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28 May 2012

Volume 100, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 100, 222402 (2012); http://dx.doi.org/10.1063/1.3700809 (4 pages)

Felix Balhorn, Simon Jeni, Wolfgang Hansen, Detlef Heitmann, and Stefan Mendach
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Transparent SiO2-Ag core-satellite nanoparticle assembled layer for plasmonic-based chemical sensors

Tsung-Han Chen, Ren-Der Jean, Kuo-Chuang Chiu, Chun-Hua Chen, and Dean-Mo Liu

Appl. Phys. Lett. 100, 223101 (2012); http://dx.doi.org/10.1063/1.4722583 (4 pages)

Online Publication Date: 29 May 2012

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We discovered a promising sensing capability of SiO2@Ag core-satellite nanoparticles with respect to organic melamine when they were consolidated into a solid-type thin-film entity. A series of theoretical models were proposed which provided calculation outcomes superior to those of existing models for the localized surface plasmon resonance spectra of the solid-state assemblies. We envisioned not only that such a SiO2@Ag film is a potential candidate for a transparent solid-state optical nanosensor for the detection of organic molecules but also that the resulting plasmonic resonance model facilitates a better understanding of such a solid-state nanosensor used for a number of sensory applications.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Bz Metals and metallic alloys

Intrinsic characteristics of transmission line of graphenes at microwave frequencies

Hee-Jo Lee, Eunho Kim, Jong-Gwan Yook, and Jongwan Jung

Appl. Phys. Lett. 100, 223102 (2012); http://dx.doi.org/10.1063/1.4722585 (3 pages) | Cited 1 time

Online Publication Date: 29 May 2012

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In this paper, we have quantitatively evaluated the effective surface conductivity of chemical vapor deposition-grown graphene through a full-wave electromagnetic method and also investigated the intrinsic characteristics of the transmission line (TL) of the graphene at frequency ranging from 0.5 to 40 GHz. According to the simulated data based on the measured S-parameters, the effective conductivity of single- and multi-layer graphene (MLG) was about 4.3 × 106 S/m and 1.2 × 106 S/m, respectively. Furthermore, we confirm that multi-layer graphene is more suitable for use in transmission lines compared to single-layer graphene in the observed frequency region.
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73.25.+i Surface conductivity and carrier phenomena
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures

Jinkyoung Yoo, Bonghwan Chon, Wei Tang, Taiha Joo, Le Si Dang, and Gyu-Chul Yi

Appl. Phys. Lett. 100, 223103 (2012); http://dx.doi.org/10.1063/1.4721519 (4 pages)

Online Publication Date: 29 May 2012

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The effect of exciton transport on luminescence efficiency was investigated by time-resolved photoluminescence and spatially resolved cathodoluminescence spectroscopy. The internal quantum efficiency of ZnO nanowire (NW) increased from 45% to 56% due to formation of a MgZnO/ZnO coaxial NW heterostructure. MgZnO shell layer formation induced a decrease in the exciton diffusion length and diffusion coefficient from 150 to 120 nm and 9.8 to 6.4 cm2/s, respectively. The change in exciton transport characteristics indicated that exciton transport, in addition to the surface passivation effect, was an important factor determining the luminescence efficiency in the coaxial NW heterostructure.
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71.35.-y Excitons and related phenomena
78.55.Et II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.05.Dz II-VI semiconductors
81.65.Rv Passivation
78.47.jd Time resolved luminescence

High potential sensitivity in heterodyne amplitude-modulation Kelvin probe force microscopy

Yasuhiro Sugawara, Lili Kou, Zongmin Ma, Takeshi Kamijo, Yoshitaka Naitoh, and Yan Jun Li

Appl. Phys. Lett. 100, 223104 (2012); http://dx.doi.org/10.1063/1.4723697 (4 pages) | Cited 1 time

Online Publication Date: 29 May 2012

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A surface potential measurement method using amplitude-modulation and heterodyne techniques is proposed. The effect of the stray capacitance between a cantilever and a sample in Kelvin probe force microscopy and the electrostatic force spectroscopy measurements are almost completely removed, because the distance (z) dependence of the modulated electrostatic force increases from 1/z to1/z2. This method improves the sensitivity of short range forces and reduces the surface potential measurement crosstalk that is induced by topographic feedback. This method has the advantage of high potential sensitivity due to the high cantilever Q value under vacuum. Quantitative surface potential measurements are demonstrated.
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07.79.Lh Atomic force microscopes

Programmable synthesis of shape-, structure-, and composition-modulated one-dimensional heterostructures by galvanic displacement reaction

Hyunsung Jung, Hoyoung Suh, Carlos M. Hangarter, Jae Hong Lim, Young-In Lee, Yong-Ho Choa, Kimin Hong, and Nosang V. Myung

Appl. Phys. Lett. 100, 223105 (2012); http://dx.doi.org/10.1063/1.4722919 (4 pages) | Cited 2 times

