Thin film structure and morphology

Triple-point-type morphotropic phase boundary based large piezoelectric Pb-free material—Ba(Ti0.8Hf0.2)O3-(Ba0.7Ca0.3)TiO3

Chao Zhou, Wenfeng Liu, Dezhen Xue, Xiaobing Ren, Huixin Bao, Jinghui Gao, and Lixue Zhang

Appl. Phys. Lett. 100, 222910 (2012); http://dx.doi.org/10.1063/1.4724216 (5 pages) | Cited 3 times

Online Publication Date: 1 June 2012

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We report a large piezoelectric Pb-free system—Ba(Ti0.8Hf0.2)O3-(Ba0.7Ca0.3)TiO3, designed upon a triple-point morphotropic phase boundary (TMPB) idea. The system shows anomalies of both ac (dielectric and piezoelectric) and dc (P-E hysteresis) properties around TMPB, especially the d33 achieving ∼550 pC/N at room temperature. Moreover, the detected non-zero thermal hysteresis around triple point shows a first order transition nature and non-isotropic polarization state, as well as verified by our theoretical Landau-type deduction, thus being considered as an important factor to influence the piezoelectricity along TMPB. Our work may stimulate the study on triple-point-related critical phenomena in other ferroic systems.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
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