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28 May 2012

Volume 100, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 100, 222402 (2012); http://dx.doi.org/10.1063/1.3700809 (4 pages)

Felix Balhorn, Simon Jeni, Wolfgang Hansen, Detlef Heitmann, and Stefan Mendach
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Lutetium-doped EuO films grown by molecular-beam epitaxy

A. Melville, T. Mairoser, A. Schmehl, D. E. Shai, E. J. Monkman, J. W. Harter, T. Heeg, B. Holländer, J. Schubert, K. M. Shen, J. Mannhart, and D. G. Schlom

Appl. Phys. Lett. 100, 222101 (2012); http://dx.doi.org/10.1063/1.4723570 (4 pages) | Cited 3 times

Online Publication Date: 29 May 2012

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The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.at Other materials
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
78.20.Ls Magneto-optical effects
78.66.Nk Insulators

Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, and K. M. Itoh

Appl. Phys. Lett. 100, 222102 (2012); http://dx.doi.org/10.1063/1.4723690 (4 pages) | Cited 1 time

Online Publication Date: 30 May 2012

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High two-dimensional hole gas (2DHG) mobility (μ2DHG>10000cm2/Vs at T<100K) strained Ge/Si1−xGex structures with x = 0.5 and 0.65 were fabricated, and temperature dependence of their 2DHG mobility was obtained experimentally by the mobility spectrum analysis of the conductivity under magnetic fields. The theoretically calculated 2DHG mobility was compared to experimental data to determine the effective deformation potentials for scattering by acoustic and optical phonons. Using empirically confirmed parameters, the upper theoretical limit of room temperature 2DHG mobility μ2DHG in strained Ge as a function of strain was calculated. The possibility to achieve μ2DHG>5000cm2/Vs at room temperature is presented.
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81.05.Cy Elemental semiconductors
81.05.Hd Other semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations

On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation

Rupak Bhattacharya, Bipul Pal, and Bhavtosh Bansal

Appl. Phys. Lett. 100, 222103 (2012); http://dx.doi.org/10.1063/1.4721495 (3 pages)

Online Publication Date: 30 May 2012

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The problem of conversion of experimentally measured luminescence spectrum into the absorption cross section is revisited. The common practice of using the van Roosbroeck-Shockley (or Kubo-Martin-Schwinger or Kennard-Stepanov) relation in this context is incorrect because luminescence from semiconductors is essentially all due to the spontaneous emission component of the recombination of carriers distributed far-from-equilibrium. A simple, physically consistent, and practical prescription for converting the luminescence spectra into absorption is presented and its relation to the so-called nonequilibrium generalization of the van Roosbroeck-Shockley relationship is discussed.
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78.55.Cr III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy

J. S. Hwang, J. T. Tsai, I. C. Su, H. C. Lin, Y. T. Lu, P. C. Chiu, and J. I. Chyi

Appl. Phys. Lett. 100, 222104 (2012); http://dx.doi.org/10.1063/1.4724097 (4 pages) | Cited 1 time

Online Publication Date: 30 May 2012

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The bandgap, surface Fermi level, and surface state density of a series of GaAs1−xSbx surface intrinsic-n+ structures with GaAs as substrate are determined for various Sb mole fractions x by the photoreflectance modulation spectroscopy. The dependence of the bandgap on the mole composition x is in good agreement with previous measurements as well as predictions calculated using the dielectric model of Van Vechten and Bergstresser in Phys. Rev. B 1, 3551 (1970). For a particular composition x, the surface Fermi level is always strongly pinned within the bandgap of GaAs1−xSbx and we find its variation with composition x is well described by a function EF = 0.70 − 0.192 x for 0 ≦ x ≦ 0.35, a result which is notably different from that reported by Chouaib et al. [Appl. Phys. Lett. 93, 041913 (2008)]. Our results suggest that the surface Fermi level is pinned at the midgap of GaAs and near the valence band of the GaSb.
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71.20.Nr Semiconductor compounds
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.20.At Surface states, band structure, electron density of states
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