Online Publication Date: 30 May 2012

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One-dimensional heterostructures consisting of periodically modulated bismuth telluride tube/wire were synthesized by galvanic displacement reaction of Co/Ni multi-segmented sacrificial nanowires. Utilizing the difference in redox potential and corrosion behavior of Co and Ni, segments, dimension, composition, and structure of the individual segments were also precisely engineered. The programmable ability to synthesize heterostructures with simultaneously modulation of various dimensions in ambient conditions may lead to an effective route to synthesize high performance nanodevices including nanoelectronics, optoelectronics, sensors, and thermoelectrics.
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81.07.Bc Nanocrystalline materials
73.40.Ns Metal-nonmetal contacts

Probing buried layers by photoelectron spectromicroscopy with hard x-ray excitation

C. Wiemann, M. Patt, S. Cramm, M. Escher, M. Merkel, A. Gloskovskii, S. Thiess, W. Drube, and C. M. Schneider

Appl. Phys. Lett. 100, 223106 (2012); http://dx.doi.org/10.1063/1.4722940 (3 pages) | Cited 1 time

Online Publication Date: 30 May 2012

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We report about a proof-of-principle experiment which explores the perspectives of performing hard x-ray photoemission spectromicroscopy with high lateral resolution. Our results obtained with an energy-filtered photoemission microscope at the PETRA III storage ring facility using hard x-ray excitation up to 6.5 keV photon energy demonstrate that it is possible to obtain selected-area x-ray photoemission spectra from regions less than 500 nm in diameter.
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79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Atomistic simulations of heat transport in real-scale silicon nanowire devices

Ivan Duchemin and Davide Donadio

Appl. Phys. Lett. 100, 223107 (2012); http://dx.doi.org/10.1063/1.4723632 (4 pages) | Cited 1 time

Online Publication Date: 30 May 2012

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Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in devices differs significantly from that of suspended extended nanowires, due to phonon scattering at the contact interfaces. We show that thermal conductance and the phonon transport regime can be tuned from ballistic to diffusive by varying the surface roughness of the nanowires and their length. In devices containing short crystalline wires, phonon tunneling occurs and enhances the conductance beyond that of single contacts.
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85.30.De Semiconductor-device characterization, design, and modeling

Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation

Monika Fritzsche, Arndt Muecklich, and Stefan Facsko

Appl. Phys. Lett. 100, 223108 (2012); http://dx.doi.org/10.1063/1.4721662 (4 pages) | Cited 3 times

Online Publication Date: 30 May 2012

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Hexagonally ordered nanohole patterns were produced on Ge(100) surfaces by focused Ga+ ion beam and broad Ga+ ion beam irradiations with 5 keV energy under normal incidence. Identical patterns were obtained by irradiations with a scanning focused ion beam under different irradiation conditions and with a broad Ga+ beam without scanning and five orders of magnitude smaller ion flux. Thus, we could demonstrate that nanohole pattern formation is independent of ion flux over several orders of magnitude and scanning of a focused ion beam under appropriate conditions is identical to broad ion beam irradiation.
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61.80.Jh Ion radiation effects

Synthesis of the superlattice complex oxide Sr5Bi4Ti8O27 and its band gap behavior

M. A. Zurbuchen, N. J. Podraza, J. Schubert, Y. Jia, and D. G. Schlom

Appl. Phys. Lett. 100, 223109 (2012); http://dx.doi.org/10.1063/1.4722942 (4 pages)

Online Publication Date: 31 May 2012

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The n = 8 member of the Aurivillius complex oxide superlattice series of phases, Sr5Bi4Ti8O27, was synthesized by pulsed-laser deposition on (001) SrTiO3 single-crystal substrates. This phase, with a c-axis lattice parameter of 7.25 ± 0.036 nm, and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The film is observed to be single phase and free of intergrowths of other-n members of the series. Using spectroscopic ellipsometry, Sr5Bi4Ti8O27 was determined to exhibit an indirect band gap of 3.53 eV at room temperature.
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68.65.Cd Superlattices
81.15.Fg Pulsed laser ablation deposition
68.55.at Other materials
71.20.Ps Other inorganic compounds
73.21.Cd Superlattices

Emission from a dipole-forbidden energy state in a ZnO quantum dot induced by a near-field interaction with a fiber probe

T. Yatsui, M. Tsuji, Y. Liu, T. Kawazoe, and M. Ohtsu

Appl. Phys. Lett. 100, 223110 (2012); http://dx.doi.org/10.1063/1.4723574 (4 pages)

Online Publication Date: 31 May 2012

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The emission intensity from the dipole-forbidden state in a spherical quantum dot (QD) was enhanced by introducing an aperture fiber probe close to the ZnO QD to induce a near-field interaction between the probe tip and the QD. The cross-sectional profiles of the photoluminescence intensities of the ground exciton state and the excited exciton states varied spatially in an anti-correlated manner.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.21.La Quantum dots
71.35.Gg Exciton-mediated interactions

Effect of first row transition metals on the conductivity of semiconducting single-walled carbon nanotube networks

Feihu Wang, Mikhail E. Itkis, Elena B. Bekyarova, Xiaojuan Tian, Santanu Sarkar, Aron Pekker, Irina Kalinina, Matthew L. Moser, and Robert C. Haddon

Appl. Phys. Lett. 100, 223111 (2012); http://dx.doi.org/10.1063/1.4723717 (4 pages) | Cited 3 times

Online Publication Date: 1 June 2012

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We demonstrate the ability of first row transition metals to form electrically conducting interconnects between semiconducting single-walled carbon nanotubes (SWNTs) by constructive rehybridization between sidewall benzene rings as a result of the formation of bis-hexahapto-metal-bonds [(η6-SWNT)M(η6-SWNT)], which bridge adjacent SWNTs. Metal deposition on SWNT films enhances the conductivity by three distinct mechanisms: physisorption of gold leads to the formation of a non-interacting gold film and a monotonic conductivity increase; ionic chemisorption of lithium strongly increases the conductivity due to charge transfer to the SWNTs; covalent chemisorption of first row transition metals leads to an abrupt change in conductivity due to formation of (η6-SWNT)M(η6-SWNT) interconnects.
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73.40.Ns Metal-nonmetal contacts
72.80.Cw Elemental semiconductors
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Microwave-induced nonequilibrium temperature in a suspended carbon nanotube

H. L. Hortensius, A. Öztürk, P. Zeng, E. F. C. Driessen, and T. M. Klapwijk

Appl. Phys. Lett. 100, 223112 (2012); http://dx.doi.org/10.1063/1.4723873 (4 pages) | Cited 1 time

Online Publication Date: 1 June 2012

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Antenna-coupled suspended single carbon nanotubes exposed to 108 GHz microwave radiation are shown to be selectively heated with respect to their metal contacts. This leads to an increase in the conductance as well as to the development of a power-dependent DC voltage. The increased conductance stems from the temperature dependence of tunneling into a one-dimensional electron system. The DC voltage is interpreted as a thermovoltage, due to the increased temperature of the electron liquid compared to the equilibrium temperature in the leads.
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85.35.Kt Nanotube devices
61.82.Fk Semiconductors
84.40.Ba Antennas: theory, components and accessories

Ion induced spinodal dewetting of thin solid films

Luca Repetto, Barbara Šetina Batič, Giuseppe Firpo, Emanuele Piano, and Ugo Valbusa

Appl. Phys. Lett. 100, 223113 (2012); http://dx.doi.org/10.1063/1.4724178 (4 pages) | Cited 2 times

Online Publication Date: 1 June 2012

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We present experimental data and numerical simulations in order to show that the mechanism of spinodal dewetting is active during ion beam irradiation of thin solid films. The expected scaling law for the characteristic wavelengths versus the initial film thickness is modified by the presence of sputtering. The conclusion is fully supported by model simulation which shows a square law dependence for null sputtering yield and a bimodal trend when sputtering is included. This result is in contrast to earlier studies and opens the possibility to control and use ion induced dewetting for the fabrication of functional nanostructures.
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68.08.Bc Wetting
61.80.Jh Ion radiation effects
81.15.Cd Deposition by sputtering
68.55.aj Insulators
61.82.Bg Metals and alloys

Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector

Xue-Wen Fu, Zhi-Min Liao, Yang-Bo Zhou, Han-Chun Wu, Ya-Qing Bie, Jun Xu, and Da-Peng Yu

Appl. Phys. Lett. 100, 223114 (2012); http://dx.doi.org/10.1063/1.4724208 (4 pages) | Cited 7 times

Online Publication Date: 1 June 2012

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We report the high performance vertical ultraviolet (UV) photodetectors based on single ZnO nanowire (NW) sandwiched between two graphene sheets. The photocurrent on-off ratio, rising time, and recovery speed of our UV detectors are 8 × 102, 0.7 s, and 0.5 s, respectively, which are significantly improved compared to the conventional ZnO NWs photodetectors. The improved performance is attributed to the existence of Schottky barriers between ZnO NW and graphene electrodes. The graphene/ZnO NW/graphene vertical sandwiched structures may be promising candidates for integrated optoelectronic sensor devices.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction of GaN light emitting diode applications

Sung Jin An

Appl. Phys. Lett. 100, 223115 (2012); http://dx.doi.org/10.1063/1.4724326 (5 pages) | Cited 2 times

Online Publication Date: 1 June 2012

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We demonstrated transparent vertical aligned ZnO nanorod arrays for nanoelectrodes as a reverse-tunnel junction of GaN LEDs. GaN LEDs with ZnO nanorod arrays for nanoelectrodes demonstrated three times enhanced light output power compared with that of GaN LEDs with tunnel junction ZnO thin film, resulting from increased light extraction efficiency. Tunnel junction ZnO nanorod arrays for nanoelectrodes offer both high transparent current spreading layer for uniform current injection and easy method for high extraction efficiency.
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78.67.Qa Nanorods
73.61.Ga II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.45.Fk Electrodes
85.60.Jb Light-emitting devices
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
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